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15 May 2003

Volume 93, Issue 10, pp. 5855-8792

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Magnetic properties of IV–VI compound GeTe based diluted magnetic semiconductors

Y. Fukuma, H. Asada, J. Miyashita, N. Nishimura, and T. Koyanagi

J. Appl. Phys. 93, 7667 (2003); http://dx.doi.org/10.1063/1.1556113 (3 pages) | Cited 13 times

Online Publication Date: 9 May 2003

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Magnetic properties of IV–VI compound GeTe based diluted magnetic semiconductors with 3d transition metals from Ti to Ni have been investigated. Ferromagnetic order is observed for the Cr, Mn, and Fe doped GeTe films, whereas the Ti, V, Co, and Ni doped films are paramagnetic. The ferromagnetic order could give rise to p–d exchange interaction because amplitudes of negative magnetoresistance and the anomalous Hall effect are proportional to that of spontaneous magnetization. The Curie temperatures determined by extrapolating the steep linear part of the temperature dependence of the squared residual magnetization for the Cr, Mn, and Fe doped GeTe films are 12, 47, and 100 K, respectively. © 2003 American Institute of Physics.
Show PACS
75.50.Pp Magnetic semiconductors
75.47.Pq Other materials
75.30.Et Exchange and superexchange interactions
75.30.Kz Magnetic phase boundaries (including classical and quantum magnetic transitions, metamagnetism, etc.)
73.50.Jt Galvanomagnetic and other magnetotransport effects (including thermomagnetic effects)
75.50.Dd Nonmetallic ferromagnetic materials
75.20.Ck Nonmetals
75.30.Cr Saturation moments and magnetic susceptibilities
73.61.Le Other inorganic semiconductors
75.70.Ak Magnetic properties of monolayers and thin films
75.40.Cx Static properties (order parameter, static susceptibility, heat capacities, critical exponents, etc.)

Ferromagnetic properties in Cr, Fe-doped Ge single crystals

Sungyoul Choi, Soon Cheol Hong, Sunglae Cho, Yunki Kim, John B. Ketterson, Chi-Un Jung, K. Rhie, Bong-Jun Kim, and Y. C. Kim

J. Appl. Phys. 93, 7670 (2003); http://dx.doi.org/10.1063/1.1558611 (3 pages) | Cited 21 times

Online Publication Date: 9 May 2003

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We have fabricated Cr and Fe-doped bulk Ge single crystal using the vertical gradient solidification method. The Cr-doped Ge single crystal showed ferromagnetic ordering at 126 K, as determined from temperature dependent magnetization and resistance measurements. The measured magnetic moment per Cr was 0.83 μB at 5 K. On the other hand, Fe0.05Ge0.95 showed ferromagnetic ordering at 233 K. The coersive field was 80 Oe at 5 K. © 2003 American Institute of Physics.
Show PACS
75.50.Pp Magnetic semiconductors
75.50.Dd Nonmetallic ferromagnetic materials
75.60.Ej Magnetization curves, hysteresis, Barkhausen and related effects
72.20.Fr Low-field transport and mobility; piezoresistance
72.80.Cw Elemental semiconductors

Formation of two-dimensional electron gas and the magnetotransport behavior of ZnMnO/ZnO heterostructure

T. Edahiro, N. Fujimura, and T. Ito

J. Appl. Phys. 93, 7673 (2003); http://dx.doi.org/10.1063/1.1558612 (3 pages) | Cited 21 times

Online Publication Date: 9 May 2003

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ZnO based heterostructure, which contains magnetic impurities in the barrier layer, is grown on c-cut sapphire substrate by pulsed laser deposition. The temperature dependence of the mobility of the Zn0.9Mn0.1O/ZnO heterostructure exhibits the suppression of ionized impurity scattering below 100 K. The carrier concentration and the mobility measured at 1.85 K are 4.0×1012 l/cm2 and 360 cm2/V s. Shubnikov–de Haas oscillations are clearly observed in longitudinal magnetoresistance above 3.7 T at the same temperature. These transport properties reveal that two-dimensional electron gas is successfully obtained at the Zn0.9Mn0.1O/ZnO interface. © 2003 American Institute of Physics.
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73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
75.50.Pp Magnetic semiconductors
72.20.My Galvanomagnetic and other magnetotransport effects
81.15.Fg Pulsed laser ablation deposition

Magnetic semiconductors based on cobalt substituted ZnO

K. Rode, A. Anane, R. Mattana, J.-P. Contour, O. Durand, and R. LeBourgeois

J. Appl. Phys. 93, 7676 (2003); http://dx.doi.org/10.1063/1.1556115 (3 pages) | Cited 136 times

Online Publication Date: 9 May 2003

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We have investigated the microstructure and the magnetic properties of cobalt substituted ZnO thin films deposited on sapphire (0001) substrates by pulsed laser deposition. We have optimized the growth condition using in situ monitoring by reflection high-energy electron diffraction. We found that ferromagnetic films need to be grown at low oxygen partial pressure (<10−6 Torr). Films with 25% of Co are ferromagnetic at room temperature with clear out-of-plane anisotropy. We have looked for spurious origins of the ferromagnetic signal and found none. © 2003 American Institute of Physics.
Show PACS
75.70.Ak Magnetic properties of monolayers and thin films
75.50.Pp Magnetic semiconductors
75.50.Dd Nonmetallic ferromagnetic materials
68.55.-a Thin film structure and morphology
81.15.Fg Pulsed laser ablation deposition
75.30.Gw Magnetic anisotropy

Effect of carrier for magnetic and magnetotransport properties of Si:Ce films

T. Yokota, N. Fujimura, T. Wada, S. Hamasaki, and T. Ito

J. Appl. Phys. 93, 7679 (2003); http://dx.doi.org/10.1063/1.1556116 (3 pages) | Cited 2 times

Online Publication Date: 9 May 2003

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Epitaxial Si:Ce films with smooth surfaces were prepared by low temperature molecular beam epitaxy. Although as-deposited films showed positive magnetization due to the existence of Ce having been substituted in Si lattice, the conduction was n type. The conduction changed to p type as a result of hydrogen termination, indicating that the film had contained dangling bonds. The magnetization behavior of the as-deposited n-type sample is completely identical to that of the p-type sample. The temperature dependence of resistivity (ρ–T) for each sample with n-type or p-type conduction has a cusp at 150 K, which is related to the spin–glass transition. But the cusp observed in the ρ–T curve of the sample with n-type conduction is broader than that of the sample with p-type conduction. It seems to have originated from the spin dynamics in Si:Ce with different carrier types. © 2003 American Institute of Physics.
Show PACS
75.50.Pp Magnetic semiconductors
75.70.Ak Magnetic properties of monolayers and thin films
73.50.Jt Galvanomagnetic and other magnetotransport effects (including thermomagnetic effects)
75.47.Pq Other materials
73.61.Cw Elemental semiconductors
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
75.40.Gb Dynamic properties (dynamic susceptibility, spin waves, spin diffusion, dynamic scaling, etc.)
75.60.Ej Magnetization curves, hysteresis, Barkhausen and related effects
75.50.Lk Spin glasses and other random magnets

Organic light emitting diodes with spin polarized electrodes

E. Arisi, I. Bergenti, V. Dediu, M. A. Loi, M. Muccini, M. Murgia, G. Ruani, C. Taliani, and R. Zamboni

J. Appl. Phys. 93, 7682 (2003); http://dx.doi.org/10.1063/1.1556118 (2 pages) | Cited 24 times

Online Publication Date: 9 May 2003

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Electrical and optical properties of Alq3 based organic light emitting diodes with normal and spin polarized electrodes are presented. Epitaxial semitransparent highly spin polarized La0.7Sr0.3MnO3 were used as hole injector, substituting the traditional indium tin oxide electrode. A comparison of electroluminescence and IV curves between similar devices with and without spin polarized injection is reported. The results are a first step in realizing an operating device where the light intensity of the emission can be tuned by controlling the spin injection. © 2003 American Institute of Physics.
Show PACS
85.60.Jb Light-emitting devices
72.25.Mk Spin transport through interfaces
75.47.Lx Magnetic oxides
78.60.Fi Electroluminescence
75.70.Cn Magnetic properties of interfaces (multilayers, superlattices, heterostructures)
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