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J. Appl. Phys. 98, 041301 (2005); http://dx.doi.org/10.1063/1.1992666 (103 pages)
A comprehensive review of ZnO materials and devices
(Received 2 February 2005; accepted 13 June 2005; published online 30 August 2005)
© 2005 American Institute of Physics
Article Outline
- INTRODUCTION
- PROPERTIES OF ZnO
- Crystal structures
- Lattice parameters
- Electronic band structure
- Mechanical properties
- Lattice dynamics
- Thermal properties
- Thermal-expansion coefficients
- Thermal conductivity
- Specific heat
- Electrical properties of undoped ZnO
- Low-field transport
- High-field transport
- ZnO GROWTH
- Bulk growth
- Substrates
- rf magnetron sputtering
- Molecular-beam epitaxy
- Pulsed-laser deposition
- Chemical-vapor deposition
- OPTICAL PROPERTIES OF ZnO
- Prelude
- Optical transitions in ZnO
- Free excitons and polaritons
- Bound excitons
- Two-electron satellites in PL
- DAP and LO-phonon replicas in PL
- Temperature-dependent PL measurements
- Time-resolved PL on ZnO
- Refractive index of ZnO
- Stimulated emission in ZnO
- Thin films
- Polycrystalline ZnO films and “random lasers”
- Multiple-quantum wells
- Stimulated-emission dynamics
- DEFECTS IN ZnO
- Predictions from first principles
- Experimental studies of native and unintentionally introduced defects
- Shallow acceptor in ZnO
- Green luminescence band
- Yellow luminescence band
- Red luminescence band
- DOPING OF ZnO
- n -type doping
- p
-type doping
- Nitrogen doping
- Codoping method: Nitrogen+group III
- Other dopants in group V
- ZnO-BASED DILUTE MAGNETIC SEMICONDUCTORS
- Theory of ZnO-based magnetic semiconductors
- Experimental results on ZnO-based magnetic semiconductors
- BAND-GAP ENGINEERING
- MgxZn1−xO alloy
- CdyZn1−yO alloy
- PROCESSING, DEVICES, AND HETEROSTRUCTURES
- Ohmic contacts to ZnO
- Schottky contacts to ZnO
- Heterostructure devices
- Light-emitting devices
- Photodiodes
- Metal-insulator-semiconductor diodes
- Transparent thin-film transistors
- ZnO NANOSTRUCTURES
- SUMMARY
RELATED DATABASES
KEYWORDS and PACS
ARTICLE DATA
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