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15 May 2003

Volume 93, Issue 10, pp. 5855-8792

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Read performance of GMR heads with in-stack longitudinal bias layer

Masahiko Hatatani, Katsumi Hoshino, Hiroyuki Hoshiya, Taku Shintani, Katsuro Watanabe, Kazuhiro Nakamoto, Haruko Tanaka, and Hiroshi Ide

J. Appl. Phys. 93, 7310 (2003); http://dx.doi.org/10.1063/1.1557371 (3 pages) | Cited 5 times

Online Publication Date: 9 May 2003

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Shielded GMR heads with an in-stack bias layer were designed, fabricated, and their read performance was measured. Since the bias layer and the free layer antiferromagnetically couple at the edge of the sensor, a closed magnetic flux structure (CFS) is formed. The results of micromagnetic simulation revealed that when an MnIr antiferromagnetic layer is used to pin the magnetization of the bias layer, the Ms⋅t of the bias layer normalized by that of the free layer should be between 1.2 and 1.5. Here Ms and t are the saturation magnetization and the thickness of the layer. The read waveform of the fabricated head was noise free and well biased. The obtained read sensitivity of the CFS head was four times higher than that of a conventional abutted junction head. Calculation revealed that the read sensitivity of the CFS head was almost five times higher than that of conventional heads when the magnetic track width was reduced to 100 nm. Thus, CFS heads show potential for high track density recording. © 2003 American Institute of Physics.
Show PACS
85.70.Kh Magnetic thin film devices: magnetic heads (magnetoresistive, inductive, etc.); domain-motion devices, etc.
75.47.De Giant magnetoresistance
75.50.Ee Antiferromagnetics
75.70.Cn Magnetic properties of interfaces (multilayers, superlattices, heterostructures)
85.75.Bb Magnetic memory using giant magnetoresistance
75.50.Ss Magnetic recording materials
75.60.Ej Magnetization curves, hysteresis, Barkhausen and related effects
75.40.Mg Numerical simulation studies

Magnetic and thermal properties of PtMn giant magnetoresistive sensors

Andrei Khapikov, Bogdan Simion, and Marcos Lederman

J. Appl. Phys. 93, 7313 (2003); http://dx.doi.org/10.1063/1.1557366 (3 pages) | Cited 2 times

Online Publication Date: 9 May 2003

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The thermal stability of PtMn exchange-biased magnetoresistive heads has been studied. Constant temperature and bias current have been applied, and the amplitude has been measured as a function of time to determine the decay rate and lifetimes. An approach to lifetime data analysis has been developed to estimate the intrinsic sensor temperature and activation energy of the decay mechanism in a self-consistent manner. It has been shown that the internal sensor temperature is higher than the average device temperature determined from the traditional resistance measurements. The method of the lifetime data analysis has allowed the comparison of the activation energy and thermal properties for different types of heads. © 2003 American Institute of Physics.
Show PACS
85.70.Kh Magnetic thin film devices: magnetic heads (magnetoresistive, inductive, etc.); domain-motion devices, etc.

Understanding of amplitude symmetry and its variation of synthetic spin valve heads for high density recording

Dehua Han, Scott Stokes, Dacheng Liu, Yanzhang Liu, Lixin Jia, Juren Ding, and Hong Wang

J. Appl. Phys. 93, 7316 (2003); http://dx.doi.org/10.1063/1.1560012 (3 pages) | Cited 1 time

Online Publication Date: 9 May 2003

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In synthetic antiferromagnetic spin valve (SAF–SV) recording heads, as SV sensor dimensions approach the nanometer scale and individual layer thickness shrinks to only a few angstroms, it becomes more challenging to achieve a unity amplitude symmetry (LFA–SYM) and a small variation of LFA–SYM. A better understanding of LFA–SYM, good control of its variation, and an effective measurement of SAF–SV canting angles has become more important. In this study, high field transfer curve (HF–Xfer) was measured to determine head magnetic polarity, bias point, and output linearity. Rotational field transfer curve (RF–Xfer) was measured to determine the canting angles of reference layer and pinned layer. Free layer canting angle, its dependence on magnetic field, and the angle between the reference layer and free layer were consequently determined based on HF–Xfer and RF–Xfer data. A good linear correlation between LFA–SYM and free layer canting angle was observed, indicating that the large variation of LFA–SYM was mainly due to a wide range of free layer canting. © 2003 American Institute of Physics.
Show PACS
85.70.Kh Magnetic thin film devices: magnetic heads (magnetoresistive, inductive, etc.); domain-motion devices, etc.
75.50.Ss Magnetic recording materials

New early failure phenomenon in electrostatic discharge damaged giant magnetoresistive recording heads

Albert Wallash

J. Appl. Phys. 93, 7319 (2003); http://dx.doi.org/10.1063/1.1557365 (3 pages) | Cited 2 times

Online Publication Date: 9 May 2003

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The magnetic behavior of partially electrostatic discharge (ESD) damaged giant magnetoresistive (GMR) heads during thermal and bias current stress is studied. Heads were ESD damaged to a level that would still pass quasistatic specifications and then monitored while at a higher temperature (100 °C or 150 °C) and bias current (5 to 6 mA) for up to 40 h. While controls showed no early changes, significant changes in amplitude, asymmetry, and Barkhausen jump were seen within the first hour of stressing in 10% of the partially ESD damaged heads. Heads that experienced pinned layer reversal or developed Barkhausen jumps were especially prone to large changes in magnetic response during stressing. It is concluded that some partially ESD damaged GMR heads can exhibit spontaneous and large degradation in amplitude and magnetic stability during high thermal and bias current stressing. © 2003 American Institute of Physics.
Show PACS
85.70.Kh Magnetic thin film devices: magnetic heads (magnetoresistive, inductive, etc.); domain-motion devices, etc.
85.75.Bb Magnetic memory using giant magnetoresistance
75.47.De Giant magnetoresistance
41.20.Cv Electrostatics; Poisson and Laplace equations, boundary-value problems
75.60.Jk Magnetization reversal mechanisms
75.60.Ej Magnetization curves, hysteresis, Barkhausen and related effects
85.75.Ss Magnetic field sensors using spin polarized transport
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