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J. Appl. Phys. 96, 2204 (2004); doi:10.1063/1.1763991 (6 pages)

Electrical characterization of amorphous silicon nanoparticles

Z. Shen1, U. Kortshagen2, and S. A. Campbell1

1Department of Electrical and Computer Engineering, University of Minnesota, Minneapolis, Minnesota 55455
2Department of Mechanical Engineering, University of Minnesota, Minneapolis, Minnesota 55455

(Received 31 March 2004; accepted 27 April 2004)

Electrical contact to amorphous silicon nanoparticles was established with a method that self aligns the contacts to the particles. Charge transport characteristics were studied as a function of temperature and voltage. The conduction in these devices was not limited by the metal∕semiconductor barrier; rather it was limited by charge trapping in the particles themselves. The data are well fit to theory. It was shown that the space charge limited current (SCLC) model fits the medium voltage range (2–6 V), while space charged limited current with Frenkel–Poole effect fits the relatively high voltage range (5–8 V). Using a model for space charge limited current in the presence of an exponential distribution of traps, we estimate that the trap density is 2×1019 cm−3. Based on SCLC enhanced with Frenkel–Poole effect, the activation energy measured at high voltage was determined to 0.44 eV. This agrees well with the medium voltage activation energy, 0.41 eV.

© 2004 American Institute of Physics

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KEYWORDS and PACS

PACS

  • 73.40.Sx

    Metal-semiconductor-metal structures

  • 61.46.-w

    Structure of nanoscale materials

  • 73.50.Fq

    High-field and nonlinear effects

PUBLICATION DATA

ISSN:

0021-8979 (print)  
1089-7550 (online)

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