One-dimensional postwetting layer in InGaAs/GaAs(100) quantum-dot chains

Wang, Zh. M.; Mazur, Yu. I.; Shultz, J. L.; Salamo, G. J.; Mishima, T. D.; Johnson, M. B.

doi:doi:10.1063/1.2169868

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Long chains of quantum dots formed in InGaAs/GaAs(100) multiple layers have been systematically investigated by scanning electron, transmission electron, and atomic force microscopies. In addition to the usual two-dimensional wetting layer involved in the Stranski-Krastanov growth, we have directly observed a one-dimensional postwetting layer along the [01−1] direction that strings together the quantum dots in each chain. In sharp contrast with the two-dimensional wetting layer, which exists before the quantum-dot chains form, this one-dimensional postwetting layer develops during the GaAs capping of the existing dot chains. This one-dimensional layer forms through the anisotropic surface diffusion of In atoms that accompanies the change in strain profile during capping and therefore produces the steady-state material distribution that includes a one-dimensional postwetting layer as a result.

Article Outline

INTRODUCTION
EXPERIMENT
RESULTS AND DISCUSSION
CONCLUSION

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KEYWORDS and PACS

Keywords

wetting, indium compounds, gallium arsenide, III-V semiconductors, semiconductor quantum dots, scanning electron microscopy, transmission electron microscopy, atomic force microscopy, surface diffusion, interface structure

PACS

68.08.Bc

Wetting
68.65.Hb

Quantum dots (patterned in quantum wells)
68.35.Ct

Interface structure and roughness
68.37.Hk

Scanning electron microscopy (SEM) (including EBIC)
68.37.Lp

Transmission electron microscopy (TEM)
68.37.Ps

Atomic force microscopy (AFM)

ARTICLE DATA

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http://dx.doi.org/10.1063/1.2169868

PUBLICATION DATA

ISSN

0021-8979 (print)

1089-7550 (online)

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American Institute of Physics

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