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Journal of Applied Physics / Volume 98 / Issue 5 / ELECTRONIC STRUCTURE AND TRANSPORT

J. Appl. Phys. 98, 053712 (2005); http://dx.doi.org/10.1063/1.2031947 (8 pages)

Valence-band electron-tunneling measurement of the gate work function: Application to the high-κ/polycrystalline-silicon interface

Luigi Pantisano1, Valeri Afanas’ev2, Geoffrey Pourtois1, and P. J. Chen3

1Interuniversity MicroElectronics Center (IMEC), Kapeldreef 75, B-3001 Leuven, Belgium
2University of Leuven, Celestinenlaan 200D, B-3001 Leuven, Belgium
3Texas Instrument Inc., Dallas, Texas 75243

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(Received 24 November 2004; accepted 15 July 2005; published online 13 September 2005)

A technique is demonstrated to measure the band alignment between the silicon substrate and the gate electrode using the valence-band electron tunneling (VBET). When an n-channel metal-oxide-semiconductor field-effect transistor is biased in inversion the valence-band electron from the Si substrate can tunnel into the gate [ A. Shanware, J. Shiely, H. Massoud, E. Vogel, K. Henson, A. Srivastava, C. Osburn, J. Hauser, and J. Wortman, Tech. Dig.-Int. Electron Devices Meet.1999, 815 ], depending on the overlapping of the density of states in the Si valence band and the gate. This technique is suitable to measure the band alignment between the silicon substrate and the gate electrode with any given gate dielectric, provided that both the gate and substrate leakages are dominated by direct tunneling. This technique has been applied to study the SiO2/polycrystalline-silicon (poly-Si) interface behavior in the presence of submonolayer traces of HfO2. The general applicability of VBET to arbitrary gate stacks is finally demonstrated with the HfSiON/poly-Si case.

© 2005 American Institute of Physics

Article Outline

  1. INTRODUCTION
  2. EXPERIMENT
  3. THE VALENCE-BAND ELECTRON TUNNELING
  4. APPLICATION OF VBET TO THE HIGH-Κ/POLY-Si INTERFACE
    1. The model of the high- κ /poly-Si interface
    2. Large density of states at the high-κ /poly-Si interface
    3. Measurement of the band alignment using the VBET
  5. SUMMARY AND CONCLUSIONS

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KEYWORDS and PACS

Keywords

silicon, silicon compounds, hafnium compounds, elemental semiconductors, semiconductor-insulator boundaries, electrodes, MOSFET, tunnelling, valence bands, electronic density of states

PACS

  • 85.30.Tv

    Field effect devices

  • 73.20.At

    Surface states, band structure, electron density of states

  • 73.40.Qv

    Metal-insulator-semiconductor structures (including semiconductor-to-insulator)

  • 73.40.Gk

    Tunneling

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.2031947

PUBLICATION DATA

ISSN

0021-8979 (print)  
1089-7550 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

For access to fully linked references, you need to log in.
    S. Zafar, C. Cabral, R. Amos, and A. Callegari, Appl. Phys. Lett. 80, 4858 (2002)APPLAB000080000025004858000001.

    M. L. Green et al., J. Appl. Phys. 92, 7168 (2002)JAPIAU000092000012007168000001.

    D. M. Ceperdley and J. B. Alder, Phys. Rev. Lett. 45, 566 (1980).

    N. Trouillier and J. L. Martins, Phys. Rev. B 43, 1993 (1991).

    V. Afanasiev, A. Stesmans, L. Pantisano, and T. Schram, Appl. Phys. Lett. 86, 232902 (2005)APPLAB000086000023232902000001.

    R. J. Powell, J. Appl. Phys. 41, 2424 (1970)JAPIAU000041000006002424000001.


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