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J. Appl. Phys. 97, 023513 (2005); http://dx.doi.org/10.1063/1.1830087 (6 pages)

Luminescence and spectroscopic behavior of Eu3+-doped Y2O3 and Lu2O3 epitaxial films grown by pulsed-laser deposition

A. K. Pradhan1, Kai Zhang1, S. Mohanty1, J. Dadson1, D. Hunter1, G. B. Loutts1, U. N. Roy2, Y. Cui2, A. Burger2, and A. L. Wilkerson3

1Center for Materials Research, Norfolk State University, 700 Park Avenue, Norfolk, Virginia 23504
2Department of Physics, Fisk University, 1000, 17 Avenue North, Nashville, Tennessee 37208
3College of William and Mary, Applied Research Center, 12050 Jefferson Avenue, Suite 713 Newport News, Virginia 23606

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(Received 22 July 2004; accepted 20 October 2004; published online 23 December 2004)

We report on the fabrication of highly epitaxial Y2O3:Eu3+ and Lu2O3:Eu3+ films on sapphire and Si single crystalline, and quartz substrates under different growth and optimization conditions using pulsed-laser deposition technique. The films were characterized using x rays, microstructure, and spectroscopic measurements. Our results demonstrate superior spectroscopic performance on the films grown on sapphire substrates due to the high quality and epitaxial nature of the film. The surface morphology of the epitaxial films controls the photoluminescence property of these phosphors film.

© 2005 American Institute of Physics

Article Outline

  1. INTRODUCTION
  2. EXPERIMENTS
  3. RESULTS AND DISCUSSION
  4. CONCLUSION

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KEYWORDS and PACS

PACS

  • 78.66.Nk

    Insulators

  • 78.55.Hx

    Other solid inorganic materials

  • 78.30.Hv

    Other nonmetallic inorganics

  • 68.55.A-

    Nucleation and growth

  • 68.55.-a

    Thin film structure and morphology

  • 81.15.Fg

    Pulsed laser ablation deposition

  • 68.35.B-

    Structure of clean surfaces (and surface reconstruction)

  • 68.37.Ps

    Atomic force microscopy (AFM)

ARTICLE DATA

PUBLICATION DATA

ISSN

0021-8979 (print)  
1089-7550 (online)

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    References

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