jap banner
  • Volume/Page
  • Keyword
  • DOI
  • Citation
  • Advanced
   
 
 
 

Flickr Twitter iResearch App Facebook

BROWSE VOLUMES

Year Range: 
Search Issue | RSS Feeds RSS
Previous Issue Next Issue

15 May 2004

Volume 95, Issue 10, pp. 5267-5935

Return to All Sections
back to top
RSS Feeds
FREE

Erratum: Modeling of the magnetomechanical effect: Application of the Rayleigh law to the stress domain [J. Appl. Phys. 93, 8480 (2003)]

L. Li and D. C. Jiles

J. Appl. Phys. 95, 5934 (2004); http://dx.doi.org/10.1063/1.1688987 (1 page)

Online Publication Date: 6 May 2004

Full Text: Read Online (HTML) | Download PDF

Abstract Unavailable
Show PACS
99.10.Cd Errata
75.80.+q Magnetomechanical effects, magnetostriction
FREE

Publisher’s Note: “Influence of growth rate on charge transport in GaSb homojunctions prepared by metalorganic vapor phase epitaxy” [J. Appl. Phys. 95, 1811 (2004)]

Dobroslav Kindl, Jana Toušková, Eduard Hulicius, Jiří Pangrác, Tomislav Šimeček, Vlastimil Jurka, Pavel Hubík, Jiří J. Mareš, and Jozef Krištofik

J. Appl. Phys. 95, 5935 (2004); http://dx.doi.org/10.1063/1.1699342 (1 page)

Online Publication Date: 6 May 2004

Full Text: Read Online (HTML) | Download PDF

Abstract Unavailable
Show PACS
99.10.Fg Publisher's note
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
Return to All Sections
Close

Google Calendar

ADVERTISEMENT

Go to AIP Home   © AIP Publishing LLC
close