Fabrication of induced two-dimensional hole systems on (311)A GaAs

Clarke, W. R.; Micolich, A. P.; Hamilton, A. R.; Simmons, M. Y.; Muraki, K.; Hirayama, Y.

doi:doi:10.1063/1.2163998

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We demonstrate a method for fabricating induced two-dimensional hole devices in (311)A GaAs. The method uses a metallic p⁺‐GaAs capping layer as an in situ top gate that pins the Fermi energy close to the valence band, thereby allowing very small gate biases to be used to induce a two-dimensional hole system at a AlGaAs/GaAs interface. We present transport data from devices with different levels of background impurities. Modeling the mobility as a function of hole density gives a quantitative measure of the level of disorder and indicates that these systems can be used for a systematic study of the effects of disorder in strongly interacting low-dimensional systems.

Article Outline

INTRODUCTION
PREVIOUS SISFET DEVICES
1. n -type SISFET devices
2. p -type SISFET devices
A HYBRID HETEROSTRUCTURE FOR INDUCING 2DHS
DEVICE FABRICATION AND TRANSPORT MEASUREMENTS
DISORDER AND SCATTERING IN INDUCED 2DHS
CONCLUSIONS

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KEYWORDS and PACS

Keywords

two-dimensional hole gas, gallium arsenide, III-V semiconductors, Fermi level, valence bands, aluminium compounds, impurity states, hole density

PACS

73.21.-b

Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
73.63.-b

Electronic transport in nanoscale materials and structures
73.61.Ey

III-V semiconductors
73.20.At

Surface states, band structure, electron density of states
71.55.Eq

III-V semiconductors

ARTICLE DATA

Digital Object Identifier

http://dx.doi.org/10.1063/1.2163998

PUBLICATION DATA

ISSN

0021-8979 (print)

1089-7550 (online)

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American Institute of Physics

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