jap banner
  • Volume/Page
  • Keyword
  • DOI
  • Citation
  • Advanced
   
 
 
 

Flickr Twitter iResearch App Facebook

SECTION LISTING

BROWSE VOLUMES

Year Range: 
Search Issue | RSS Feeds RSS
Previous Issue Next Issue

15 May 2003

Volume 93, Issue 10, pp. 5855-8792

Return to All Sections
back to top
RSS Feeds

Coercive field and magnetization deficit in Ga1−xMnxAs epilayers

S. J. Potashnik, K. C. Ku, R. F. Wang, M. B. Stone, N. Samarth, P. Schiffer, and S. H. Chun

J. Appl. Phys. 93, 6784 (2003); http://dx.doi.org/10.1063/1.1556109 (3 pages) | Cited 21 times

Online Publication Date: 9 May 2003

Full Text: Read Online (HTML) | Download PDF

Show Abstract
We have studied the field dependence of the magnetization in epilayers of the diluted magnetic semiconductor Ga1−xMnxAs for 0.0135<x<0.083. Measurements of the low temperature magnetization in fields up to 3 T show a significant deficit in the total moment below expected for full saturation of all the Mn spins. These results suggest that the spin state of the nonferromagnetic Mn spins is energetically well separated from the ferromagnetism of the bulk of the spins. We have also studied the coercive field (Hc) as a function of temperature and Mn concentration, finding that Hc decreases with increasing Mn concentration as predicted theoretically. © 2003 American Institute of Physics.
Show PACS
75.50.Pp Magnetic semiconductors
75.60.Ej Magnetization curves, hysteresis, Barkhausen and related effects
75.70.Ak Magnetic properties of monolayers and thin films

Magnetoresistance and Hall effect in the ferromagnetic semiconductor Ga1−xMnxAs

K. W. Edmonds, R. P. Campion, K. -Y. Wang, A. C. Neumann, B. L. Gallagher, C. T. Foxon, and P. C. Main

J. Appl. Phys. 93, 6787 (2003); http://dx.doi.org/10.1063/1.1556110 (3 pages) | Cited 7 times

Online Publication Date: 9 May 2003

Full Text: Read Online (HTML) | Download PDF

Show Abstract
The resistivity, temperature, and magnetic field dependence of the anomalous Hall effect in a series of metallic Ga1−xMnxAs thin films with x=0.015 to 0.08 is presented. A quadratic dependence of the anomalous Hall resistance on the resistivity is observed, with a magnitude which is in agreement with Berry phase theories of the anomalous Hall effect in dilute magnetic semiconductors. © 2003 American Institute of Physics.
Show PACS
73.61.Le Other inorganic semiconductors
75.70.Ak Magnetic properties of monolayers and thin films
75.50.Dd Nonmetallic ferromagnetic materials
75.50.Pp Magnetic semiconductors
72.20.My Galvanomagnetic and other magnetotransport effects
73.50.Jt Galvanomagnetic and other magnetotransport effects (including thermomagnetic effects)

Magnetic interaction between GaMnAs layers via spin-polarized quasi-two-dimensional hole gas: Monte Carlo simulation

M. A. Boselli, L. Loureiro da Silva, I. C. da Cunha Lima, and A. Ghazali

J. Appl. Phys. 93, 6790 (2003); http://dx.doi.org/10.1063/1.1556112 (3 pages) | Cited 1 time

Online Publication Date: 9 May 2003

Full Text: Read Online (HTML) | Download PDF

Show Abstract
The magnetic order resulting from an indirect exchange between magnetic moments in the metallic phase of a Ga1−xMnxAs bilayered structure is studied via Monte Carlo simulation. The coupling mechanism involves a perturbative calculation in second order of the interaction between the magnetic moments and carriers (holes). We take into account a possible polarization of the hole gas establishing, thus self-consistency between the magnetic order and the electronic structure. It leads to a ferromagnetic order even in the case of thin layers. This fact is analyzed in terms of the inter- and intralayer interactions. © 2003 American Institute of Physics.
Show PACS
75.70.Cn Magnetic properties of interfaces (multilayers, superlattices, heterostructures)
75.50.Pp Magnetic semiconductors
75.40.Mg Numerical simulation studies
81.05.Ea III-V semiconductors
75.50.Dd Nonmetallic ferromagnetic materials
73.21.Ac Multilayers
02.70.Uu Applications of Monte Carlo methods
75.30.Et Exchange and superexchange interactions
75.30.Cr Saturation moments and magnetic susceptibilities
71.15.-m Methods of electronic structure calculations

Improvement of magnetic property of GaMnN by codoping of Mg

K. H. Kim, K. J. Lee, D. J. Kim, C. S. Kim, H. C. Lee, C. G. Kim, S. H. Yoo, H. J. Kim, and Y. E. Ihm

J. Appl. Phys. 93, 6793 (2003); http://dx.doi.org/10.1063/1.1556114 (3 pages) | Cited 11 times

Online Publication Date: 9 May 2003

Full Text: Read Online (HTML) | Download PDF

Show Abstract
GaMnN and Mg-codoped GaMnN films were grown in molecular beam epitaxy using a GaN single precursor. The structural, electrical, and magnetic properties were examined. The Mg-codoped GaMnN layers revealed room-temperature ferromagnetism. Codoping with Mg reduces the Mn incorporation, but increases the conductivity of the GaMnN films. At the same time, the saturation magnetization and coercivity have increased at room temperature. As this improvement was obtained with much reduced Mn concentration of ∼0.3%, the crucial role of the carriers for carrier-induced ferromagnetism in magnetic semiconductors is observed. © 2003 American Institute of Physics.
Show PACS
75.70.Ak Magnetic properties of monolayers and thin films
75.50.Pp Magnetic semiconductors
75.50.Dd Nonmetallic ferromagnetic materials
81.05.Ea III-V semiconductors
73.61.Ey III-V semiconductors
72.80.Ey III-V and II-VI semiconductors
75.60.Ej Magnetization curves, hysteresis, Barkhausen and related effects
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
85.40.Ry Impurity doping, diffusion and ion implantation technology
61.72.uj III-V and II-VI semiconductors

Room-temperature ferromagnetism in highly Cr-doped II–VI diluted magnetic semiconductor Zn1−xCrxTe

H. Saito, V. Zayets, S. Yamagata, and K. Ando

J. Appl. Phys. 93, 6796 (2003); http://dx.doi.org/10.1063/1.1556117 (3 pages) | Cited 35 times

Online Publication Date: 9 May 2003

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Highly Cr-doped II–VI diluted magnetic semiconductor (DMS) Zn1−xCrxTe films with a ferromagnetic long-range order have been grown. A phase diagram of Zn1−xCrxTe in relation to the growth temperature and Cr concentration was determined. Magnetic circular dichroism measurements revealed that a magnetically single phase of DMS Zn1−xCrxTe is obtained in the films with Cr concentration up to x=0.20. Spontaneous magnetization of the film with x=0.20 disappears around 300 K, indicating that the Zn1−xCrxTe is a DMS with room-temperature ferromagnetism. © 2003 American Institute of Physics.
Show PACS
75.70.Ak Magnetic properties of monolayers and thin films
75.50.Pp Magnetic semiconductors
75.50.Dd Nonmetallic ferromagnetic materials
78.66.Hf II-VI semiconductors
81.05.Dz II-VI semiconductors
78.20.Ls Magneto-optical effects
75.30.Cr Saturation moments and magnetic susceptibilities

Anomalous magnetoresistance in high-temperature organic-based magnetic semiconducting V(TCNE)x films

N. P. Raju, T. Savrin, V. N. Prigodin, K. I. Pokhodnya, Joel S. Miller, and A. J. Epstein

J. Appl. Phys. 93, 6799 (2003); http://dx.doi.org/10.1063/1.1556120 (3 pages) | Cited 30 times

Online Publication Date: 9 May 2003

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Anomalous positive magnetoresistance (MR) in high temperature organic-based magnet V(TCNE)x (TCNE=tetracynoethylene) thin films is reported. MR increases linearly with applied magnetic field and shows a maximum at the ferrimagnetic ordering temperature. The suggested roles of oppositely spin polarized π∗ electronic subbands and magnetization fluctuations due to the disordered nature of V(TCNE)x films are discussed. © 2003 American Institute of Physics.
Show PACS
72.20.My Galvanomagnetic and other magnetotransport effects
73.50.Jt Galvanomagnetic and other magnetotransport effects (including thermomagnetic effects)
72.25.Dc Spin polarized transport in semiconductors
75.50.Pp Magnetic semiconductors
72.80.Le Polymers; organic compounds (including organic semiconductors)
73.61.Ph Polymers; organic compounds
75.50.Gg Ferrimagnetics
75.50.Xx Molecular magnets
Return to All Sections
Close

Google Calendar

ADVERTISEMENT

Go to AIP Home   © AIP Publishing LLC
close