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Journal of Applied Physics / Volume 98 / Issue 1 / NANOSCALE SCIENCE AND DESIGN

J. Appl. Phys. 98, 014314 (2005); doi:10.1063/1.1946196 (10 pages)

Robust and regenerable integrally gated carbon nanotube field emitter arrays

David S. Y. Hsu and Jonathan L. Shaw

Naval Research Laboratory, Washington DC 20375-5320

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(Received 4 October 2004; accepted 10 May 2005; published online 11 July 2005)

We have grown multiwalled carbon nanotubes by chemical-vapor deposition on two types of gated structures, one containing a silicon post, and another having an open aperture. A gate current to anode-current ratio of 2.5%, the lowest of any nanotube field emitter arrays was measured for the open aperture configuration. The silicon post structures produced 1-nA emission current at gate voltages below 20 V and up to 1 mA at 40 V (from 0.5-mm2 area). The emission was relatively stable compared to other field emitter arrays and destructive arcing was not observed. The gate voltage needed to produce a given emission current was reduced by adsorbed water vapor and was unaffected by xenon. Emission in hydrogen at pressures near 10−4 Torr also increased the emission current, and restored a large fraction of the original emission current to arrays degraded by operation in oxygen. Electron energy distributions broaden and shift to lower energies at higher emission current. The broadening can be explained by the potentials developed at the silicon-nanotube contacts, and at the nanotube-vacuum interface.

© 2005

Article Outline

  1. INTRODUCTION
  2. EXPERIMENTAL
    1. Growing cNTs on gated silicon post structures
    2. Growing nanotubes in gated open apertures
    3. Hydrogen treatment for emission regeneration
    4. Emission measurements
  3. RESULTS AND DISCUSSION
    1. Carbon nanotube-on-silicon post FEAs
    2. Carbon nanotube-in-open aperture FEA
    3. Emission enhancement and regeneration by hydrogen treatment
  4. CONCLUSION

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KEYWORDS and PACS

Keywords

carbon nanotubes, silicon, elemental semiconductors, nanotube devices, field emitter arrays, chemical vapour deposition

PACS

  • 85.35.Kt

    Nanotube devices

  • 85.45.Db

    Field emitters and arrays, cold electron emitters

  • 81.15.Gh

    Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)

ARTICLE DATA

Permalink
http://link.aip.org/link/doi/10.1063/1.1946196

PUBLICATION DATA

ISSN:

0021-8979 (print)  
1089-7550 (online)

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