Modifications of ZnO thin films under dense electronic excitation

Kumar, P. M. Ratheesh; Kartha, C. Sudha; Vijayakumar, K. P.; Singh, F.; Avasthi, D. K.; Abe, T.; Kashiwaba, Y.; Okram, G. S.; Kumar, M.; Kumar, Sarvesh

doi:doi:10.1063/1.1823574

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Amorphization and decomposition of scandium molybdate at high pressure

The behavior of negative thermal-expansion material scandium molybdate Sc2(MoO4)3 is investigated at high pressure (HP) and high temperature (HT) using x-ray diffraction, Raman spectroscopy, and scanning electron microscopy. The compound exhibits unusually high compressibility (bulk modulus ∼ 6 GPa) and undergoes amorphization at 12 GPa. On the other hand, in situ laser heating of amorphous samples inside the diamond-anvil cell is found to result in crystalline diffraction pattern and Raman sp...

Downconversion and upconversion dynamics in Pr-doped Y₃Al₅O₁₂ crystals

We have investigated the spectroscopic properties of praseodymium ion in a Y3Al5O12 sample. We obtained the luminescence spectra by exciting selectively the sample at 460 and 599 nm, resulting in the excitation of the and levels, respectively. With excitation in the level we obtained emission from this level and from the level. We used time resolved spectra and decay pattern inspection to assign spectral lines to specific radiative transitions. With excitation in the level we observed lumi...

Spray pyrolyzed ZnO films prepared using solution containing ethanol and water (volume ratio 1:1), exhibited optical transmission of 85% in the visible range and electrical resistivity of 78 Ω cm. These samples were irradiated using 120 MeV Au ion beam and then characterized using optical absorption and transmission, x-ray diffraction (XRD), electrical resistivity measurements, x-ray photoelectron spectroscopy (XPS), and photoluminescence studies. It appears that irradiation does not affect absorption edge while optical transmittance was slightly reduced. But intensities of peaks of XRD and photoluminescence were found to decrease continuously with increasing ion fluence. Electrical resistivity of the films decreased considerably (from 78 to 0.71 Ω cm) with increase in ion fluence. Atomic concentration from XPS analysis showed that Zn/O ratio is getting increased due to ion beam irradiation. Variations in carrier concentration were also measured using Hall measurements.

Article Outline

INTRODUCTION
EXPERIMENTAL
RESULTS AND DISCUSSION
1. XRD analysis
2. Optical studies
3. Electrical studies
4. Photoluminescence studies
5. XPS analysis
CONCLUSION

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KEYWORDS and PACS

Keywords

zinc compounds, II-VI semiconductors, wide band gap semiconductors, semiconductor thin films, semiconductor growth, ion beam effects, light absorption, electrical resistivity, light transmission, photoluminescence, carrier density, spray coating techniques, X-ray photoelectron spectra, X-ray diffraction

PACS

81.05.Dz

II-VI semiconductors
61.82.Fk

Semiconductors
73.20.Mf

Collective excitations (including excitons, polarons, plasmons and other charge-density excitations)
79.60.Dp

Adsorbed layers and thin films
61.80.Jh

Ion radiation effects
81.15.Rs

Spray coating techniques
73.61.Ga

II-VI semiconductors
78.55.Et

II-VI semiconductors
78.66.Hf

II-VI semiconductors

ARTICLE DATA

Digital Object Identifier

http://dx.doi.org/10.1063/1.1823574

PUBLICATION DATA

ISSN

0021-8979 (print)

1089-7550 (online)

Publisher

$abstract.society.value is a Member of CrossRef

American Institute of Physics

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