Photoluminescence (PL) spectra induced by ultraviolet photons were measured for amorphous hafnia and zirconia deposited by plasma-enhanced chemical-vapor deposition (PECVD), amorphous hafnia deposited by pulse laser deposition, and crystalline yttria-stabilized zirconia. Two kinds of samples were prepared for both hafnia and zirconia deposited by PECVD using different source alkoxides in different deposition chambers. A PL peak was observed around 2.8 eV similarly in all hafnia and zirconia samples, irrespective of the difference in crystallinity, oxygen deficiency, source alkoxide, deposition method, or the substrate material. The decay profile of this PL is also similar in all the samples. These facts clearly show that neither impurities, oxygen vacancy, nor defects at the interface between the sample and the substrate are responsible for the PL. It is a luminescence inherent in hafnia and zirconia and is most likely due to radiative recombination between localized states at the band tails. When the samples were annealed in oxygen, a new PL peak appeared around 4.2 eV in all the amorphous samples. Its decay profile is also in common with these samples. Vacuum-ultraviolet absorption measurements and PL excitation measurements indicate that the 4.2-eV PL is excited due to the interband absorption.