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1 Mar 2003

Volume 93, Issue 5, pp. 2317-3127

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Orientation and direct current field dependent dielectric properties of bulk single crystal SrTiO3 at microwave frequencies

A. Eriksson, A. Deleniv, and S. Gevorgian

J. Appl. Phys. 93, 2848 (2003); http://dx.doi.org/10.1063/1.1536014 (7 pages) | Cited 7 times

Online Publication Date: 4 March 2003

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The dielectric properties of bulk single crystal SrTiO3 (STO) are studied in the temperature range 30–300 K, under dc field 0–10 kV/cm at 1.0 kHz and in the frequency range 0.3–2.0 GHz. Two sets of circular disk shaped parallel plate resonators have been fabricated and tested experimentally. In the first set thin YBa2Cu3O7 films have been epitaxially grown on both surfaces of [100] STO disks. In the second set, three crystal orientations of SrTiO3 [100], [110], and [111] have been used to make parallel-plate resonators with evaporated Cu/Ti electrodes. No peculiarities in field dependent dielectric permittivity are detected for STO with smaller densities of impurities. For samples with larger impurity densities double loop hysteresis is observed in the dc field dependent permittivity. For all orientations the losses are minimum at temperatures about 50–55 K. The losses at microwave frequencies increase with the applied dc field regardless of the orientation of the STO crystal. At relatively high dc fields (depending on the temperature) the losses start decreasing slightly. © 2003 American Institute of Physics.
Show PACS
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.22.Ch Permittivity (dielectric function)
77.22.Gm Dielectric loss and relaxation
77.80.Dj Domain structure; hysteresis
84.40.-x Radiowave and microwave (including millimeter wave) technology

Combined effect of thickness and stress on ferroelectric behavior of thin BaTiO3 films

G-F. Huang and S. Berger

J. Appl. Phys. 93, 2855 (2003); http://dx.doi.org/10.1063/1.1540225 (6 pages) | Cited 22 times

Online Publication Date: 4 March 2003

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Thin BaTiO3 (BTO) layers were deposited by magnetron sputtering on a Si substrate between two thin LaNiO3 (LNO) electrodes (LNO/BTO/LNO/Si structure). The thickness of the BTO layer was varied between 35 nm and 1 μm. The stress, dielectric permittivity, and ferroelectric hysteresis loop were measured after deposition and during heating. It was found that the BTO layers are under tensile stress at the Curie temperature. The tensile stress increases with decreasing layer thickness leading to a shift of the Curie point to a lower temperature, a decrease of remanent polarization, and an increase of the coercive field. The effect of tensile stress on the Curie temperature is dominant within a restricted range of stresses between 300 and 450 mega Pascals (MPa), where the Curie temperature decreases linearly by about 0.16 °C/MPa. A good correlation was found between stress and dielectric measurements with respect to the temperature of the Curie point. The ferroelectric hysteresis loops showed that the ferroelectric-paraelectric phase transition starts at the Curie temperature of the BTO layer and continues within a range of temperatures until about the Curie temperature of the bulk BTO material. The ferroelectric behavior indicates dominance of domains within the interior part of the BTO layer and minor contribution of surface domains. The results are compared with a theoretical approach of size-driven phase transition in stress-induced ferroelectric thin films. © 2003 American Institute of Physics.
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77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.55.-g Dielectric thin films
68.60.Bs Mechanical and acoustical properties
77.80.B- Phase transitions and Curie point
77.22.Ch Permittivity (dielectric function)
77.80.Dj Domain structure; hysteresis
81.40.Gh Other heat and thermomechanical treatments
77.22.Ej Polarization and depolarization
81.40.Rs Electrical and magnetic properties related to treatment conditions

Simulation of nonlinear dielectric properties of polyvinylidene fluoride based on the Preisach model

C. H. Tsang and F. G. Shin

J. Appl. Phys. 93, 2861 (2003); http://dx.doi.org/10.1063/1.1524021 (5 pages) | Cited 5 times

Online Publication Date: 4 March 2003

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The nonlinear dielectric properties of a ferroelectric material were studied based on the concepts of the Preisach model. In this work, the ferroelectric polymer polyvinylidene fluoride was chosen as an example. The electric displacement D in the material when subjected to a sinusoidal electric field of a given frequency was calculated by use of the Preisach model. Both in-phase and out-of-phase components as well as higher harmonics emerged naturally from the model calculation. D-E loops at different field amplitudes were simulated and Fourier analyzed. The Fourier coefficients obtained were compared with the experimental data [T. Furukawa, K. Nakajima, T. Koizumi, and M. Date, Jpn. J. Appl. Phys., Part 1 26, 1039 (1987)]. Essentially, almost all the broad experimental features were reproduced by the simulations. This model is able to account for finer features than the theoretical model used in the original paper. © 2003 American Institute of Physics.
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77.84.Jd Polymers; organic compounds
77.80.Dj Domain structure; hysteresis
77.22.Ej Polarization and depolarization
77.80.Fm Switching phenomena

Remanent polarization of evaporated films of vinylidene fluoride oligomers

Kei Noda, Kenji Ishida, Atsushi Kubono, Toshihisa Horiuchi, Hirofumi Yamada, and Kazumi Matsushige

J. Appl. Phys. 93, 2866 (2003); http://dx.doi.org/10.1063/1.1540231 (5 pages) | Cited 38 times

Online Publication Date: 4 March 2003

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A remanent polarization of 130±3 mC/m2, large among the values reported for organic materials, and rectangular D–E hysteresis curves were realized in synthesized vinylidene fluoride (VDF) oligomer [CF3(CH2CF2)17I] film evaporated onto a platinum surface around liquid nitrogen temperature. The results suggested that the VDF oligomer film has an extremely high crystallinity, and the electric dipoles arrange almost perfectly perpendicular to the film surface, and that a Lorentz local field factor of ferroelectric VDF oligomer crystals is nearly zero. Moreover, the obtained value of the coercive field, which was larger than those of ferroelectric polymers, might be attributed to the steric hindrance arising from the existence of iodine atoms at the VDF oligomer chains. © 2003 American Institute of Physics.
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77.84.Jd Polymers; organic compounds
77.55.-g Dielectric thin films
77.22.Ej Polarization and depolarization
77.80.Dj Domain structure; hysteresis
68.55.-a Thin film structure and morphology
77.80.Fm Switching phenomena

Nonlinear alternating current response of colloidal suspension with an intrinsic dispersion

J. P. Huang, L. Gao, and K. W. Yu

J. Appl. Phys. 93, 2871 (2003); http://dx.doi.org/10.1063/1.1543637 (5 pages) | Cited 8 times

Online Publication Date: 4 March 2003

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When a sinusoidal (ac) field is applied to a suspension containing nonlinear dielectric particles, the electrical response will generally consist of ac fields at frequencies of the higher-order harmonics. The situation is further complicated by an intrinsic dielectric dispersion, which often occurs due to the surface conductivity or inhomogeneous structure of the particles. We develop a perturbation method to investigate the effect of intrinsic dielectric dispersion on the harmonics of local field as well as induced dipole moment. The results showed, for weak intrinsic dispersion strength, the ratio of the third to first harmonics of the induced dipole moment decreases as the frequency increases, which is qualitatively in agreement with experiment. However, for a strong dispersion strength, the harmonics ratio increases as the frequency increases. Moreover, an increase in the intrinsic relaxation time may increase the strength of the harmonics. © 2003 American Institute of Physics.
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77.22.Gm Dielectric loss and relaxation
77.22.Ej Polarization and depolarization
77.22.Ch Permittivity (dielectric function)
73.25.+i Surface conductivity and carrier phenomena

Low-temperature dielectric behavior of Nb2O5–SiO2 solid solutions

H. Choosuwan, R. Guo, A. S. Bhalla, and U. Balachandran

J. Appl. Phys. 93, 2876 (2003); http://dx.doi.org/10.1063/1.1545160 (4 pages) | Cited 3 times

Online Publication Date: 4 March 2003

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Dielectric properties of Nb2O5(0.92):SiO2(0.08) ceramic were measured in the temperature range of 10–300 K by the cryostat system. Frequency-dependent dielectric loss suggests the relaxation behavior of this material. The relaxation mechanism was analyzed by the Arrhenius relationship and the Cole–Cole plot. Calculated distribution of relaxation time reveals deviation from the pure Debye relaxation. © 2003 American Institute of Physics.
Show PACS
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.22.Gm Dielectric loss and relaxation
77.22.Ch Permittivity (dielectric function)

Low frequency polarization behavior of xBiScO3–yBiGaO3–(1−x−y)PbTiO3 piezocrystals

Shujun Zhang, Shashank Priya, Thomas R. Shrout, and Clive A. Randall

J. Appl. Phys. 93, 2880 (2003); http://dx.doi.org/10.1063/1.1542915 (4 pages) | Cited 5 times

Online Publication Date: 4 March 2003

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Perovskite ferroelectric xBiScO3–yBiGaO3–(1−x−y)PbTiO3 (BS–BG–PT) single crystals were successfully grown using the high temperature solution method. The dielectric constant (K) of tetragonal crystals at room temperature was determined to be 500–600 with dielectric loss tangents less than 0.3% at a frequency of ∼1 kHz. The Curie temperature Tc was found to be around ∼420 °C, with longitudinal piezoelectric coefficient of ∼300 pC/N for 〈001〉 oriented tetragonal crystals. The remnant polarization Pr was 46 μC/cm2 with a coercive field Ec of 43 kV/cm at 1 Hz and dc field of 60 kV/cm. Based on dielectric and polarization measurements, it was found that the low frequency regime was dominated by a space charge conduction mechanism. A space charge model is developed which correlates the polarization with the dielectric relaxation. The relaxation time on the order of ∼2.2 ms was obtained in the BS–BG–PT single crystal using this model. © 2003 American Institute of Physics.
Show PACS
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.65.Bn Piezoelectric and electrostrictive constants
77.22.Ej Polarization and depolarization
77.22.Jp Dielectric breakdown and space-charge effects
77.80.B- Phase transitions and Curie point
77.22.Ch Permittivity (dielectric function)
81.10.Dn Growth from solutions
77.22.Gm Dielectric loss and relaxation

Decay of space charge in conjugated polymers measured using pyroelectric current transients

F. Feller, D. Geschke, and A. P. Monkman

J. Appl. Phys. 93, 2884 (2003); http://dx.doi.org/10.1063/1.1539291 (6 pages) | Cited 7 times

Online Publication Date: 4 March 2003

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The decay of space charge in conjugated polymers due to detrapping from deep traps after the turn-off of an external bias has been investigated. We present an experiment for measuring time-resolved laser intensity modulation method spectrum with a resolution of about 1 s. For this pyroelectric current transients have been recorded at different temperatures from 220 to 360 K. The data have been analyzed, assuming detrapping of charge carriers from single energy trap levels to a Gaussian distribution of transport levels to be the predominating process of the space-charge decay. In poly[2-methoxy, 5-(2’-ethyl-hexyloxy)-p-phenylene-vinylene], we find hole trapping with a trap depth of Et=0.6 eV and a trap density Nt>2×1021 m−3. In poly(2,5-pyridinediyl) both electron and hole trapping are observed, and the analysis of the decays yield Et=0.55 eV and Nt>1021 m−3. No deep trapping could be observed in poly(9,9-dioctylfluorene), confirming the high chemical purity of this polymer. © 2003 American Institute of Physics.
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72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
72.80.Le Polymers; organic compounds (including organic semiconductors)
77.70.+a Pyroelectric and electrocaloric effects
77.22.Jp Dielectric breakdown and space-charge effects

Frequency and temperature dependence of the relative permittivity in ferroelectrics: Monte-Carlo simulation study

D. Bolten, U. Böttger, and R. Waser

J. Appl. Phys. 93, 2890 (2003); http://dx.doi.org/10.1063/1.1544649 (5 pages) | Cited 1 time

Online Publication Date: 4 March 2003

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In this article, the domain wall densities calculated from simulated domain configurations are used to estimate the domain wall contributions to the dielectric permittivity of a ferroelectric material. The configurations were calculated using a Monte-Carlo model proposed by B. G. Potter et al. [J. Appl. Phys. 87, 4415 (2000)]. The temperature and frequency dependence of the contributions are analyzed and compared to experimental results obtained on PbZrxTi1−xO3 thin films. © 2003 American Institute of Physics.
Show PACS
77.80.Dj Domain structure; hysteresis
77.22.Ch Permittivity (dielectric function)
02.70.Uu Applications of Monte Carlo methods

Dielectric study of water/methanol mixtures for use in pulsed-power water capacitors

Björn F. Bolund, Mats Berglund, and Hans Bernhoff

J. Appl. Phys. 93, 2895 (2003); http://dx.doi.org/10.1063/1.1544644 (5 pages) | Cited 4 times

Online Publication Date: 4 March 2003

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Large pulsed-power systems normally use a solid capacitive primary storage and a water capacitor for secondary storage. It is shown that the electrical breakdown strength is increased and the maximum storage time is enhanced from the microsecond level to the millisecond level when the water is replaced by a water/methanol mixture. The increased time scale in the second storage enables the use of an inductive primary storage. The mixing of methanol in the water decreases the relative permittivity. However, due to the increased electrical breakdown strength, a higher energy density is nevertheless possible. Previous work with water/ethylene glycol has manifested the problem of charge injection that occurs when energy is stored for millisecond time scales at high electrical stress. Water/methanol mixtures show less tendency for charge injection and a better ability to store energy at millisecond time scales. © 2003 American Institute of Physics.
Show PACS
84.70.+p High-current and high-voltage technology: power systems; power transmission lines and cables
84.60.Ve Energy storage systems, including capacitor banks
77.84.Nh Liquids, emulsions, and suspensions; liquid crystals
77.22.Jp Dielectric breakdown and space-charge effects
77.22.Ch Permittivity (dielectric function)
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