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Journal of Applied Physics / Volume 99 / Issue 7 / ELECTRONIC STRUCTURE AND TRANSPORT

J. Appl. Phys. 99, 073709 (2006); http://dx.doi.org/10.1063/1.2188030 (7 pages)

Optical and electron paramagnetic resonance spectroscopies of diffusion-doped Co2+:ZnSe

Ming Luo1, N. Y. Garces1, N. C. Giles1, Utpal N. Roy2, Yunlong Cui2, and Arnold Burger2

1Physics Department, West Virginia University, Morgantown, West Virginia 26506-6315
2Physics Department, Fisk University, Nashville, Tennessee 37208-3051

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(Received 29 June 2005; accepted 13 February 2006; published online 12 April 2006)

The efficacy of diffusing cobalt into window-grade polycrystalline ZnSe during high-temperature anneals has been studied. Absorption, photoluminescence (PL), time-resolved PL, and electron paramagnetic resonance (EPR) were used to characterize samples with cobalt concentrations ranging from 1017 to 1019 cm−3. Absorption and PL were used to monitor the optical properties of Co2+ impurities, as well as detect Ni2+ and Fe2+ ions due to unintentional contamination. The temperature dependence of the 3 μm emission due to Co2+ ions was measured and lifetimes were determined. EPR was used to monitor the paramagnetic charge states (Co2+, Ni3+, and Fe3+) of the transition-metal ions in our samples. The effects of nickel and iron impurities on the Co2+ infrared emission intensity and lifetime are discussed.

© 2006 American Institute of Physics

Article Outline

  1. INTRODUCTION
  2. EXPERIMENTAL DETAILS
  3. RESULTS AND DISCUSSION
    1. Visible and infrared optical absorption
    2. Infrared luminescence using blue-light excitation
    3. Infrared Co2+ emission using 755 nm excitation
    4. TRPL measurements using 755 nm excitation
    5. EPR of TM ions ( Co2+ , Ni3+ , and Fe3+ )
  4. SUMMARY

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KEYWORDS and PACS

Keywords

zinc compounds, II-VI semiconductors, cobalt, nickel, iron, paramagnetic resonance, diffusion, annealing, photoluminescence, impurity absorption spectra, infrared spectra

PACS

  • 76.30.Fc

    Iron group (3d) ions and impurities (Ti-Cu)

  • 78.30.Fs

    III-V and II-VI semiconductors

  • 78.55.Et

    II-VI semiconductors

  • 66.30.J-

    Diffusion of impurities

  • 61.72.Cc

    Kinetics of defect formation and annealing

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.2188030

PUBLICATION DATA

ISSN

0021-8979 (print)  
1089-7550 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

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