jap banner
  • Volume/Page
  • Keyword
  • DOI
  • Citation
  • Advanced
   
 
 
 

Flickr Twitter iResearch App Facebook

BROWSE VOLUMES

Year Range: 
Search Issue | RSS Feeds RSS
Previous Issue Next Issue

15 Feb 2003

Volume 93, Issue 4, pp. 1859-2309

Return to All Sections
back to top
RSS Feeds

Triboelectric charging of a perfluoropolyether lubricant

J. V. Wasem, B. L. LaMarche, S. C. Langford, and J. T. Dickinson

J. Appl. Phys. 93, 2202 (2003); http://dx.doi.org/10.1063/1.1536011 (6 pages) | Cited 8 times

Online Publication Date: 30 January 2003

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Perfluoropolyethers (PFPE) are used extensively to lubricate hard disks for high density information storage. Some PFPE lubricants have been shown to be vulnerable to dissociative electron attachment as well as electron bombardment. Triboelectric charges generated during sliding contact may generate quasi-free electrons capable of degrading the lubricant. We describe measurements of triboelectric charging in a model polymer-metal system with and without a PFPE lubricant and show that negative charge accumulates on the substrate polymer surface, both with and without the lubricant. In the presence of the lubricant, some of this charge moves through and becomes bound to the lubricant. Electron and positive ion emission from PTFE-lubricated surfaces during contact sliding again indicate motion of charge through the lubricant. Ion emission in particular suggests possible degradation of the lubricant. © 2003 American Institute of Physics.
Show PACS
85.70.Li Other magnetic recording and storage devices (including tapes, disks, and drums)
73.61.Ph Polymers; organic compounds
41.20.Cv Electrostatics; Poisson and Laplace equations, boundary-value problems
46.55.+d Tribology and mechanical contacts
62.20.Qp Friction, tribology, and hardness
81.40.Pq Friction, lubrication, and wear

Studies of surface two-dimensional photonic band-gap structures

A. W. Cross, I. V. Konoplev, A. D. R. Phelps, and K. Ronald

J. Appl. Phys. 93, 2208 (2003); http://dx.doi.org/10.1063/1.1531816 (11 pages) | Cited 11 times

Online Publication Date: 30 January 2003

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Two-dimensional (2D) surface photonic band-gap (SPBG) structures can be obtained by providing a shallow corrugation of the inner surface of a waveguide wall. It can be used as a distributed mirror, a cavity, or a filter in integrated optics or microwave electronics. These structures can also be an alternative to conventional 2D PBG or 1D Bragg structures. In this article, we present the results of theoretical and experimental studies of 2D SPBG structures. Data obtained from experiments are compared with theoretical results and good agreement between theory and experiment is demonstrated. Comparison of a coaxial 2D SPBG structure with a conventional 1D Bragg structure is also presented. © 2003 American Institute of Physics.
Show PACS
42.70.Qs Photonic bandgap materials
42.82.Et Waveguides, couplers, and arrays
84.40.Az Waveguides, transmission lines, striplines
84.30.Vn Filters
42.79.Ci Filters, zone plates, and polarizers
84.40.Dc Microwave circuits
42.79.Gn Optical waveguides and couplers
42.79.Bh Lenses, prisms and mirrors

Electrostatic detachment of an adhering particle from a micromanipulated probe

Shigeki Saito, Hideo Himeno, and Kunio Takahashi

J. Appl. Phys. 93, 2219 (2003); http://dx.doi.org/10.1063/1.1537452 (6 pages) | Cited 18 times

Online Publication Date: 30 January 2003

Full Text: Read Online (HTML) | Download PDF

Show Abstract
During micromanipulation, the influence of gravitational force becomes extremely small. The adhesional force is more significant for smaller objects. An adhered object can be detached by electrostatic interaction. In our earlier study, the electrostatic force generated by an applied voltage and the voltage required for detachment have been theoretically analyzed using the boundary element method (BEM). The system consists of a manipulation probe, a spherical microparticle, and a substrate plate. These objects are all conductive. In this study, the voltage for detachment of a microparticle with a 30-μm diameter is experimentally clarified, and is revealed to be in good agreement with the voltage predicted by BEM analysis. In addition, phenomena other than detachment are discussed based on observations through an optical video microscope. These results provide us with knowledge about the strategy for reliable electrostatic micromanipulation. © 2003 American Institute of Physics.
Show PACS
41.20.Cv Electrostatics; Poisson and Laplace equations, boundary-value problems
85.85.+j Micro- and nano-electromechanical systems (MEMS/NEMS) and devices
68.35.Np Adhesion
02.60.Lj Ordinary and partial differential equations; boundary value problems

Thermal stress at wafer contact points in rapid thermal processing investigated by repeated spike treatment before oxidation

Chao-Chi Hong, Chang-Yun Chang, Chaung-Yuan Lee, and Jenn-Gwo Hwu

J. Appl. Phys. 93, 2225 (2003); http://dx.doi.org/10.1063/1.1539536 (4 pages) | Cited 1 time

Online Publication Date: 30 January 2003

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Repeated spike treatment (RST), which was characterized by setting the temperature to ramp up and down repeatedly, was employed to study the stress effect on wafers by annealing the silicon wafers in ambient N2, followed by oxidation in O2. These RST+O samples had three apparent local thick oxide regions that adjoined the contacts of the three-pin quartz holder, as opposed to the typical+O samples annealed with a conventional temperature profile before the same oxidation process. It was observed that defects could be created on the silicon surface due to the high thermal stress at contacts during RST, and that the oxidation rate of these damaged zones was greatly increased. I–V data show that for a similar oxide thickness, the leakage currents in RST+O samples are higher and more scattered than those in typical+O samples. C–V measurements illustrate that RST+O samples have higher interface state densities than typical+O samples. These enhanced degradation phenomena could be caused by the RST, which resulted in a rough Si/SiO2 interface and nonuniform oxide thickness. © 2003 American Institute of Physics.
Show PACS
85.40.-e Microelectronics: LSI, VLSI, ULSI; integrated circuit fabrication technology
81.65.Mq Oxidation
61.72.Cc Kinetics of defect formation and annealing

Finite collection time effects in autocovariance function measurements

A. Menzel, E. H. Conrad, M. C. Tringides, M. Kammler, and M. Horn von Högen

J. Appl. Phys. 93, 2229 (2003); http://dx.doi.org/10.1063/1.1537466 (7 pages)

Online Publication Date: 30 January 2003

Full Text: Read Online (HTML) | Download PDF

Show Abstract
In this paper we discuss how finite data sets influence experimental measurements of the autocovariance function. Autocovariance estimators are biased, meaning that the expectation value for any measured autocovariance function is not identical to the actual autocovariance function. In this work we show that the measured autocovariance function for a finite length time series must become negative for some lag times. We derive analytic corrections to these finite time errors for different types of correlated random sequences. Our results explain the apparent anticorrelated noise observed in experimental observations. © 2003 American Institute of Physics.
Show PACS
02.30.Sa Functional analysis
02.30.Lt Sequences, series, and summability
05.45.Tp Time series analysis
02.50.-r Probability theory, stochastic processes, and statistics

Shear force detection by using bimorph cantilever with the enhanced Q factor

F. H. Lei, J.-L. Nicolas, M. Troyon, G. D. Sockalingum, S. Rubin, and M. Manfait

J. Appl. Phys. 93, 2236 (2003); http://dx.doi.org/10.1063/1.1539303 (8 pages) | Cited 10 times

Online Publication Date: 30 January 2003

Full Text: Read Online (HTML) | Download PDF

Show Abstract
An improved nonoptical shear force detection system based on a rectangular bimorph cantilever incorporating the force feedback technique has been developed for tip–sample distance regulation in shear force microscopy. The force feedback amplifier consisting of a phase shifter and a linear amplifier is adjusted in such a way that the motion of the cantilever is mechanically amplified, resulting in a great enhancement of quality factor Q. Driving a fiber attached bimorph cantilever at its first harmonic resonance, with a phase shift φ=π/2 and an appropriate amplifier gain, allows one to obtain a Q factor greater than 103 in air, which corresponds to a Q enhancement of more than 1 order of magnitude. The effect of Q enhancement leads to an increase in the signal to noise ratio and thus the force detection sensitivity of the system. Typically, the minimum interaction force that can be sensed by the system is about 2 pN/√Hz. Topographic images of a human aorta tissue section in its natural state, taken with the described shear force detection system, show that it is very sensitive, reliable, and particularly suitable for biological applications. © 2003 American Institute of Physics.    
Show PACS
87.64.Dz Scanning tunneling and atomic force microscopy
07.79.Lh Atomic force microscopes
68.37.Ps Atomic force microscopy (AFM)

Optical emission spectroscopy and time-of-flight investigations of plasmas generated from AlN targets in cases of pulsed laser deposition with sub-ps and ns ultraviolet laser pulses

Carmen Ristoscu, Ion N. Mihailescu, Michalis Velegrakis, Maria Massaouti, Argyro Klini, and Costas Fotakis

J. Appl. Phys. 93, 2244 (2003); http://dx.doi.org/10.1063/1.1539537 (7 pages) | Cited 2 times

Online Publication Date: 30 January 2003

Full Text: Read Online (HTML) | Download PDF

Show Abstract
We performed a comparative study of the plasma generated from AlN targets under sub-ps vs ns UV (λ=248 nm) excimer laser pulses. Optical emission and time-of-flight spectra recorded in cases of samples irradiated with ns laser pulses showed the presence of Al lines, which became prevalent after the first laser pulse was incident on the target. These observations are congruent with the metallization of AlN targets inside each crater under multipulse ns laser action at laser fluences above the ablation threshold, observed by visual inspection and optical microscopy. Metallization was not observed when working with sub-ps laser pulses. Moreover, our studies confirmed the predominant presence of AlN positive molecular ions in the plasma generated in front of AlN targets submitted to sub-ps multipulse laser irradiation. The optical emission data are in good agreement with time-of-flight mass analysis. We emphasize that all investigations support the experimental evidence reported by György et al. [E. György et al., J. Appl. Phys. 90, 456 (2001)], according to which thin films obtained by pulsed laser deposition with ns laser pulses contain a significant amount of metallic Al, while only AlN is detected in films obtained with sub-ps laser pulses. Measurements of the velocity and kinetic energy distributions of AlN+ indicate that in the case of ns-laser ablation the ions are emitted with thermal energy, while in the case of sub-ps-laser ablation a bimodal distribution exists and has thermal (1 eV) and hyperthermal (10 eV) energy components. This points to different plasma formation mechanisms for the two cases. © 2003 American Institute of Physics.
Show PACS
81.15.Fg Pulsed laser ablation deposition
52.38.Mf Laser ablation
79.20.Ds Laser-beam impact phenomena
78.40.Fy Semiconductors
61.80.Ba Ultraviolet, visible, and infrared radiation effects (including laser radiation)
78.66.Fd III-V semiconductors

Iterative solution of multiple scattering and emission from inhomogeneous scatter media

Ya-Qiu Jin and Zhichang Liang

J. Appl. Phys. 93, 2251 (2003); http://dx.doi.org/10.1063/1.1539287 (6 pages) | Cited 2 times

Online Publication Date: 30 January 2003

Full Text: Read Online (HTML) | Download PDF

Show Abstract
An iterative layering method is developed to take into account multiple scattering of random media in vector radiative transfer. By stratifying the random media into multiple thin slabs and employing the low-order approximated Mueller matrix solution of each thin slab, high-order scattering of the whole scatter media can be derived. This approach is applied to simulation of the polarized brightness temperature from an inhomogeneous snowpack, which is modeled as a layer of randomly and densely distributed spherical particles with nonuniform profiles of particle size, fractional volume, and physical temperature. Numerical results are compared with a conventional eigen-analysis approach for a uniform scatter medium. The functional dependence of multiple scattering and emission upon the characteristic parameters, such as the profiles of particle size, fractional volume, physical temperature, etc., are discussed. The results are also compared with microwave remote sensing measurements of a multilayered snowpack. © 2003 American Institute of Physics.
Show PACS
41.20.Jb Electromagnetic wave propagation; radiowave propagation
02.60.Dc Numerical linear algebra
07.57.-c Infrared, submillimeter wave, microwave and radiowave instruments and equipment
93.85.-q Instruments and techniques for geophysical research: Exploration geophysics
02.10.Yn Matrix theory
92.40.Ea Precipitation
07.07.Df Sensors (chemical, optical, electrical, movement, gas, etc.); remote sensing

Kinetics of NO nitridation in SiO2/4H–SiC

K. McDonald, L. C. Feldman, R. A. Weller, G. Y. Chung, C. C. Tin, and J. R. Williams

J. Appl. Phys. 93, 2257 (2003); http://dx.doi.org/10.1063/1.1539541 (5 pages) | Cited 24 times

Online Publication Date: 30 January 2003

Full Text: Read Online (HTML) | Download PDF

Show Abstract
The kinetics of nitrogen incorporation in SiO2/4H–SiC using NO are presented. Samples were annealed in NO at pressures of 100 Torr and 1 atm, at temperatures from 1050 to 1175 °C, and for times from 0.5 to 6 h. Annealing in NO incorporates ∼1014 cm−2 of nitrogen at the SiO2/SiC interface. The nitrogen content initially increases with time and temperature, but nitrogen is removed at later times at temperatures above 1050 °C. This nitrogen removal, and the associated oxide growth in the SiC substrate, is caused by O2 formed by the thermal decomposition of NO. Eventually, the nitridation and oxidation reactions reach equilibrium, and the nitrogen content saturates as the oxide thickness increases. © 2003 American Institute of Physics.
Show PACS
81.65.Rv Passivation
81.65.Lp Surface hardening: nitridation, carburization, carbonitridation
81.65.Mq Oxidation
61.72.Cc Kinetics of defect formation and annealing
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
85.30.Tv Field effect devices

Room-temperature growth of crystalline indium tin oxide films on glass using low-energy oxygen-ion-beam assisted deposition

C. Liu, T. Matsutani, T. Asanuma, K. Murai, M. Kiuchi, E. Alves, and M. Reis

J. Appl. Phys. 93, 2262 (2003); http://dx.doi.org/10.1063/1.1538335 (5 pages) | Cited 20 times

Online Publication Date: 30 January 2003

Full Text: Read Online (HTML) | Download PDF

Show Abstract
One of the long-standing problems to improve the resolution of organic electroluminescence devices has been related to the fabrication of very smooth, high-quality indium tin oxide (ITO) layers at room temperature. It seems that this problem could be solved by low-energy oxygen-ion-beam assisted electron-beam evaporation of ITO bulk material in vacuum. The oxygen ions were produced in an electron cyclotron resonance source with energies varied between 50 and 1000 eV. The growth rate changes from 0.04 to 0.23 nm/s. The structural, electrical and optical properties were characterized by x-ray diffraction, Rutherford backscattering, atomic force microscopy, Hall-effect and optical transmittance measurements. Crystalline structure, which depends only on the thickness of the deposited ITO films, can be easily obtained at room temperature. A very smooth surface of only 0.6 nm roughness (root mean square), almost one order smaller than that prepared by other methods, low resistivity of 7.0×10−4 Ω cm, high carrier density of 6.1×1020 cm−3, and high optical transmittance of 85% at wavelength 550 nm (including the glass substrate) could be repeatedly achieved at room temperature. © 2003 American Institute of Physics.
Show PACS
81.05.Hd Other semiconductors
81.15.Jj Ion and electron beam-assisted deposition; ion plating
68.55.-a Thin film structure and morphology
73.61.Le Other inorganic semiconductors
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
78.66.Li Other semiconductors
68.35.B- Structure of clean surfaces (and surface reconstruction)
68.47.Fg Semiconductor surfaces
68.47.Gh Oxide surfaces
68.49.Sf Ion scattering from surfaces (charge transfer, sputtering, SIMS)
68.37.Ps Atomic force microscopy (AFM)
73.50.Jt Galvanomagnetic and other magnetotransport effects (including thermomagnetic effects)
78.40.Fy Semiconductors

Effects of competitive carbon monoxide adsorption on the hydrogen response of metal–insulator–semiconductor sensors: the role of metal film morphology

J. Will Medlin, Anthony H. McDaniel, Mark D. Allendorf, and Robert Bastasz

J. Appl. Phys. 93, 2267 (2003); http://dx.doi.org/10.1063/1.1539898 (8 pages) | Cited 10 times

Online Publication Date: 30 January 2003

Full Text: Read Online (HTML) | Download PDF

Show Abstract
We have investigated the effects of carbon monoxide coadsorption on the performance of hydrogen-sensitive palladium metal–insulator–semiconductor (MIS) sensors, and have found that device performance is highly dependent on the morphology of the metal film. On smooth, continuous films, experiments utilizing H2/CO mixtures show that CO induces a time-delayed increase in response to H2. Based on a kinetic model of CO and hydrogen adsorption on the Pd film, this increase is interpreted as being due to trapping of H atoms at the Pd–SiO2 interface by CO adsorbed on the metal surface. However, MIS sensors fabricated so that a large concentration of voids exist in the metal film respond in a markedly different fashion: on these devices, the addition of CO causes a time-delayed decrease in the sensor response. Possible explanations for this attenuating CO effect are discussed. The experimental and modeling results presented here suggest that sensor behavior in the presence of competitively adsorbing mixtures can be quite complex, with film imperfections playing an important role in determining the response. © 2003 American Institute of Physics.
Show PACS
07.07.Df Sensors (chemical, optical, electrical, movement, gas, etc.); remote sensing
85.30.Tv Field effect devices
68.43.Mn Adsorption kinetics
68.55.-a Thin film structure and morphology
61.72.Qq Microscopic defects (voids, inclusions, etc.)

Energy landscape and thermally activated switching of submicron-sized ferromagnetic elements

Weinan E, Weiqing Ren, and Eric Vanden-Eijnden

J. Appl. Phys. 93, 2275 (2003); http://dx.doi.org/10.1063/1.1536737 (8 pages) | Cited 29 times

Online Publication Date: 30 January 2003

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Thermally activated switching and the energy landscape of submicron-sized magnetic elements are studied using the string method. For thin films, we found that switching proceeds by two generic scenarios: Domain-wall propagation and reconnection followed by edge domain switching, or vortex nucleation at the boundary followed by vortex propagation through the sample. The second scenario is preferred for thicker films whereas the first is preferred for thin (less than 20 nm) films. The energy landscape of such a system is nicely summarized on the plane spanned by the average magnetization in the in-plane directions. For three-dimensional samples, we found that switching proceeds by vortex propagation through the sample. The implication of the Landau–Lifshitz dynamics is also discussed. © 2003 American Institute of Physics.
Show PACS
75.70.Ak Magnetic properties of monolayers and thin films
75.50.Bb Fe and its alloys
75.60.Ej Magnetization curves, hysteresis, Barkhausen and related effects
75.70.Kw Domain structure (including magnetic bubbles and vortices)
75.60.Ch Domain walls and domain structure
05.40.Fb Random walks and Levy flights
75.40.Gb Dynamic properties (dynamic susceptibility, spin waves, spin diffusion, dynamic scaling, etc.)
Return to All Sections
Close

Google Calendar

ADVERTISEMENT

Go to AIP Home   © AIP Publishing LLC
close