jap banner
  • Volume/Page
  • Keyword
  • DOI
  • Citation
  • Advanced
   
 
 
 

Flickr Twitter UniPHY Group iResearch App Facebook

Journal of Applied Physics / Volume 99 / Issue 12 / INTERDISCIPLINARY AND GENERAL PHYSICS

J. Appl. Phys. 99, 124906 (2006); http://dx.doi.org/10.1063/1.2204827 (4 pages)

Optical and electrical transport properties of facing-target sputtered Al doped ZnO transparent film

Z. Q. Li1, D. X. Zhang2, and J. J. Lin3

1Institute of Advanced Materials Physics, Faculty of Science, Tianjin University, Tianjin 300072, People’s Republic of China
2College of Information Technical Science, Nankai University, Tianjin 300071, People’s Republic of China
3Institute of Physics, National Chiao Tung University, Hsinchu 30010, Taiwan and Department of Electrophysics, National Chiao Tung University, Hsinchu 30010, Taiwan

View MapView Map

(Received 29 December 2005; accepted 15 April 2006; published online 22 June 2006)

Al doped zinc oxide thin film was prepared by dc facing-target sputtering method and its structural, optical, and electrical transport properties have been investigated. The average transmittance of the films is greater than 90% in the wavelength region of 450–700 nm while the resistivity is as high as 3×10−3 Ω cm. The band gap energy derived from the transmission data is 3.76 eV, which is higher than that of pure ZnO thin film. This band gap growth phenomenon cannot be explained in terms of the Burstein-Moss effect. The resistivity and Hall effect measurements suggest that the interaction between the charge carriers and phonons plays a key role in the electrical transport properties of the film between 60 and 300 K. The film exhibits negative magnetoresistance at low temperatures, which can be well described by a semiempirical expression that takes into account the third order s-d exchange Hamiltonians describing a negative part and a two-band model for positive contribution.

© 2006 American Institute of Physics

Article Outline

  1. INTRODUCTION
  2. EXPERIMENT
  3. RESULTS AND DISCUSSION
  4. SUMMARY

RELATED DATABASES

To view database links for this article, you need to log in.

KEYWORDS and PACS

Keywords

zinc compounds, II-VI semiconductors, aluminium, wide band gap semiconductors, semiconductor thin films, sputter deposition, visible spectra, energy gap, Hall effect, phonons, magnetoresistance

PACS

  • 81.05.Dz

    II-VI semiconductors

  • 78.66.Hf

    II-VI semiconductors

  • 73.61.Ga

    II-VI semiconductors

  • 68.55.-a

    Thin film structure and morphology

  • 81.15.Cd

    Deposition by sputtering

  • 63.22.-m

    Phonons or vibrational states in low-dimensional structures and nanoscale materials

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.2204827

PUBLICATION DATA

ISSN

0021-8979 (print)  
1089-7550 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

For access to fully linked references, you need to log in.
    Ü. Özgür et al., J. Appl. Phys. 98, 041301 (2005)JAPIAU000098000004041301000001.

    K. H. Kim, K. C. Park, and D. Y. Ma, J. Appl. Phys. 81, 7764 (1997)JAPIAU000081000012007764000001.

    Z. Q. Li and J. J. Lin, J. Appl. Phys. 96, 5918 (2004)JAPIAU000096000010005918000001.

    M. Gabás, S. Gota, J. R. Ramos-Barrado, M. Sánchez, N. T. Barrett, J. Avila, and M. Sacchi, Appl. Phys. Lett. 86, 042104 (2005)APPLAB000086000004042104000001.

    C. Y. Wu and J. J. Lin, Phys. Rev. B 50, 385 (1994).


For access to citing articles, you need to log in.


Figures (5) Tables (1)

Access to article objects (figures, tables, multimedia) requires a subscription; log in to view available files.
(Access to supplementary files, where available, is free for this journal.)

Access to article objects (figures, tables, multimedia) requires a subscription; log in to view available files.
(Access to supplementary files, where available, is free for this journal.)



Close

Google Calendar

ADVERTISEMENT

Your Recent History Recent History Help

Recently Viewed

  1. Optical and electrical transport properties of facing-target sputtered Al doped ZnO transparent film
  2. A photoemission model for low work function coated metal surfaces and its experimental validation
  3. Valence-band electron-tunneling measurement of the gate work function: Application to the high-κ/polycrystalline-silicon interface
  4. Strong optical nonlinearity in strain-induced laterally ordered In0.4Ga0.6As quantum wires on GaAs (311)A substrate
  5. Improvement of the atmospheric discharge laser-triggered ability using multiple pulses from a kilohertz KrF laser
Go to AIP Home
Copyright © American Institute of Physics
close