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Journal of Applied Physics / Volume 94 / Issue 5 / ELECTRONIC STRUCTURE AND TRANSPORT (PACS 71-73)

J. Appl. Phys. 94, 3271 (2003); http://dx.doi.org/10.1063/1.1589601 (7 pages)

Terahertz magnetospectroscopy of transient plasmas in semiconductors

M. A. Zudov1, A. P. Mitchell2, A. H. Chin2, and J. Kono1

1Department of Electrical and Computer Engineering, Rice Quantum Institute and Center for Nanoscale Science and Technology, Rice University, Houston, Texas 77005
2W. W. Hansen Experimental Physics Laboratory, Stanford University, Stanford, California 94305

(Received 18 February 2003; accepted 16 May 2003)

Using synchronized near-infrared (NIR) and terahertz (THz) lasers, we have performed picosecond time-resolved THz spectroscopy of transient carriers in semiconductors. Specifically, we measured the temporal evolution of THz transmission and reflectivity after NIR excitation. We systematically investigated transient carrier relaxation in GaAs and InSb with varying NIR intensities and magnetic fields. Using this information, we were able to determine the evolution of the THz absorption to study the dynamics of photocreated carriers. We developed a theory based on a Drude conductivity with time-dependent density and density-dependent scattering lifetime, which reproduced the observed plasma dynamics. Detailed comparison between experimental and theoretical results revealed a linear dependence of the scattering frequency on density, which suggests that electron–electron scattering is the dominant scattering mechanism for determining the scattering time. In InSb, plasma dynamics was dramatically modified by the application of a magnetic field, showing rich magnetoreflection spectra, while GaAs did not show any significant magnetic field dependence. We attribute this to the small effective masses of the carriers in InSb compared to GaAs, which made the plasma, cyclotron, and photon energies all comparable in the density, magnetic field, and wavelength ranges of the current study. © 2003 American Institute of Physics.

© 2003 American Institute of Physics

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KEYWORDS and PACS

Keywords

semiconductor plasma, time resolved spectra, submillimetre wave spectra, magnetoreflectance, carrier relaxation time, gallium arsenide, indium compounds, III-V semiconductors, carrier lifetime

PACS

  • 72.30.+q

    High-frequency effects; plasma effects

  • 78.70.Gq

    Microwave and radio-frequency interactions

  • 78.47.-p

    Spectroscopy of solid state dynamics

  • 78.20.Ls

    Magneto-optical effects

  • 72.20.Jv

    Charge carriers: generation, recombination, lifetime, and trapping

  • 72.80.Ey

    III-V and II-VI semiconductors

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.1589601

PUBLICATION DATA

ISSN

0021-8979 (print)  
1089-7550 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

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