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Journal of Applied Physics / Volume 97 / Issue 4 / DEVICE PHYSICS

J. Appl. Phys. 97, 044504 (2005); http://dx.doi.org/10.1063/1.1850199 (5 pages)

Temperature-induced voltage drop rearrangement and its effect on oxide breakdown in metal-oxide-semiconductor capacitor structure

Tsung-Miau Wang and Jenn-Gwo Hwu

EE-II, R.446, Department of Electrical Engineering/Graduate Institute of Electronics Engineering, National Taiwan University, Taipei, Taiwan, Republic of China

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(Received 30 August 2004; accepted 29 November 2004; published online 26 January 2005)

This work studies the breakdown (BD) characteristics of metal-oxide-semiconductor (MOS) capacitors at various temperatures. The oxide thickness and temperature significantly affect the probability of BD. BD does not easily occur in ultrathin silicon dioxide when biased in the positive substrate injection region of MOS(p). However, the BD frequency increases dramatically with the oxide thickness or the temperature. The phenomenon was explained by temperature effect. When the temperature increases, the voltage drop across the silicon dioxide increases; on the contrary, the voltage across the (deep) depletion region in the Si substrate declines. Also, the enhancement of percolation and the increase in the number of interface states result in the more severe degradation of the silicon dioxide. Also, a thicker oxide has more Dit, and so undergoes degradation more easily. Finally, the C–V characteristics of the MOS capacitor in the (deep) depletion region are also discussed in order to understand the mechanisms among temperature, thickness, and percolation effect.

© 2005 American Institute of Physics

Article Outline

  1. INTRODUCTION
  2. EXPERIMENT
  3. RESULTS AND DISCUSSION
  4. CONCLUSIONS

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KEYWORDS and PACS

Keywords

aluminium, silicon compounds, silicon, elemental semiconductors, MOS capacitors, thin film capacitors, semiconductor device breakdown, percolation, interface states, deep levels

PACS

  • 84.32.Tt

    Capacitors

  • 85.30.Tv

    Field effect devices

  • 73.40.Qv

    Metal-insulator-semiconductor structures (including semiconductor-to-insulator)

  • 73.20.At

    Surface states, band structure, electron density of states

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.1850199

PUBLICATION DATA

ISSN

0021-8979 (print)  
1089-7550 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

For access to fully linked references, you need to log in.
    M. Houssa, T. Nigam, P. W. Mertens, and M. M. Heyns, J. Appl. Phys. 84, 4351 (2004)JAPIAU000084000008004351000001.

    E. M. Vogel, M. D. Edelstein, and J. S. Suehle, J. Appl. Phys. 90, 2338 (2001)JAPIAU000090000005002338000001.

    A. Meinertzhágen, C. Petit, D. Zander, O. Simonetti, T. Maurel, and M. Jourdain, J. Appl. Phys. 91, 2123 (2004)JAPIAU000091000004002123000001.


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