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1 Mar 2003

Volume 93, Issue 5, pp. 2317-3127

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Implant isolation of ZnO

S. O. Kucheyev, C. Jagadish, J. S. Williams, P. N. K. Deenapanray, Mitsuaki Yano, Kazuto Koike, Shigehiko Sasa, Masataka Inoue, and Ken-ichi Ogata

J. Appl. Phys. 93, 2972 (2003); http://dx.doi.org/10.1063/1.1542939 (5 pages) | Cited 34 times

Online Publication Date: 4 March 2003

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We study ion-irradiation-induced electrical isolation in n-type single-crystal ZnO epilayers. Emphasis is given to improving the thermal stability of isolation and obtaining a better understanding of the isolation mechanism. Results show that an increase in the dose of 2 MeV 16O ions (up to ∼2 orders of magnitude above the threshold isolation dose) and irradiation temperature (up to 350 °C) has a relatively minor effect on the thermal stability of electrical isolation, which is limited to temperatures of ∼300–400 °C. An analysis of the temperature dependence of sheet resistance suggests that effective levels associated with irradiation-produced defects are rather shallow (<50 meV). For the case of implantation with keV Cr, Fe, or Ni ions, the evolution of sheet resistance with annealing temperature is consistent with defect-induced isolation, with a relatively minor effect of Cr, Fe, or Ni impurities on the thermal stability of isolation. Results also reveal a negligible ion-beam flux effect in the case of irradiation with 2 MeV 16O ions, supporting high diffusivity of ion-beam-generated defects during ion irradiation and a very fast stabilization of collision cascade processes in ZnO. Based on these results, the mechanism for electrical isolation in ZnO by ion bombardment is discussed. © 2003 American Institute of Physics.
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61.72.up Other materials
61.80.Jh Ion radiation effects
61.82.Fk Semiconductors
61.72.Cc Kinetics of defect formation and annealing

High-mobility organic thin-film transistors based on α,α′-didecyloligothiophenes

Marcus Halik, Hagen Klauk, Ute Zschieschang, Günter Schmid, Wolfgang Radlik, Sergei Ponomarenko, Stephan Kirchmeyer, and Werner Weber

J. Appl. Phys. 93, 2977 (2003); http://dx.doi.org/10.1063/1.1543246 (5 pages) | Cited 44 times

Online Publication Date: 4 March 2003

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We have fabricated organic thin-film transistors and integrated circuits based on the small-molecule organic semiconductors α,α′-didecylquaterthiophene, α,α′-didecylquinquethiophene, and α,α′-didecylsexithiophene. The organic semiconductors were deposited by thermal evaporation, with solution-processed and cross linked poly-4-vinylphenol serving as the gate dielectric layer. We have found that bottom-contact devices based on these materials have better electrical performance than top-contact devices, presumably due to more efficient carrier injection from bottom contacts due to the presence of the relatively long alkyl chains substituted at the α- and ω-positions of the oligothiophene molecules. Bottom-contact transistors have carrier mobility as large as 0.5 cm2/V s and on/off current ratio as large as 105, and ring oscillators fabricated using bottom-contact transistors and α,α′-didecylsexithiophene as the organic active layer have signal propagation delay as low as 30 μs per stage. © 2003 American Institute of Physics.
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85.65.+h Molecular electronic devices
85.30.Tv Field effect devices
73.61.Ph Polymers; organic compounds
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