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1 Jun 2006

Volume 99, Issue 11, Articles (11xxxx)

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Front-to-end simulations of the design of a laser wakefield accelerator with external injection

W. H. Urbanus, W. van Dijk, S. B. van der Geer, G. J. H. Brussaard, and M. J. van der Wiel

J. Appl. Phys. 99, 114501 (2006); http://dx.doi.org/10.1063/1.2195382 (8 pages) | Cited 7 times

Online Publication Date: 1 June 2006

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We report the design of a laser wakefield accelerator (LWA) with external injection by a rf photogun and acceleration by a linear wakefield in a capillary discharge channel. The design process is complex due to the large number of intricately coupled free parameters. To alleviate this problem, we performed front-to-end simulations of the complete system. The tool we used was the general particle-tracking code, extended with a module representing the linear wakefield by a two-dimensional traveling wave with appropriate wavelength and amplitude. Given the limitations of existing technology for the longest discharge plasma wavelength ( ∼ 50 μm) and shortest electron bunch length ( ∼ 100 μm), we studied the regime in which the wakefield acts as slicer and buncher, while rejecting a large fraction of the injected bunch. The optimized parameters for the injected bunch are 10 pC, 300 fs at 6.7 MeV, to be injected into a 70 mm long channel at a plasma density of 7×1023 m−3. A linear wakefield is generated by a 2 TW laser focused to 30 μm. The simulations predict an accelerated output of 0.6 pC, 10 fs bunches at 90 MeV, with energy spread below 10%. The design is currently being implemented. The design process also led to an important conclusion: output specifications directly comparable to those reported recently from “laser-into-gas jet” experiments are feasible, provided the performance of the rf photogun is considerably enhanced. The paper outlines a photogun design providing such a performance level.
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29.20.-c Accelerators
29.27.Ac Beam injection and extraction
29.27.Eg Beam handling; beam transport
52.38.Kd Laser-plasma acceleration of electrons and ions
52.38.Ph X-ray, γ-ray, and particle generation
52.65.Cc Particle orbit and trajectory

Influence of carrier injection on the electromodulation response of trap-rich polymer light-emitting diodes

P. J. Brewer, A. J. deMello, J. C. deMello, P. A. Lane, D. D. C. Bradley, R. Fletcher, and J. O’Brien

J. Appl. Phys. 99, 114502 (2006); http://dx.doi.org/10.1063/1.2201692 (5 pages) | Cited 11 times

Online Publication Date: 1 June 2006

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We investigate the influence of carrier injection on the electric field distribution in polyfluorene-based polymer light-emitting diodes containing poly(3,4-ethylenedioxythiophene)-poly(styrene sulfonate) (PEDOT:PSS). The devices show strong charge-induced electromodulation spectra due to the accumulation of trapped electrons close to the PEDOT:PSS/polyfluorene interface. The trapped electrons cause the potential to drop preferentially at the interface, enhancing hole injection and substantially reducing the magnitude of the electric field in the bulk semiconductor. The detailed operating mechanisms of such “trap-rich” devices are poorly understood, and in this paper we perform a series of temperature-dependent current-voltage sweeps and electromodulation measurements to clarify the role of the injected charge. We find that the devices show strong field redistribution only at room temperature and that devices operating at lower temperatures (<100 K) resemble trap-free light-emitting diodes with a uniform electric field that extends through the bulk. We consider also the effects of pixel aging and show that field redistribution effects are reduced after extended device operation.
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85.60.Jb Light-emitting devices

Donor/acceptor type photodetectors: Role of substitution in acceptor material

Satyajit Sahu and Amlan J. Pal

J. Appl. Phys. 99, 114503 (2006); http://dx.doi.org/10.1063/1.2199348 (4 pages) | Cited 2 times

Online Publication Date: 2 June 2006

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We report fabrication and characterization of photodetectors based on organic semiconductors. Single and multiple heterostructures between electron donor and acceptor materials are used. Moreover, by varying the substitutes of the acceptor molecule, five different donor/acceptor combinations are presented. Photocurrent depends on the choice of the acceptor material, showing importance of energy mismatch between lowest unoccupied molecular orbital (and highest occupied molecular orbital) levels of donor and acceptor molecules. Additionally, the photocurrent also depends on the number of donor/acceptor interfaces. The results can be explained in terms of an energy band diagram of the devices. From the impedance spectroscopy, we show that the change in dielectric constant of the active material due to illumination has a direct relevance to the external current of the photodetectors. © 2006 American Institute of Physics.
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85.60.Gz Photodetectors (including infrared and CCD detectors)
85.40.Ry Impurity doping, diffusion and ion implantation technology

Sensitive detector for a passive terahertz imager

P. Kleinschmidt, S. Giblin, A. Tzalenchuk, H. Hashiba, V. Antonov, and S. Komiyama

J. Appl. Phys. 99, 114504 (2006); http://dx.doi.org/10.1063/1.2199107 (5 pages) | Cited 8 times

Online Publication Date: 2 June 2006

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We report progress in developing a sensitive detector for terahertz radiation, based on a semiconductor quantum dot (QD) capacitively coupled to a metallic single electron transistor (SET). A charge polarization of the QD induced by the absorption of individual photons is detected by the voltage-biased SET. We investigate the sensitivity of the detector to broadband radiation, over a range of QD barrier heights, and find that there is a measurable photo-signal over wide range of gate voltages defining the QD. This is an improvement on previous designs of terahertz detector based on the QD/SET principle, and makes the new detector a candidate for use in an imaging device.
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07.57.Kp Bolometers; infrared, submillimeter wave, microwave, and radiowave receivers and detectors
85.60.Gz Photodetectors (including infrared and CCD detectors)
85.35.Gv Single electron devices

Aspects of the internal physics of InGaAs/InAlAs quantum cascade lasers

James Mc Tavish, Dragan Indjin, and Paul Harrison

J. Appl. Phys. 99, 114505 (2006); http://dx.doi.org/10.1063/1.2201252 (6 pages) | Cited 8 times

Online Publication Date: 5 June 2006

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We report on the results of our simulations of an InGaAs/InAlAs midinfrared quantum cascade laser (QCL) designed to operate in continuous wave mode at room temperature [ Beck et al., Science 295, 301 (2002) ]. Our physical model of the device consists of a self-consistent solution of the subband population rate equations and accounts for all electron-longitudinal-optical phonon and electron-electron scattering rates, as well as an evaluation of the temperature of the nonequilibrium electron distribution. We also consider the role of the doping density and its influence on the electron dynamics. We found that the temperature of the nonequilibrium electron distribution differed significantly from the lattice temperature and that this temperature increased with applied electric field and current density, with coupling constants somewhat larger than analogous GaAs based midinfrared QCLs. Our simulations also reveal physical processes of the device that are not apparent from the experimental measurements, such as the role of electron-electron scattering.
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42.55.Px Semiconductor lasers; laser diodes
42.60.By Design of specific laser systems
85.30.De Semiconductor-device characterization, design, and modeling
61.72.uj III-V and II-VI semiconductors
61.72.S- Impurities in crystals

A room-temperature continuous-wave operating midinfrared light emitting device

Fritz Weik, Günter Steinmeyer, Jens W. Tomm, Regine Glatthaar, Uwe Vetter, Joachim Nurnus, and Armin Lambrecht

J. Appl. Phys. 99, 114506 (2006); http://dx.doi.org/10.1063/1.2200875 (4 pages) | Cited 4 times

Online Publication Date: 5 June 2006

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An optimized light source for the 4–5 μm wavelength region with a continuous-wave output power of 2 mW at ambient temperature is introduced. The device is based on a narrow-gap lead salt semiconductor chip, which is optically pumped by a standard high-power diode laser array. Surface patterning is employed and leads to an up to sixfold increase in out-coupling efficiency compared to untreated chip surfaces. A model is presented that explains this enhancement of the light extraction. Output efficiencies of 4×10−4 are achieved.
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42.72.Ai Infrared sources
85.60.Jb Light-emitting devices

Thermically tuned nematic guide

Adalberto Corella-Madueño and Juan Adrián Reyes

J. Appl. Phys. 99, 114507 (2006); http://dx.doi.org/10.1063/1.2200716 (4 pages) | Cited 1 time

Online Publication Date: 5 June 2006

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We consider a cylindrical fiber with a liquid crystal core satisfying homeotropic weak anchoring boundary conditions. We find the different textures of the nematic inside the cylinder obtained by changing the temperature. We calculate exactly the spatial distribution of the transverse magnetic modes in the guide as a function of temperature of the system by using a numerical scheme.
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42.70.Df Liquid crystals
42.81.Dp Propagation, scattering, and losses; solitons

Planar spin valves fabricated on manganite epitaxial thin films

I. Pallecchi, E. Bellingeri, G. Canu, A. Caviglia, A. S. Siri, and D. Marré

J. Appl. Phys. 99, 114508 (2006); http://dx.doi.org/10.1063/1.2200590 (4 pages) | Cited 5 times

Online Publication Date: 5 June 2006

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We fabricate micrometric constrictions in manganite epitaxial thin films by atomic force microscope local anodization. We demonstrate the possibility of realizing planar spin valve devices, exhibiting hysteretic transport behavior as a function of the external magnetic field, associated with magnetic domains orientation. We also observe nonlinear current-voltage characteristics which become increasingly linear in external field and we attribute this crossover to the disappearance of energy barriers of domain walls at the constriction.
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75.70.Ak Magnetic properties of monolayers and thin films
75.70.Kw Domain structure (including magnetic bubbles and vortices)
75.60.Ej Magnetization curves, hysteresis, Barkhausen and related effects
75.60.Ch Domain walls and domain structure

Influence of residual oxygen impurity in quaternary InAlGaN multiple-quantum-well active layers on emission efficiency of ultraviolet light-emitting diodes on GaN substrates

Takashi Kyono, Hideki Hirayama, Katsushi Akita, Takao Nakamura, Masahiro Adachi, and Koshi Ando

J. Appl. Phys. 99, 114509 (2006); http://dx.doi.org/10.1063/1.2200749 (7 pages) | Cited 6 times

Online Publication Date: 6 June 2006

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The influence of residual impurities in quaternary InAlGaN active layers on the emission efficiency of 350 nm band ultraviolet light-emitting diodes on GaN substrates has been investigated. Secondary ion mass spectrometry and capacitance-voltage measurements have revealed that a large amount of oxygen is incorporated into the InAlGaN active layers owing to relatively low growth temperatures for Al-content epitaxial films. The increase of the InAlGaN growth temperature from 780 to 830 °C results in both the residual oxygen level decrease from 1×1018 to 4×1017 cm−3 and the output power improvement from 0.6 to 2.6 mW at 100 mA. It is also found that devices containing lower oxygen concentration in the InAlGaN active layers demonstrate a higher electroluminescence intensity ratio of the band-edge emission from the well layers to the donor-acceptor-pair emission from the p-type layers at low temperatures. These experimental results, in conjunction with numerical calculations, suggest that the reduction in the oxygen impurity level in the InAlGaN active layers has an effect on suppressing the electron leakage current into the p-type layers, and thus improving the internal quantum efficiency of InAlGaN-based ultraviolet light-emitting diodes.
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85.60.Jb Light-emitting devices
85.35.Be Quantum well devices (quantum dots, quantum wires, etc.)
61.72.S- Impurities in crystals
78.60.Fi Electroluminescence
78.67.De Quantum wells
71.55.Eq III-V semiconductors

High temperature Hall effect sensors based on AlGaN/GaN heterojunctions

Hai Lu, Peter Sandvik, Alexei Vertiatchikh, Jesse Tucker, and Ahmed Elasser

J. Appl. Phys. 99, 114510 (2006); http://dx.doi.org/10.1063/1.2201339 (4 pages) | Cited 8 times

Online Publication Date: 6 June 2006

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We report on AlGaN/GaN heterojunction structures for use in Hall effect sensors working over a wide range of temperatures. Room temperature current-related magnetic sensitivity of 55 V/AT at a sheet resistance below 300 Ω/sq and very low temperature cross sensitivity of 103 ppm/°C up to 300 °C were obtained for a square-shaped Hall effect sensor. The active layer of the Hall effect sensor is the two-dimensional electron gas formed at the Al0.3Ga0.7N and GaN heterointerface caused by the gradient in the total polarization between the AlGaN barrier and the GaN buffer layer, which results in the positive polarization induced interface charge attracting free electrons. The temperature-dependent transport properties of the heterojunction were analyzed by Hall measurement. The drop of its electron mobility from room temperature to 300 °C is mainly due to the enhanced polar optical scattering, while the very stable sheet carrier density contributes to the excellent temperature cross sensitivity of the Hall effect sensor.
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85.30.Fg Bulk semiconductor and conductivity oscillation devices (including Hall effect devices, space-charge-limited devices, and Gunn effect devices)
07.07.Df Sensors (chemical, optical, electrical, movement, gas, etc.); remote sensing
73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions

Epitaxial pentacene films grown on the surface of ion-beam-processed gate dielectric layer

W. Y. Chou, C. W. Kuo, H. L. Cheng, Y. S. Mai, F. C. Tang, S. T. Lin, C. Y. Yeh, J. B. Horng, C. T. Chia, C. C. Liao, and D. Y. Shu

J. Appl. Phys. 99, 114511 (2006); http://dx.doi.org/10.1063/1.2201839 (7 pages) | Cited 6 times

Online Publication Date: 7 June 2006

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The following research describes the process of fabrication of pentacene films with submicron thickness, deposited by thermal evaporation in high vacuum. The films were fabricated with the aforementioned conditions and their characteristics were analyzed using x-ray diffraction, scanning electron microscopy, polarized Raman spectroscopy, and photoluminescence. Organic thin-film transistors (OTFTs) were fabricated on an indium tin oxide coated glass substrate, using an active layer of ordered pentacene molecules, which were grown at room temperature. Pentacene film was aligned using the ion-beam aligned method, which is typically employed to align liquid crystals. Electrical measurements taken on a thin-film transistor indicated an increase in the saturation current by a factor of 15. Pentacene-based OTFTs with argon ion-beam-processed gate dielectric layers of silicon dioxide, in which the direction of the ion beam was perpendicular to the current flow, exhibited a mobility that was up to an order of magnitude greater than that of the controlled device without ion-beam process; current on/off ratios of approximately 106 were obtained. Polarized Raman spectroscopy investigation indicated that the surface of the gate dielectric layer, treated with argon ion beam, enhanced the intermolecular coupling of pentacene molecules. The study also proposes the explanation for the mechanism of carrier transportation in pentacene films.
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81.05.Hd Other semiconductors
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
68.55.A- Nucleation and growth
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
78.66.Qn Polymers; organic compounds
85.30.Tv Field effect devices

Brownian motion field dependent mobility theory of hopping transport process

Lin Ke, Soo Jin Chua, Ronald Cai Cheng Han, Lin Ting Ting, and Chellapan Vijila

J. Appl. Phys. 99, 114512 (2006); http://dx.doi.org/10.1063/1.2201852 (4 pages) | Cited 4 times

Online Publication Date: 7 June 2006

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A Brownian motion theory of hopping mobility has been formulated based on the one-dimensional hopping conduction model between localized states. The probability of hopping in the direction of the applied electric field and the duration of the hop between the localized states are assumed to be field dependent and thermally activated. The general form of the Brownian motion mobility model fitted well with the time of flight results measured in the low field regime and for most part of the mobility data extracted from the space charge limited conduction applied to tris-(8-oxyquinolato) aluminum (Alq3) in higher field regime. The Brownian motion model can be modified in order to account for the dependence of charge mobility in the higher electric field regime and at higher temperatures. The variation of charge mobility with applied electric field was fitted using the Brownian motion theory. The hopping time and the hopping distance were extracted from the fit and found to be about 3 ps and 0.9 nm, respectively for Alq3 at room temperature.
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72.20.Ee Mobility edges; hopping transport
71.55.Jv Disordered structures; amorphous and glassy solids
72.20.Ht High-field and nonlinear effects
05.40.Jc Brownian motion

Complex microcalorimeter models and their application to position-sensitive detectors

Enectali Figueroa-Feliciano

J. Appl. Phys. 99, 114513 (2006); http://dx.doi.org/10.1063/1.2191449 (11 pages) | Cited 13 times

Online Publication Date: 8 June 2006

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We present a general formalism for calculating the linear response, noise spectrum, and energy resolution of complex calorimeters. Using this formalism calorimeters with arbitrary numbers of distinct linked heat capacity systems and/or coupled thermometers can be analyzed. We use this formalism to derive the theoretical resolution of an imaging microcalorimeter called a position- sensitive transition-edge sensor.
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07.20.Fw Calorimeters
29.40.Gx Tracking and position-sensitive detectors

Pinholelike defects in multistack 1.3 μm InAs quantum dot laser

Wei-Sheng Liu, Holin Chang, Yu-Shen Liu, and Jen-Inn Chyi

J. Appl. Phys. 99, 114514 (2006); http://dx.doi.org/10.1063/1.2202195 (5 pages) | Cited 5 times

Online Publication Date: 12 June 2006

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The pinholelike defects often observed in multistack InAs quantum dot structures on GaAs have been investigated comprehensively. Due to the high surface stress of InAs quantum dots, the overgrowth of GaAs and InGaAs capping layers on InAs quantum dots is far from conformal and leads to the formation of these defects. Growth interruptions during GaAs spacer layer formation and thermal annealing after the GaAs growth are employed to completely eliminate the pinholelike defects in multistack quantum dot structures. Ridge-waveguide 1.32 μm InAs quantum dot lasers prepared by this method exhibit internal quantum efficiency as high as 62%.
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42.55.Px Semiconductor lasers; laser diodes
68.65.Hb Quantum dots (patterned in quantum wells)
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy

Effects of metal-doped indium-tin-oxide buffer layers in organic light-emitting devices

T.-H. Chen, T. J. Wu, J. Y. Chen, and Y. Liou

J. Appl. Phys. 99, 114515 (2006); http://dx.doi.org/10.1063/1.2198932 (6 pages) | Cited 2 times

Online Publication Date: 12 June 2006

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Organic light-emitting devices were fabricated by using different metal (V, Zr, Hf)-doped indium-tin-oxide (ITO) buffer layers on an ITO anode. The metal-doped ITO buffer layers were 15 nm thick with different metal concentrations. Both resistivity and work function of the ITO buffer layer were manipulated by these metal dopants. Different effects on the devices, such as reduced turn-on voltage, improved luminance, and enhanced current efficiency, were investigated. A low turn-on voltage was observed for devices with small work function and resistivity. The lowest turn-on voltage (3 V) was found on a device with a V-doped ITO buffer layer. The devices usually have a similar current density (J)-voltage (V) characteristics, but not the luminance-J or the current efficiency-J characteristics when the ITO buffer layers have the same work function. The devices with the Hf-doped ITO buffer layers show the best luminance performance among those considered. At 100 mA/cm2, a luminance of 15,000 cd/m2, and a current efficiency of 15 cd/A have been achieved. The balance between the carrier concentration and the energy barrier for the hole injection is possibly responsible for such performance.
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85.60.Jb Light-emitting devices
85.40.Ry Impurity doping, diffusion and ion implantation technology

Three-dimensional analytical modeling of nanocrystal memory electrostatics

Udayan Ganguly, Venkat Narayanan, Chungho Lee, Tuo-Hung Hou, and Edwin C. Kan

J. Appl. Phys. 99, 114516 (2006); http://dx.doi.org/10.1063/1.2202695 (6 pages) | Cited 1 time

Online Publication Date: 12 June 2006

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The integration of a two-dimensional distribution of discrete nanoscale floating gates in the nonvolatile memory gate stack produces significant three-dimensional (3D) electrostatic effects in contrast to the conventional flash memory modeling where a one-dimensional (1D) treatment is often sufficient. We have developed an analytical model for 3D electrostatics, which can not only enhance design intuition for device optimization but also provide convenient integration with a Schrödinger solver for self-consistent transport calculations since it is independent of discretization requirements. The model is validated by comparing with a finite-element Maxwell equation solver. The 3D analytical model has a much lower root-mean-square error than the 1D formulation for electrostatic potentials and fields in the tunneling path.
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85.35.-p Nanoelectronic devices
73.40.Gk Tunneling
41.20.Cv Electrostatics; Poisson and Laplace equations, boundary-value problems
84.30.Sk Pulse and digital circuits

Effects of rapid thermal annealing on device characteristics of InGaAs/GaAs quantum dot infrared photodetectors

L. Fu, H. H. Tan, I. McKerracher, J. Wong-Leung, C. Jagadish, N. Vukmirović, and P. Harrison

J. Appl. Phys. 99, 114517 (2006); http://dx.doi.org/10.1063/1.2202704 (8 pages) | Cited 24 times

Online Publication Date: 13 June 2006

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In this work, rapid thermal annealing was performed on InGaAs/GaAs quantum dot infrared photodetectors (QDIPs) at different temperatures. The photoluminescence showed a blueshifted spectrum in comparison with the as-grown sample when the annealing temperature was higher than 700 °C, as a result of thermal interdiffusion of the quantum dots (QDs). Correspondingly, the spectral response from the annealed QDIP exhibited a redshift. At the higher annealing temperature of 800 °C, in addition to the largely redshifted photoresponse peak of 7.4 μm (compared with the 6.1 μm of the as-grown QDIP), a high energy peak at 5.6 μm (220 meV) was also observed, leading to a broad spectrum linewidth of 40%. This is due to the large interdiffusion effect which could greatly vary the composition of the QDs and thus increase the relative optical absorption intensity at higher energy. The other important detector characteristics such as dark current, peak responsivity, and detectivity were also measured. It was found that the overall device performance was not affected by low annealing temperature, however, for high annealing temperature, some degradation in device detectivity (but not responsivity) was observed. This is a consequence of increased dark current due to defect formation and increased ground state energy.
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07.57.Kp Bolometers; infrared, submillimeter wave, microwave, and radiowave receivers and detectors
85.60.Gz Photodetectors (including infrared and CCD detectors)
61.72.Cc Kinetics of defect formation and annealing
61.82.Fk Semiconductors
78.67.Hc Quantum dots
72.40.+w Photoconduction and photovoltaic effects

Spectral characteristics of computer screen photoassisted classification

D. Filippini and I. Lundström

J. Appl. Phys. 99, 114518 (2006); http://dx.doi.org/10.1063/1.2195017 (8 pages) | Cited 4 times

Online Publication Date: 15 June 2006

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The computer screen photoassisted technique (CSPT) is a practical method for the classification of colored or fluorescent substances such as those present in bioassays but using standard computer sets and regular web cameras as all instruments. It is empirically known that the performance of the CSPT classification depends on the composition of the illuminating sequences displayed by the computer screens during the measurements, and by the way that substance fingerprints from these measurements are composed. Here the illuminating conditions are examined with the help of a CSPT model that allows to examine the physical grounds of optimum illuminating sequences different from just three screen primaries and to assess the limitations and importance of longer illuminating sequences in practical determinations.
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87.64.-t Spectroscopic and microscopic techniques in biophysics and medical physics
87.80.-y Biophysical techniques (research methods)

Comparison of organic diode structures regarding high-frequency rectification behavior in radio-frequency identification tags

Soeren Steudel, Stijn De Vusser, Kris Myny, Martijn Lenes, Jan Genoe, and Paul Heremans

J. Appl. Phys. 99, 114519 (2006); http://dx.doi.org/10.1063/1.2202243 (7 pages) | Cited 33 times

Online Publication Date: 15 June 2006

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In this article, we compare the direct current (dc) and high-frequency performance of two different organic diode structures, a vertical diode and an organic field effect transistor (OTFT) with shorted drain-gate contact, regarding their application in a rectifying circuit. For this purpose, we fabricated both diode structures using the organic semiconductor pentacene. dc measurements were performed showing a space-charge-limited current mobility of more than 0.1 cm2/V s for the vertical diode and a field effect mobility of 0.8 cm2/V s for the OTFT with shorted source-drain. High-frequency measurements of those diode structures in a rectifier configuration show that both types of diodes are able to follow the base-carrier frequency of 13.56 MHz which is essential for viable radio-frequency-identification (rf-ID) tags. Based on those results we evaluate the performance limits and advantages of each diode configuration regarding their application in an organic rf-ID tag.
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85.30.Kk Junction diodes
85.30.Tv Field effect devices
84.40.Ua Telecommunications: signal transmission and processing; communication satellites
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