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1 Dec 2004

Volume 96, Issue 11, pp. 5947-6943

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Ion-beam-induced amorphization and recrystallization in silicon

Lourdes Pelaz, Luis A. Marqués, and Juan Barbolla

J. Appl. Phys. 96, 5947 (2004); http://dx.doi.org/10.1063/1.1808484 (30 pages) | Cited 37 times

Online Publication Date: 22 November 2004

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Ion-beam-induced amorphization in Si has attracted significant interest since the beginning of the use of ion implantation for the fabrication of Si devices. A number of theoretical calculations and experiments were designed to provide a better understanding of the mechanisms behind the crystal-to-amorphous transition in Si. Nowadays, a renewed interest in the modeling of amorphization mechanisms at atomic level has arisen due to the use of preamorphizing implants and high dopant implantation doses for the fabrication of nanometric-scale Si devices. In this paper we will describe the most significant experimental observations related to the ion-beam-induced amorphization in Si and the models that have been developed to describe the process. Amorphous Si formation by ion implantation is the result of a critical balance between the damage generation and its annihilation. Implantation cascades generate different damage configurations going from isolated point defects and point defect clusters in essentially crystalline Si to amorphous pockets and continuous amorphous layers. The superlinear trend in the damage accumulation with dose and the existence of an ion mass depending critical temperature above which it is not possible to amorphize are some of the intriguing features of the ion-beam-induced amorphization in Si. Phenomenological models were developed in an attempt to explain the experimental observations, as well as other more recent atomistic models based on particular defects. Under traditional models, amorphization is envisaged to occur through the overlap of isolated damaged regions created by individual ions (heterogeneous amorphization) or via the buildup of simple defects (homogeneous amorphization). The development of atomistic amorphization models requires the identification of the lattice defects involved in the amorphization process and the characterization of their annealing behavior. Recently, the amorphization model based on the accumulation and interaction of bond defects or IV pairs has been shown to quantitatively reproduce the experimental observations. Current understanding of amorphous Si formation and its recrystallization, predictive capabilities of amorphization models, and residual damage after regrowth are analyzed.
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61.80.Jh Ion radiation effects
61.82.Fk Semiconductors
61.72.J- Point defects and defect clusters
61.43.Dq Amorphous semiconductors, metals, and alloys
61.72.uf Ge and Si
81.40.Ef Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization
71.55.Cn Elemental semiconductors
65.60.+a Thermal properties of amorphous solids and glasses: heat capacity, thermal expansion, etc.
81.30.Dz Phase diagrams of other materials
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Laser-induced generation of micrometer-sized luminescent patterns on rare-earth-doped amorphous films

A. R. Zanatta and C. T. M. Ribeiro

J. Appl. Phys. 96, 5977 (2004); http://dx.doi.org/10.1063/1.1794363 (5 pages) | Cited 10 times

Online Publication Date: 22 November 2004

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Room-temperature photoluminescence has been achieved from rare-earth-doped amorphous (a‐) GeN films. The samples were prepared by the radio-frequency-sputtering method, and light emission from the rare-earth (RE) centers was obtained after irradiating the films with a highly focused laser beam. As a result of this laser annealing procedure, almost circular holes with approximately 1‐μm diameter were produced on the surface of the a‐GeN films. The area nearby these holes correspond to crystalline Ge and coincide with the regions, where relatively strong RE-related luminescence takes place. These laser-annealed areas can be easily and conveniently managed in order to generate different microscopic luminescent patterns. Depending on the RE ion employed, visible and near-infrared light emission were obtained from the patterns so produced. The development of these micrometer-sized luminescent centers, as well as their probable mechanisms of excitation-recombination, will be presented and discussed. The importance of the current experimental results to future technological applications such as microdevices, for example, will also be outlined.
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78.55.Hx Other solid inorganic materials
78.66.Jg Amorphous semiconductors; glasses
61.82.Fk Semiconductors
61.80.Ba Ultraviolet, visible, and infrared radiation effects (including laser radiation)
68.55.-a Thin film structure and morphology
81.05.Gc Amorphous semiconductors
68.55.A- Nucleation and growth
81.15.Cd Deposition by sputtering
61.72.J- Point defects and defect clusters

A comparative study of inverted-opal titania photonic crystals made from polymer and silica colloidal crystal templates

Su-Lan Kuai, Vo-Van Truong, Alain Haché, and Xing-Fang Hu

J. Appl. Phys. 96, 5982 (2004); http://dx.doi.org/10.1063/1.1806551 (5 pages) | Cited 8 times

Online Publication Date: 22 November 2004

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Photonic crystals with an inverted-opal structure using polymer and silica colloidal crystal templates were prepared and compared. We show that the behaviors of the template during the removal process and heat treatment are determinant factors on the crystal formation. While both templates result in ordered macroporous structures, the optical quality in each case is quite different. The removal of the polymer template by sintering causes a large shrinkage of the inverted framework and produces a high density of cracks in the sample. With a silica template, sintering actually improves the quality of the inverted structure by enhancing the template’s mechanical stability, helping increase the filling fraction, and consolidating the titania framework. The role of the other important factors such as preheating and multiple infiltrations is also investigated.
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81.05.Mh Cermets, ceramic and refractory composites
81.05.Rm Porous materials; granular materials
42.70.Qs Photonic bandgap materials
82.70.Dd Colloids
81.20.Ev Powder processing: powder metallurgy, compaction, sintering, mechanical alloying, and granulation
62.20.M- Structural failure of materials
81.40.Np Fatigue, corrosion fatigue, embrittlement, cracking, fracture, and failure
81.40.Gh Other heat and thermomechanical treatments

Ultrabroadband single-mode long-period fiber gratings using high-order cladding modes

Vinayak Dangui, Michel J. F. Digonnet, and Gordon S. Kino

J. Appl. Phys. 96, 5987 (2004); http://dx.doi.org/10.1063/1.1805721 (5 pages) | Cited 2 times

Online Publication Date: 22 November 2004

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We demonstrate analytically that long-period fiber gratings operating near the maximum of a cladding mode's phase-matching curve can be designed to exhibit far broader bandwidths (around 800 nm) than reported to date, at any center wavelength and with any peak attenuation. In a given fiber, the center wavelength and attenuation are controlled independently by properly selecting the grating period and length, respectively, Extremely large bandwidths are obtained by increasing the grating index perturbation, by increasing the fiber core radius, and∕or optimizing the numerical aperture. Implemented with a mechanically induced grating, this concept produced a 1465 nm filter with a record 10 dB bandwidth of 360 nm.
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42.81.Bm Fabrication, cladding, and splicing
42.79.Dj Gratings

Spectrally resolved spontaneous emission patterns of oxide-confined vertical-cavity surface-emitting lasers

T. C. Lu, W. C. Hsu, Y. S. Chang, H. C. Kuo, and S. C. Wang

J. Appl. Phys. 96, 5992 (2004); http://dx.doi.org/10.1063/1.1815387 (4 pages) | Cited 2 times

Online Publication Date: 22 November 2004

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Spectrally resolved spontaneous emission patterns of oxide-confined vertical-cavity surface-emitting lasers under the subthreshold condition were investigated. The spontaneous emission mode patterns show clear and stable Hermite–Gaussian modes and high-order Laguerre–Gaussian modes associated with a distinct spectrum. The coexistence of two sets of identical low-order Hermite–Gaussian modes with different spot sizes reveals the presence of two cavity configurations. The data on mode evolution and spot size variation reveal that the modes with larger spots are supported by the cavity with the carrier-induced aperture, and become the dominant modes above the laser threshold; the modes associated with smaller spots are considered to have been formed by the cavity with the oxidized aperture and are suppressed above the threshold.
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42.55.Px Semiconductor lasers; laser diodes

Growth and two-color holographic storage properties of Mn-doped lithium niobate crystals with varying Li∕Nb ratio

Youwen Liu, Kenji Kitamura, Ganesan Ravi, Shunji Takekawa, Masaru Nakamura, and Hideki Hatano

J. Appl. Phys. 96, 5996 (2004); http://dx.doi.org/10.1063/1.1812824 (6 pages) | Cited 6 times

Online Publication Date: 22 November 2004

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Near-stoichiometric LiNbO3 crystals slightly doped with Mn from melts with different compositions are grown by the top seeded solution growth method. The growth parameters such as temperature field, pulling, and rotation rates are optimized. Two-color holograms are recorded in these crystals by the use of a near infrared laser of 778 nm for writing and an ultraviolet laser of 350 nm for gating. The light-induced absorption changes and two-color holographic characteristic performances are presented and compared. The results show that crystals with composition closer to stoichiometry exhibit better two-color holographic storage performance.
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42.70.Ln Holographic recording materials; optical storage media
42.79.Vb Optical storage systems, optical disks
81.10.Dn Growth from solutions
61.66.Bi Elemental solids
61.66.Dk Alloys
78.40.Ha Other nonmetallic inorganics
78.30.Hv Other nonmetallic inorganics

Optical-injection-induced polarization switching in polarization-bistable vertical-cavity surface-emitting lasers

B. S. Ryvkin, K. Panajotov, E. A. Avrutin, I. Veretennicoff, and H. Thienpont

J. Appl. Phys. 96, 6002 (2004); http://dx.doi.org/10.1063/1.1807519 (6 pages) | Cited 18 times

Online Publication Date: 22 November 2004

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We present a simple quasianalytical formalism for static polarization-resolved light-current characteristics of dual polarization mode vertical-cavity surface-emitting lasers (VCSELs) under optical injection. Dynamics of optical-injection-induced polarization switching are analyzed and simple analytical estimates for the polarization switching time obtained in particular cases. The results suggest the possibility of ultrafast polarization switching, implying that optical-injection-induced polarization switching in VCSELs can operate as a fast flip-flop operation.
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42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.65.Pc Optical bistability, multistability, and switching, including local field effects
42.25.Ja Polarization

Modeling and analysis of high-speed electro-optic modulation in high confinement silicon waveguides using metal-oxide-semiconductor configuration

C. A. Barrios and M. Lipson

J. Appl. Phys. 96, 6008 (2004); http://dx.doi.org/10.1063/1.1814791 (8 pages) | Cited 30 times

Online Publication Date: 22 November 2004

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We analyze the electrical and optical properties of a silicon electro-optic waveguide modulator using a metal-oxide-semiconductor (MOS) configuration. The device performance is studied under different modes of operation of the MOS diode and gate oxide thicknesses. Our calculations indicate that this scheme can be used for achieving high-speed submicron waveguide active devices on silicon on insulator. A microring resonator intensity modulator is predicted to exhibit switching times on the order of tens of picoseconds with modulation depth of 73% by employing a bias voltage of only 5 V.
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84.40.Az Waveguides, transmission lines, striplines
85.30.De Semiconductor-device characterization, design, and modeling
85.85.+j Micro- and nano-electromechanical systems (MEMS/NEMS) and devices
84.30.Qi Modulators and demodulators; discriminators, comparators, mixers, limiters, and compressors
78.20.Jq Electro-optical effects

Improvement of coupling-out efficiency in organic electroluminescent devices by addition of a diffusive layer

Toshitaka Nakamura, Naoto Tsutsumi, Noriyuki Juni, and Hironaka Fujii

J. Appl. Phys. 96, 6016 (2004); http://dx.doi.org/10.1063/1.1810196 (7 pages) | Cited 22 times

Online Publication Date: 22 November 2004

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We demonstrated that the diffusive layer laminated to glass substrate surface increased the light output of organic electroluminescent devices by extracting and reemitting light trapped in the substrate of such devices. Lamination of the diffusive layer improved the efficiency of the coupling-out factor, which was also changed by the thickness of the electron transporting layer (ETL). High total emitting flux for the sample with ETL thickness around quarter wavelength optical thickness (QWOT) was not improved significantly by lamination of the diffusive layer. Conversely, low total emitting flux for the sample with ETL thickness around 2QWOT without the diffusive layer was largely increased by the lamination of the diffusive layer, which was due to the extraction of waveguided light from the substrate mode. As the results, large dependence of total emitting flux on ETL thickness was significantly minimized by the lamination of diffusive layer. In addition, lamination of the diffusive layer also significantly reduced the variation of emission color and luminous intensity, which were strongly dependent on viewing angle and ETL thickness for the sample without the diffusive layer.
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85.60.Jb Light-emitting devices
78.66.Qn Polymers; organic compounds
78.60.Fi Electroluminescence

Large-angle magnetization dynamics investigated by vector-resolved magnetization-induced optical second-harmonic generation

Th. Gerrits, T. J. Silva, J. P. Nibarger, and Th. Rasing

J. Appl. Phys. 96, 6023 (2004); http://dx.doi.org/10.1063/1.1811783 (6 pages) | Cited 10 times

Online Publication Date: 22 November 2004

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We examine the relationship between nonlinear magnetic responses and the change in the Gilbert damping parameter α for patterned and unpatterned thin Permalloy films when subjected to pulsed magnetic fields. An improved magnetization-vector-resolved technique utilizing magnetization-induced optical second-harmonic generation was used to measure magnetization dynamics after pulsed-field excitation. The magnetization excitations were achieved with pulsed fields aligned parallel to the hard axis of thin permalloy (Ni80Fe20) films while a dc bias field is applied along the easy axis. At low bias fields, α was inversely related to the bias field, but there was no significant reduction in the absolute value of the magnetization, as might be expected if there was significant spin-wave generation during the damping process. We discuss the discrepancies between data obtained by ferromagnetic resonance, whereby spin-wave generation is prevalent, and pulsed-field studies, with the conclusion that fundamental differences between the two techniques for the excitation of the ferromagnetic spin system might explain the different proclivities toward spin-wave generation manifest in these two experimental methods.
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75.50.Bb Fe and its alloys
75.60.Ej Magnetization curves, hysteresis, Barkhausen and related effects
76.50.+g Ferromagnetic, antiferromagnetic, and ferrimagnetic resonances; spin-wave resonance
75.70.Ak Magnetic properties of monolayers and thin films
75.30.Ds Spin waves
75.40.Gb Dynamic properties (dynamic susceptibility, spin waves, spin diffusion, dynamic scaling, etc.)
42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation

Propagation characteristics of surface-plasmon waveguides operating in the mid- and far infrared: Nonperturbative approach

W. Zietkowski and M. Załużny

J. Appl. Phys. 96, 6029 (2004); http://dx.doi.org/10.1063/1.1812600 (10 pages) | Cited 1 time

Online Publication Date: 22 November 2004

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The modal propagation characteristics of metal surface-plasmon waveguides (MSPWs) containing n-doped multiple quantum wells with normal and inverted subband occupation are studied theoretically. “Ordinary” (“enhanced”) waveguides modeled by simple three (four) media structures are considered. The appropriate dispersion equations are derived employing the transfer-matrix approach and solved numerically. Analytical solutions are also obtained employing the thin-layer approximation. Special attention is paid to the role of the coupling between the modes guided by passive MSPWs and the intersubband plasmon. The obtained results indicate that modification of the propagation characteristics induced by the above-mentioned coupling plays a very important role. We show that the commonly used perturbed approach based on the concept of the confinement factor has a restricted range of applicability, particularly in the case of the ordinary MSPWs.
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42.79.Gn Optical waveguides and couplers
42.55.Px Semiconductor lasers; laser diodes
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Ion species and electron behavior in capacitively coupled Ar and O2 plasma

Hyungtak Seo, Jung-Hyung Kim, Yong-Hyeon Shin, and Kwang-Hwa Chung

J. Appl. Phys. 96, 6039 (2004); http://dx.doi.org/10.1063/1.1809253 (6 pages) | Cited 7 times

Online Publication Date: 22 November 2004

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We investigated the change in electron density using the plasma frequency by the wave cutoff method, and the behavior of ion species with a quadrupole mass spectrometer (QMS) in pure Ar and O2 and mixed O2∕Ar plasmas. The change in electron and ion density in pure Ar and O2 plasmas was evaluated while varying such process conditions as rf power and pressure. We found that electron density in a pure Ar and O2 discharge is closely correlated to loss and generation of ions. The electron densities in both pure Ar and O2 plasmas increase with rf plasma power but show different dependence on pressure due to different loss mechanism for each type of gas. The addition of Ar to an O2 plasma significantly enhances the electron density due to the rapid increase of Ar+ ions regardless of the pressure. Also, Ar addition results in more dissociation of O2, which gives more atomic O. These results indicate that the electron density calculated from the plasma frequency, measured by the wave cutoff method, is well explained by the ion behavior, as characterized by QMS.
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52.25.Jm Ionization of plasmas
52.80.Pi High-frequency and RF discharges

Numerical simulation of metal plasma-immersion ion implantation and deposition on a cone

Christophe Cornet, Dixon T. K. Kwok, M. M. M. Bilek, and D. R. McKenzie

J. Appl. Phys. 96, 6045 (2004); http://dx.doi.org/10.1063/1.1808919 (8 pages) | Cited 5 times

Online Publication Date: 22 November 2004

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A two-dimensional particle-in-cell simulation in r-z cylindrical co-ordinates is used to model metal plasma-immersion ion implantation and deposition on a cone. We show that a sharp cone mounted on a plane or stage exhibits an ion-focusing effect, such that an increased ion dose at the sides of conical features will occur during the application of high negative voltage plasma-immersion ion implantation pulses. This focusing effect is due to the shape of the equilibrium sheath and is strongly enhanced by sharper cones. The focusing effect increases for sharper cones and the ion trajectories bend more sharply. However, this deflection of the trajectories is not strong enough to direct the ions normal to the cone surface. Consequently, sharper cones exhibit a more oblique incident angle for the implanted ions.
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52.77.Dq Plasma-based ion implantation and deposition
52.65.Cc Particle orbit and trajectory
52.40.Kh Plasma sheaths
52.25.-b Plasma properties

Effects of micro- and macro-plasma-sheath electric fields on carbon nanotube growth in a cross-field radio-frequency discharge

R. Hatakeyama, G.-H. Jeong, T. Kato, and T. Hirata

J. Appl. Phys. 96, 6053 (2004); http://dx.doi.org/10.1063/1.1809777 (8 pages) | Cited 10 times

Online Publication Date: 22 November 2004

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Effects of magnetic-field introduction and micro∕macroelectric fields in a plasma sheath on the carbon nanotube growth are investigated by employing a cylindrical magnetron-type radio-frequency (rf) plasma-enhanced chemical-vapor deposition method. The cross-field magnetic-field application is accompanied by the high-density plasma generation and the reduction of direct impinge of high-energy ions to a rf electrode substrate, achieving the carbon nanotube formation without harmful sputtering phenomenon. It is found that microelectric fields in the plasma sheath are useful in the sense of substrate pretreatment and macroelectric fields have to be optimized in order to obtain well-aligned and refined nanotube structures in a large area. These experimental results lead to putting into practice of quite simple methods for the site-selected carbon nanotube growth in a relatively large area, so-called substrate-scratching method and mesh-masking method.
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81.07.De Nanotubes
52.40.Kh Plasma sheaths
52.77.Dq Plasma-based ion implantation and deposition
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
61.46.-w Structure of nanoscale materials
52.25.-b Plasma properties
52.80.Pi High-frequency and RF discharges

Explosion of thin aluminum foils in air

R. Baksht, A. Pokryvailo, Y. Yankelevich, and I. Ziv

J. Appl. Phys. 96, 6061 (2004); http://dx.doi.org/10.1063/1.1808482 (5 pages) | Cited 6 times

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An inductive-based power supply (240 μH, 50 kA) was used for the investigation of the foil explosion process in the time range of 0.05 ms<texpl<0.2 ms. The foil current for these experiments was set between 10 kA and 27 kA. The foil thickness was 10 μm and its length was 5 cm. Images of the exploding foil captured by a fast framing camera show that the radiation of the exploding foil discharge starts on the voltage rise. The peak voltage Vpeak decreases with an increasing time to explosion and a decreasing current density: Vpeak=2.8 kV at j=9.1 MA∕cm2 and Vpeak=1.75 kV at j=5.3 MA∕cm2. A phenomenological model was suggested for the experimental data interpretations. Contrary to the previous model, we assume that the breakdown initiates with cathode spots instead of a breakdown by a bulk discharge. We suggest that the plasma appearance is related to the ejection of a metal vapor during the metal boiling. The high temperature of the vapor permits ignition of the cathode spots even at a low electric field. It results in the arcing in the metal vapor and bypassing the liquid pieces of the foil.
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52.80.Qj Explosions; exploding wires
52.80.Mg Arcs; sparks; lightning; atmospheric electricity
52.59.Qy Wire array Z-pinches
52.25.Fi Transport properties
52.25.Os Emission, absorption, and scattering of electromagnetic radiation
52.50.Lp Plasma production and heating by shock waves and compression

Simulation of ion generation and breakdown in atmospheric air

W. Zhang, T. S. Fisher, and S. V. Garimella

J. Appl. Phys. 96, 6066 (2004); http://dx.doi.org/10.1063/1.1806264 (7 pages) | Cited 19 times

Online Publication Date: 22 November 2004

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Understanding of ion generation in air provides insights to several applications, such as gas sensors, electrohydrodynamic pumping, and air purification. In this paper, ion generation processes in atmospheric air are simulated using a particle-in-cell and Monte Carlo method with emphasis on the prediction of ion generation and breakdown characteristics in microscale gaps. The simulation results are validated through comparison to Townsend’s discharge theory and experiments. The significance of each relevant electron-molecule reaction is characterized to improve understanding of ion generation dynamics. Self-sustaining discharge and ionization are predicted under sufficient voltage bias, and the predicted trends of breakdown voltage are similar to those obtained from Paschen’s curve. Corrections to Paschen’s curve in microscale gaps also are identified and compare well to experiments. Electron field emission produces stable electron current that suggests a controllable ionization device without external electron injection sources.
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52.80.Dy Low-field and Townsend discharges
52.65.Pp Monte Carlo methods

Fluid modeling of electron heating in low-pressure, high-frequency capacitively coupled plasma discharges

Guangye Chen and Laxminarayan L. Raja

J. Appl. Phys. 96, 6073 (2004); http://dx.doi.org/10.1063/1.1818354 (9 pages) | Cited 10 times

Online Publication Date: 22 November 2004

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Fluid modeling approaches encounter several shortcomings when used for simulation of capacitively coupled plasma discharges, especially under low-pressure and high-frequency conditions. For example, fluid models fail to accurately predict important features such as the collisionless electron heating and the electron temperature profiles in these discharges. We improve the classical fluid modeling approach to include the full electron momentum equation instead of the approximate drift-diffusion and a nonlocal collisionless electron heat flux terms instead of the Fourier heat flux form. A one-dimensional form of the fluid model is used in our studies. Improved predictions of the collisionless electron heating effect, charged species densities, and sheath electron temperature profiles are shown. Also accurate prediction of discharge impedance characteristics in the low-pressure, high-frequency regime are demonstrated.
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52.65.-y Plasma simulation
52.50.Qt Plasma heating by radio-frequency fields; ICR, ICP, helicons
52.40.Kh Plasma sheaths
52.80.Pi High-frequency and RF discharges
52.30.Ex Two-fluid and multi-fluid plasmas
52.25.Kn Thermodynamics of plasmas
52.25.Jm Ionization of plasmas

Analysis for discharge-radiation dynamics in alternating current plasma display panels

Keizo Suzuki, Kenichi Yamamoto, Hiroshi Kajiyama, Shirun Ho, Norihiro Uemura, and Katsunori Muraoka

J. Appl. Phys. 96, 6082 (2004); http://dx.doi.org/10.1063/1.1814416 (12 pages) | Cited 3 times

Online Publication Date: 22 November 2004

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An analytical method to study the discharge-radiation dynamics (DRD) in alternating current plasma display panels was developed. The input parameters for this DRD analysis were experimentally determined panel voltage and current wave forms. Discharge voltage, current, and power wave forms in the discharge volume of a cell were first obtained from the measured panel voltage and current wave forms using known geometrical configurations and electric circuit calculations. Intrinsic discharge parameters, such as electron temperature and density, were then determined to satisfy these discharge wave forms under the assumption of a hydrodynamic approach. A one-dimensional discharge structure with two regions (cathode fall and positive column) and several other assumptions which are plausible from the discharge physics point of view were also adopted. These assumptions took account of known cross sections and energies of electron-impact excitation and ionization of discharge gas atoms, and a secondary electron emission coefficient of the dielectric surface at the cathode side induced by ion bombardment. Radiation intensities from the discharge were calculated using the determined intrinsic discharge parameters, and the results were compared with those measured for the respective panel conditions used in the calculations, yielding a fair agreement. The luminous efficiency, defined as the radiation intensity divided by the discharge power, was also determined using the intrinsic discharge parameters. Discussion on the luminous efficiency change for different panel operating conditions revealed that the efficiency improvement at a lower voltage was attributable to a lower electron temperature for this condition.
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52.75.-d Plasma devices
52.65.-y Plasma simulation
52.25.-b Plasma properties
85.60.Pg Display systems

Analysis of nitrogen plasma generated by a pulsed plasma system near atmospheric pressure

R. Hayakawa, T. Yoshimura, A. Ashida, N. Fujimura, H. Kitahata, and M. Yuasa

J. Appl. Phys. 96, 6094 (2004); http://dx.doi.org/10.1063/1.1810202 (3 pages) | Cited 8 times

Online Publication Date: 22 November 2004

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Stable discharging of pure nitrogen can be maintained even at atmospheric pressure when alternative pulsed voltage is applied between two parallel plate electrodes. We evaluated the nitrogen plasma generated by an alternative pulsed voltage system. The excited nitrogen species in a pure nitrogen plasma was evaluated using optical emission spectroscopy. In the discharging space, the largest peak detected corresponded to the N2 second positive system. Additionally, the emission peaks from the excited nitrogen atom were detected at a pressure of as high as 45 Torr. In the downstream space, we detected emission peaks from the N2 Herman’s infrared system as well as the N2 second positive system. The N2 (A 3Σu+) state is considered to be the origin of the N2 Herman’s infrared system. The emission intensities from the N2 second positive system and the N2 Herman’s infrared system increase with increasing nitrogen gas pressure, whereas the emission intensity from the N2+ first negative system decreases.
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52.50.-b Plasma production and heating
52.80.-s Electric discharges
52.70.Kz Optical (ultraviolet, visible, infrared) measurements
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High-resolution observation by double-biprism electron holography

Ken Harada, Akira Tonomura, Tsuyoshi Matsuda, Tetsuya Akashi, and Yoshihiko Togawa

J. Appl. Phys. 96, 6097 (2004); http://dx.doi.org/10.1063/1.1803105 (6 pages) | Cited 4 times

Online Publication Date: 22 November 2004

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High-resolution electron holography has been achieved by using a double-biprism interferometer implemented on a 1 MV field emission electron microscope. The interferometer was installed behind the first magnifying lens to narrow carrier fringes and thus enabled complete separation of sideband Fourier spectrum from center band in reconstruction process. Holograms of Au fine particles and single-crystalline thin films with the finest fringe spacing of 4.2 pm were recorded and reconstructed. The overall holography system including the reconstruction process performed well for holograms in which carrier fringes had a spacing of around 10 pm. High-resolution lattice images of the amplitude and phase were clearly reconstructed without mixing of the center band and sideband information. Additionally, entire holograms were recorded without Fresnel fringes normally generated by the filament electrode of the biprism, and the holograms were thus reconstructed without the artifacts caused by Fresnel fringes.
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42.40.Kw Holographic interferometry; other holographic techniques
78.30.Er Solid metals and alloys
42.30.Wb Image reconstruction; tomography
41.85.-p Beam optics

Microstructure of epitaxial MnAs films on GaAs(001): An in situ x-ray study

B. Jenichen, D. Satapathy, W. Braun, L. Däweritz, and K. H. Ploog

J. Appl. Phys. 96, 6103 (2004); http://dx.doi.org/10.1063/1.1804621 (6 pages) | Cited 7 times

Online Publication Date: 22 November 2004

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We present an analysis of thin MnAs films on GaAs(001) by the x-ray grazing incidence diffraction during molecular-beam epitaxy and immediately after deposition near the growth temperature. Separate MnAs peaks are detected for average thicknesses starting from ≈1 monolayer, indicating the formation of a relaxed MnAs lattice. The variation of the position and shape of the MnAs peaks during growth yields the time dependence of relaxation and island sizes. The MnAs domains of different orientations are detected and their amount is analyzed quantitatively. A line broadening due to the size and strain effects is observed. Both the effects are separated for each of the main directions along the interface. The lateral domain sizes of 10–40 nm and strain values of 0.2%–0.6% are found in the MnAs films. We find that the positions of the misfit dislocations at the interface are correlated.
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68.55.A- Nucleation and growth
81.05.Hd Other semiconductors
68.55.-a Thin film structure and morphology
75.70.Kw Domain structure (including magnetic bubbles and vortices)
68.35.B- Structure of clean surfaces (and surface reconstruction)
61.72.Hh Indirect evidence of dislocations and other defects (resistivity, slip, creep, strains, internal friction, EPR, NMR, etc.)
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
75.50.Pp Magnetic semiconductors

Response time analysis of SiGe∕Si modulation-doped multiple-quantum-well structures for optical modulation

Delphine Marris, Eric Cassan, and Laurent Vivien

J. Appl. Phys. 96, 6109 (2004); http://dx.doi.org/10.1063/1.1806995 (4 pages) | Cited 10 times

Online Publication Date: 22 November 2004

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The response time of SiGe∕Si modulation-doped multiple-quantum-well modulators is investigated. A refractive index variation is achieved by the depletion of the free carriers initially present in the wells. Both the tunneling and thermionic emissions are taken into account to study the time needed for the free carriers to escape from and to be captured into the wells. Results are presented for an optimized three-Si0.8Ge0.2-quantum-well (QW) (10-nm-thick) device. Such a QW structure can intrinsically reach an operation frequency around 13 GHz.
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42.79.Hp Optical processors, correlators, and modulators
85.35.Be Quantum well devices (quantum dots, quantum wires, etc.)
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
79.40.+z Thermionic emission
73.40.Gk Tunneling

Atomic scale characterization of HfO2∕Al2O3 thin films grown on nitrided and oxidized Si substrates

T. Nishimura, T. Okazawa, Y. Hoshino, Y. Kido, K. Iwamoto, K. Tominaga, T. Nabatame, T. Yasuda, and A. Toriumi

J. Appl. Phys. 96, 6113 (2004); http://dx.doi.org/10.1063/1.1808245 (7 pages) | Cited 6 times

Online Publication Date: 22 November 2004

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One and three bilayers of HfO2(9 math)∕Al2O3(3 math) thin films were grown by atomic layer chemical-vapor deposition on Si(001) substrates whose surfaces were nitrided or oxidized. The films as-grown and postannealed in an ultrahigh vacuum were analyzed by atomic force microscopy, photoelectron spectroscopy, and medium energy ion scattering. For the one- and three-bilayer films grown on the nitrided Si substrates, the HfO2 and Al2O3 layers are mixed to form Hf aluminates at temperatures above 600 °C. The mixed Hf aluminate layer is partly decomposed into HfO2 and Al2O3 grains and Al2O3 segregates to the surface by postannealing at 900 °C. Complete decomposition takes place at 1000 °C and the surface is covered with Al2O3. The surfaces are uniform and almost flat up to 900 °C but are considerably roughened at 1000 °C due to the complete decomposition of the Hf aluminate layer. In contrast, for one- bilayer films stacked on the oxidized Si substrates, Hf silicate layers, including Hf aluminate, are formed by annealing at 600–800 °C. At temperatures above 900 °C, HfSi2 grows and Al oxide escapes from the surface.
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77.84.Bw Elements, oxides, nitrides, borides, carbides, chalcogenides, etc.
68.55.A- Nucleation and growth
68.55.-a Thin film structure and morphology
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
79.60.Dp Adsorbed layers and thin films
68.35.B- Structure of clean surfaces (and surface reconstruction)
81.40.Gh Other heat and thermomechanical treatments
79.20.Rf Atomic, molecular, and ion beam impact and interactions with surfaces
68.37.Xy Scanning Auger microscopy, photoelectron microscopy
68.37.Ps Atomic force microscopy (AFM)
77.55.-g Dielectric thin films
68.35.Dv Composition, segregation; defects and impurities
64.75.-g Phase equilibria
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
79.60.Bm Clean metal, semiconductor, and insulator surfaces

Mechanism of low-temperature θ-CuGa2 phase formation in Cu-Ga alloys by mechanical alloying

Soon-Jik Hong and C. Suryanarayana

J. Appl. Phys. 96, 6120 (2004); http://dx.doi.org/10.1063/1.1808243 (7 pages) | Cited 3 times

Online Publication Date: 22 November 2004

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The mechanism on the formation of the θ-CuGa2 phase in binary Cu–Ga alloys has been investigated through mechanical alloying (MA) of blended elemental powders by varying process variables such as milling time and milling temperature. The particle size distribution was very broad at the beginning of milling but became narrower as the milling time increased and steady-state equilibrium was reached. The average powder particle size reached a peak value of 270 μm at 30 min of milling and then continued to decrease gradually to 6 μm on milling for 20 h. Formation of the θ-CuGa2 phase started to occur even after milling for 2 min and was completed after 1 h of milling. Melting of Ga was noted in the early stages of milling, probably due to the rise in powder temperature. To discount the possibility that the melting of Ga was responsible for the θ-phase formation, milling was conducted at lower temperatures by dripping liquid nitrogen on to the container. The θ-phase still formed, suggesting that its formation was not related to the melting of Ga and that it was formed by a solid-state reaction even at low temperatures. The compositional homogeneity range of the θ-phase was also extended under the MA conditions. Details of the mechanism of phase formation, as observed by x-ray diffraction and scanning electron microscopy methods, are presented.
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81.20.Ev Powder processing: powder metallurgy, compaction, sintering, mechanical alloying, and granulation
64.70.D- Solid-liquid transitions

Effect of the magnetic field on the melting transition of H2O and D2O measured by a high resolution and supersensitive differential scanning calorimeter

Hideaki Inaba, Tetsuya Saitou, Ken-ichi Tozaki, and Hideko Hayashi

J. Appl. Phys. 96, 6127 (2004); http://dx.doi.org/10.1063/1.1803922 (6 pages) | Cited 16 times

Online Publication Date: 22 November 2004

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The magnetic effect on the melting transition of H2O and D2O was measured by using a high resolution and supersensitive differential scanning calorimeter working in a magnetic bore. The melting temperature of H2O and D2O at 6 T was 5.6 and 21.8 mK higher than that without the magnetic field, respectively. The temperature shifts of the melting transition of H2O and D2O were proportional to the square of the magnetic field. The temperature shifts of the melting transition due to the magnetic field did not obey the magneto-Clapeyron equation quantitatively. A dynamic effect due to the magnetic field was discussed for an alternative interpretation.
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64.70.D- Solid-liquid transitions
75.40.Gb Dynamic properties (dynamic susceptibility, spin waves, spin diffusion, dynamic scaling, etc.)
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