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15 Feb 2003

Volume 93, Issue 4, pp. 1859-2309

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Mechanism of electrical degradation and breakdown of insulating polymers

V. A. Zakrevskii, N. T. Sudar, A. Zaopo, and Yu. A. Dubitsky

J. Appl. Phys. 93, 2135 (2003); http://dx.doi.org/10.1063/1.1531820 (5 pages) | Cited 13 times

Online Publication Date: 30 January 2003

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The electrical breakdown of polymers with saturated bonds is considered as a consequence of formation of low-density regions in the bulk of the polymers. These regions form due to the dissociation of chemical bonds initiated by the ionization of macromolecules in a high electric field. It was shown that the electrical lifetime of a polymer can be estimated based on this approach. © 2003 American Institute of Physics.
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77.22.Jp Dielectric breakdown and space-charge effects
61.41.+e Polymers, elastomers, and plastics

Dielectric properties of Zn1−xMnxTe epilayers

S. P. Fu, Y. F. Chen, J. C. Wang, J. L. Shen, and W. C. Chou

J. Appl. Phys. 93, 2140 (2003); http://dx.doi.org/10.1063/1.1533125 (5 pages) | Cited 2 times

Online Publication Date: 30 January 2003

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We report on the dielectric properties of Zn1−xMnxTe (0≦x≦0.268) epilayers studied by capacitance and dissipation factor measurements at a temperature of 200 K<T<460 K and a frequency of 20 Hz<f<1 MHz. A Debye-like relaxation in the dielectric response has been observed, which is explained in terms of the presence of charge redistribution. The relaxation is found to be a thermally activated process, and the activation energies obtained from both dissipation factor and capacitance are in good agreement. It is also found that the activation energy decreases with increasing Mn content and this behavior is interpreted in terms of the four-center model, in which the number of Mn atoms appearing in the nearest-neighbor sites of a defect can have four possible configurations. In addition, we demonstrate that the mechanism responsible for the conduction of carrier hopping among structural defects can be attributed to the correlated barrier hopping model. © 2003 American Institute of Physics.
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77.22.Gm Dielectric loss and relaxation
73.61.Ga II-VI semiconductors
73.50.Dn Low-field transport and mobility; piezoresistance
77.55.-g Dielectric thin films

Prediction of domain nucleation and growth during polarization switching in ferroelectric thin films

Sang-Joo Kim, Joonho Shin, and Yun-Jae Kim

J. Appl. Phys. 93, 2145 (2003); http://dx.doi.org/10.1063/1.1538340 (8 pages) | Cited 2 times

Online Publication Date: 30 January 2003

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A three-dimensional constitutive model for polarization switching in ferroelectric ceramics is presented and implemented into a finite element code. The developed code is applied to investigate the nucleation and growth of domains in a ferroelectric thin film. Initially the thin film is completely poled upward and its bottom electrode is grounded. Then a point on the top surface of the film is subjected to a constant positive electric potential for a certain period of time, leading to a polarization switching downward. The distribution of electric field is not homogeneous within the film and so neither the distribution of polarization. It is found that initially the switched zone is of a dagger shape but after the switched zone penetrates the film thickness it changes to the shape of a reversed cup with the lower part wider that the upper part. It is also observed that the width of switched zone increases with the period and magnitude of applied potential. The predictions are qualitatively compared with experimental observations. © 2003 American Institute of Physics.
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77.80.Fm Switching phenomena
77.80.Dj Domain structure; hysteresis
77.55.-g Dielectric thin films
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.22.Ej Polarization and depolarization
02.70.Dh Finite-element and Galerkin methods
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