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Journal of Applied Physics / Volume 95 / Issue 3 / COMMUNICATIONS

J. Appl. Phys. 95, 1609 (2004); http://dx.doi.org/10.1063/1.1637721 (3 pages)

Polarization spectroscopy of InGaAs/GaAs quantum wires grown on (331)B GaAs templates with nanoscale fluctuations

X. Y. Wang, Z. M. Wang, V. R. Yazdanpanah, G. J. Salamo, and Min Xiao

Department of Physics, University of Arkansas, Fayetteville, Arkansas 72701

(Received 5 November 2003; accepted 10 November 2003)

Using (331)B GaAs templates with nanoscale fluctuations, we have fabricated InGaAs/GaAs quantum wires (QWRs) with a density of ∼2.0×106 cm−1 and the degree of polarization as high as ∼28%. In the samples with weak lateral confinement, we observed thermal delocalization of carriers from the one-dimensional QWR states to the two-dimensional quantum-well states with increasing temperature, which is almost absent in QWR samples with strong lateral confinement. © 2004 American Institute of Physics.

© 2004 American Institute of Physics

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KEYWORDS and PACS

Keywords

indium compounds, gallium arsenide, III-V semiconductors, semiconductor quantum wires, semiconductor growth, molecular beam epitaxial growth, photoluminescence, light polarisation, interface states

PACS

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.1637721

PUBLICATION DATA

ISSN

0021-8979 (print)  
1089-7550 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

For access to fully linked references, you need to log in.
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    V. R. Yazdanpanah, Z. M. Wang, and G. J. Salamo, Appl. Phys. Lett. 82, 1766 (2003)APPLAB000082000011001766000001.

    F. W. Yan, W. J. Zhang, R. G. Zhang, L. Q. Cui, C. G. Liang, and S. Y. Liu, J. Appl. Phys. 90, 1403 (2001)JAPIAU000090000003001403000001.

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