Analysis of leakage current mechanisms in Schottky contacts to GaN and Al0.25Ga0.75N/GaN grown by molecular-beam epitaxy

Zhang, H.; Miller, E. J.; Yu, E. T.

doi:doi:10.1063/1.2159547

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Deep traps in oxide-nitride-oxide stacks fabricated from hydrogen and deuterium containing precursors

The energy spectrum of the traps and thermal stability of stored charge have been studied by the thermostimulated exoelectron emission method in hydrogenated H and deuterated D oxide-nitride-oxide (ONO) multilayer stacks of silicon-oxide-nitride-oxide-silicon (SONOS) nonvolatile memories. It is shown that the trap energies are identical for both types of ONO. The deep traps responsible for charge storage have an activation energy 1.7–1.8 eV and are attributed to complexes containing excess sili...

Energy band shape of monolayer metal/organic/metal structures as determined by the capacitance-voltage method

The room-temperature differential capacitance of monolayer metal/organic-semiconductor/metal structures was derived. The derivation was based on two basic assumptions: (a) the rectifying metal/organic-semiconductor junction is characterized by the bias-dependent net excess charge density, induced at the interface, and (b) the charge flow within the organic layer is represented by the space-charge-limited current. The predictions of the derivations were compared to C-U data on an ionized cluster...

Temperature-dependent current-voltage measurements combined with conductive atomic force microscopy and analytical modeling have been used to assess possible mechanisms of reverse-bias leakage current flow in Schottky diodes fabricated from GaN and Al_0.25Ga_0.75N/GaN structures grown by molecular-beam epitaxy. Below 150 K, leakage current is nearly independent of temperature, indicating that conduction is dominated by tunneling transport. At higher temperatures, leakage current in both GaN and Al_0.25Ga_0.75N/GaN diode structures is well described by a Frenkel-Poole emission model. Based on the inferred emission barrier heights and the observation that room-temperature leakage current is dominated by the presence of highly conductive dislocations, it is suggested that the key carrier transport process is emission of electrons from a trap state near the metal-semiconductor interface into a continuum of states associated with each conductive dislocation. In this model for leakage current flow, the emission barrier heights measured for the GaN and Al_0.25Ga_0.75N/GaN diode structures indicate that the conductive dislocation states are aligned in energy between GaN and Al_0.25Ga_0.75N.

Article Outline

INTRODUCTION
EXPERIMENT
RESULTS AND DISCUSSION
CONCLUSIONS

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KEYWORDS and PACS

Keywords

gallium compounds, III-V semiconductors, wide band gap semiconductors, aluminium compounds, leakage currents, Schottky diodes, molecular beam epitaxial growth, atomic force microscopy, semiconductor growth, tunnelling, Poole-Frenkel effect, dislocations, electron traps, Schottky barriers

PACS

85.30.Hi

Surface barrier, boundary, and point contact devices
85.30.Kk

Junction diodes
81.15.Hi

Molecular, atomic, ion, and chemical beam epitaxy
68.37.Ps

Atomic force microscopy (AFM)
73.50.Fq

High-field and nonlinear effects
73.50.Gr

Charge carriers: generation, recombination, lifetime, trapping, mean free paths

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http://link.aip.org/link/doi/10.1063/1.2159547

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0021-8979 (print)

1089-7550 (online)

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American Institute of Physics

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