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1 Oct 2004

Volume 96, Issue 7, pp. 3601-4023

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Terahertz radiation from CdxHg1−xTe photoexcited by femtosecond laser pulses

A. Krotkus, R. Adomavičius, G. Molis, A. Urbanowicz, and H. Eusebe

J. Appl. Phys. 96, 4006 (2004); http://dx.doi.org/10.1063/1.1787133 (3 pages) | Cited 6 times

Online Publication Date: 23 September 2004

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Terahertz radiation from CdxHg1−xTe samples excited by femtosecond Ti:sapphire laser pulses were measured by using an ultrafast photoconductive antenna manufactured from low-temperature grown GaAs. Terahertz fields radiated by the samples of all three investigated alloy compositions with x=0, 0.2, and 0.3 were of the same order of magnitude. No azimuthal angle dependence of the radiated signal was detected, which evidences that linear current surge effect is dominating over nonlinear optical rectification.
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61.82.Fk Semiconductors
61.80.Ba Ultraviolet, visible, and infrared radiation effects (including laser radiation)
79.60.Bm Clean metal, semiconductor, and insulator surfaces

Highly ordered phthalocyanine thin films on a technically relevant polymer substrate

H. Peisert, X. Liu, D. Olligs, A. Petr, L. Dunsch, T. Schmidt, T. Chassé, and M. Knupfer

J. Appl. Phys. 96, 4009 (2004); http://dx.doi.org/10.1063/1.1787906 (3 pages) | Cited 14 times

Online Publication Date: 23 September 2004

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We have studied the molecular orientation of well-known representatives of organic semiconductors from the family of the phthalocyanines [copper phthalocyanine (CuPc) and its perfluorinated relative (CuPcF16)] on a conducting polymer thin film using polarization-dependent x-ray absorption spectroscopy. As a polymer substrate PEDOT:PSS [a mixture of poly-3,4-ethylenedioxy-thiophene (PEDOT) and polystyrenesulfonate (PSS), which is often applied as an electrode material in (all-)organic semiconductor devices] was spin coated onto indium-tin-oxide substrates. Even if the interfaces themselves are relatively ill defined (we found recently a mixing of the two organic materials and charge-transfer processes), a very high degree of molecular ordering is observed in the 20–50 nm thick phthalocyanine films.
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81.05.Hd Other semiconductors
78.66.Li Other semiconductors
78.70.Dm X-ray absorption spectra

Persistent spectral hole burning studies of europium-doped sodium germanate glass

Rajamohan R. Kalluru, Chandra R. Pulluru, and B. Rami Reddy

J. Appl. Phys. 96, 4012 (2004); http://dx.doi.org/10.1063/1.1787908 (3 pages) | Cited 2 times

Online Publication Date: 23 September 2004

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Persistent spectral hole burning has been observed in europium-doped sodium germanate glass. Hole-burning efficiency increased by 85% when the glasses were made in a reduced atmosphere, and hole burning was detected even at room temperature. There is evidence for photochemical as well as photophysical hole-burning mechanisms.
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78.55.Qr Amorphous materials; glasses and other disordered solids
82.50.-m Photochemistry

Theoretical prediction of the structure and properties of Sn3N4

M. Huang and Y. P. Feng

J. Appl. Phys. 96, 4015 (2004); http://dx.doi.org/10.1063/1.1788836 (3 pages) | Cited 3 times

Online Publication Date: 23 September 2004

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First-principles calculations based on plane-wave pseudopotential and local-density approximation (LDA) were carried out to study the structure and properties of Sn3N4. In agreement with experimentally determined crystal structure, γ-Sn3N4, which has a high density, was found to be most energetically favored among the structures considered. We also searched for other possible polymorphs of Sn3N4, which may be stable at higher pressure, by studying the properties of six additional high-pressure structures. Phase transition from the spinel structure to the CaFe2O4 and CaTi2O4-type structures can be expected at pressures of 60 GPa and 40 GPa, respectively. Sn3N4 is predicted to be a semiconductor with a band gap of 1.15 eV within the LDA.
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71.20.Nr Semiconductor compounds
68.43.Bc Ab initio calculations of adsorbate structure and reactions
71.15.Mb Density functional theory, local density approximation, gradient and other corrections
61.66.Fn Inorganic compounds
81.30.Hd Constant-composition solid-solid phase transformations: polymorphic, massive, and order-disorder
62.50.-p High-pressure effects in solids and liquids
64.70.K- Solid-solid transitions
71.15.Dx Computational methodology (Brillouin zone sampling, iterative diagonalization, pseudopotential construction)

The effect of annealing environment on the luminescence of silicon nanocrystals in silica

A. R. Wilkinson and R. G. Elliman

J. Appl. Phys. 96, 4018 (2004); http://dx.doi.org/10.1063/1.1789265 (3 pages) | Cited 24 times

Online Publication Date: 23 September 2004

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The effect of annealing environment on the photoluminescence from silicon nanocrystals synthesized in fused silica by ion implantation and thermal annealing is examined as a function of annealing temperature and time. The choice of annealing environment (Ar, N2, or 5% H2 in N2) is found to affect the shape and intensity of luminescence emission spectra, an effect that is attributed both to variations in nanocrystal size and defect states at the nanocrystal/oxide interface. This is supported by Raman spectroscopy.
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61.72.Cc Kinetics of defect formation and annealing
81.05.Cy Elemental semiconductors
78.55.Ap Elemental semiconductors
78.30.Am Elemental semiconductors and insulators
81.07.Bc Nanocrystalline materials
78.67.Bf Nanocrystals, nanoparticles, and nanoclusters
81.40.Gh Other heat and thermomechanical treatments
61.72.uf Ge and Si
71.55.Cn Elemental semiconductors
81.65.Rv Passivation

Spectroscopic investigation of the plasma in a hollow anode with an incorporated ferroelectric plasma source

A. Krokhmal, J. Z. Gleizer, Ya. E. Krasik, D. Yarmolich, J. Felsteiner, and V. Bernshtam

J. Appl. Phys. 96, 4021 (2004); http://dx.doi.org/10.1063/1.1789625 (3 pages) | Cited 10 times

Online Publication Date: 23 September 2004

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Spectroscopic measurements are reported of the plasma formed inside a hollow anode (HA) with a ferroelectric plasma source (FPS) incorporated in it. The HA was used as a cathode in a diode supplied by an accelerating pulse (≤300 kV, ≤400 ns). It was found that the HA discharge (1.2 kA, 10 μs) is accompanied by the formation of a dense (≈8×1014 cm−3) plasma layer at the surface of the FPS. This surface plasma serves as a practically unlimited source of electrons. In the bulk of the HA plasma the density is ≈3×1013 cm−3 and it remains the same during the accelerating pulse whereas the plasma electron temperature increases from 4 to 11 eV.
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52.75.Fk Magnetohydrodynamic generators and thermionic convertors; plasma diodes
52.50.Dg Plasma sources
52.25.-b Plasma properties
52.80.-s Electric discharges
41.75.Fr Electron and positron beams
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