Dopant penetration studies through Hf silicate

Quevedo-Lopez, M. A.; Visokay, M. R.; Chambers, J. J.; Bevan, M. J.; LiFatou, A.; Colombo, L.; Kim, M. J.; Gnade, B. E.; Wallace, R. M.

doi:doi:10.1063/1.1846138

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We present a study of the penetration of B, P, and As through Hf silicate (HfSi_xO_y) and the effect of N incorporation in Hf silicate (HfSi_xO_yN_z) on dopant penetration from doped polycrystalline silicon capping layers. The extent of penetration through Hf silicate was found to be dependent upon the thermal annealing budget for each dopant investigated as follows: B(T ≥ 950 °C/60 s), P(T ≥ 1000 °C/20 s), and As (T ≥ 1050 °C/60 s). We propose that the enhanced diffusion observed for these dopants in HfSi_xO_y, compared with that of SiO₂ films, is related to grain boundary formation resulting from HfSi_xO_y film crystallization. We also find that, as in the case of SiO₂, N incorporation inhibits dopant (B, P, and As) diffusion through the Hf silicate and thus penetration into the underlying Si substrate. Only B penetration is clearly observed through HfSiON films for anneals at 1050 °C for durations of 10 s or longer. The calculated B diffusivity through the HfSi_xO_yN_z layer is D₀ = 5.2×10⁻¹⁵ cm²/s.

Article Outline

INTRODUCTION
EXPERIMENT
1. HfSiO films
2. HfSiON films
RESULTS
1. As-deposited HfSiO films
2. Annealed HfSiO Films
  1. B-Penetration through HfSiO thin films
  2. P penetration through HfSiO thin films
  3. As penetration through HfSiO films
3. HfSiON films
  1. B penetration through HfSiON thin films
  2. P and As penetration through HfSiON thin films
DISCUSSION
1. Description of model to evaluate diffusivity
2. Results of the Model
  1. Boron Penetration
  2. Phosphorus Penetration
  3. Arsenic Penetration
3. Comparison of dopant penetration for HfSiO and HfSiON film
CONCLUSIONS

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KEYWORDS and PACS

Keywords

silicon, hafnium compounds, boron, arsenic, phosphorus, elemental semiconductors, dielectric thin films, rapid thermal annealing, doping profiles, grain boundaries, impurity distribution, ion implantation, diffusion, etching, crystallisation, semiconductor-insulator-semiconductor structures, secondary ion mass spectra

PACS

77.84.Bw

Elements, oxides, nitrides, borides, carbides, chalcogenides, etc.
66.30.J-

Diffusion of impurities
66.30.Dn

Theory of diffusion and ionic conduction in solids
61.72.up

Other materials
61.72.Cc

Kinetics of defect formation and annealing
61.72.S-

Impurities in crystals
61.72.Mm

Grain and twin boundaries
81.65.Cf

Surface cleaning, etching, patterning
68.55.Ln

Defects and impurities: doping, implantation, distribution, concentration, etc.
68.55.-a

Thin film structure and morphology
77.55.-g

Dielectric thin films

ARTICLE DATA

Digital Object Identifier

http://dx.doi.org/10.1063/1.1846138

PUBLICATION DATA

ISSN

0021-8979 (print)

1089-7550 (online)

Publisher

$abstract.society.value is a Member of CrossRef

American Institute of Physics

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