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Journal of Applied Physics / Volume 93 / Issue 11 / COMMUNICATIONS

J. Appl. Phys. 93, 9383 (2003); http://dx.doi.org/10.1063/1.1571962 (3 pages)

Improved light-output and electrical performance of InGaN-based light-emitting diode by microroughening of the p-GaN surface

Chul Huh1, Kug-Seung Lee2, Eun-Jeong Kang2, and Seong-Ju Park2

1Department of Electrical and Computer Engineering, Cornell University, Ithaca, New York 14853
2Nanophotonic Semiconductor Laboratory, Department of Materials Science and Engineering, Kwangju Institute of Science and Technology, Kwangju 500-712, Korea

(Received 27 November 2002; accepted 4 March 2003)

We report on an InGaN-based light-emitting diode (LED) with a top p-GaN surface microroughened using the metal clusters as a wet etching mask. The light-output power for a LED chip with microroughening was increased compared to that for a LED chip without one. This indicates that the scattering of photons emitted in the active layer was much enhanced at the microroughened top p-GaN surface of a LED due to the angular randomization of photons inside the LED structure, resulting in an increase in the probability of escaping from the LED structure. By employing the top surface microroughened in a LED structure, the power conversion efficiency was increased by 62%. © 2003 American Institute of Physics.

© 2003 American Institute of Physics

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KEYWORDS and PACS

Keywords

indium compounds, gallium compounds, III-V semiconductors, wide band gap semiconductors, light emitting diodes, quantum well devices, surface topography, etching

PACS

  • 85.60.Jb

    Light-emitting devices

  • 85.35.Be

    Quantum well devices (quantum dots, quantum wires, etc.)

  • 81.65.Cf

    Surface cleaning, etching, patterning

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.1571962

PUBLICATION DATA

ISSN

0021-8979 (print)  
1089-7550 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

For access to fully linked references, you need to log in.
    M. A. Khan, J. N. Kuznia, A. R. Bhattarai, and D. T. Olson, Appl. Phys. Lett. 62, 1786 (1993)APPLAB000062000015001786000001.

    J. J. Wierer et al., Appl. Phys. Lett. 78, 3379 (2001)APPLAB000078000022003379000001.

    X. Hu, D. G. Cahill, and R. S. Averback, J. Appl. Phys. 89, 7777 (2001)JAPIAU000089000012007777000001.

    X. A. Cao et al., Appl. Phys. Lett. 75, 2569 (1999)APPLAB000075000017002569000001.

    D. A. Stocker, E. F. Schubert, and J. M. Redwing, Appl. Phys. Lett. 73, 2654 (1998)APPLAB000073000018002654000001.

    C. Huh, S.-W. Kim, H.-S. Kim, H.-M. Kim, H. Hwang, and S.-J. Park, Appl. Phys. Lett. 78, 1766 (2001)APPLAB000078000012001766000001.

    I. Schnitzer, E. Yablonovitch, C. Caneau, T. J. Gmitter, and A. Scherer, Appl. Phys. Lett. 63, 2174 (1993)APPLAB000063000016002174000001.


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