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15 May 2003

Volume 93, Issue 10, pp. 5855-8792

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Epitaxially grown GaAsN random laser

B. Q. Sun, M. Gal, Q. Gao, H. H. Tan, C. Jagadish, T. Puzzer, L. Ouyang, and J. Zou

J. Appl. Phys. 93, 5855 (2003); http://dx.doi.org/10.1063/1.1568533 (4 pages) | Cited 6 times

Online Publication Date: 9 May 2003

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We have studied the photoluminescence properties of as-grown GaAs1−xNx epitaxial layers grown on GaAs containing 0.6%, 1.77%, and 2.8% nitrogen. We found laser emission from thick (d>200 nm) GaAs0.972N0.028 layers exhibiting the characteristic lasing properties of random lasers. This is unusual because random lasers have so far only been associated with highly disordered or random media. We believe that high gain in combination with structural inhomogeneities that are evident in these GaAs0.972N0.028 layers, can explain the random lasing in such epitaxial layers. © 2003 American Institute of Physics.
Show PACS
78.55.Cr III-V semiconductors
78.66.Fd III-V semiconductors
68.55.-a Thin film structure and morphology
42.70.Nq Other nonlinear optical materials; photorefractive and semiconductor materials
68.37.Hk Scanning electron microscopy (SEM) (including EBIC)

Asymptotic analysis of dispersion characteristics in two-dimensional metallic photonic band gap structures

Evgenya I. Smirnova and Chiping Chen

J. Appl. Phys. 93, 5859 (2003); http://dx.doi.org/10.1063/1.1568530 (7 pages) | Cited 1 time

Online Publication Date: 9 May 2003

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We present a self-consistent technique for the asymptotic analysis of dispersion curves in two-dimensional metallic photonic band gap structures representing square and triangular arrays of metal rods. The technique is applicable for the structures with rod radii (a), which are small compared to the distance between the rods (b) and to the wavelength (λ). The induced current and charge distributions on the rods are expressed self-consistently in terms of the electromagnetic wave field. The dispersion characteristics are calculated for the TE and TM modes. The results are in agreement with those obtained previously using the Photonic Band Gap Structure Simulator code. © 2003 American Institute of Physics.
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42.70.Qs Photonic bandgap materials

Fabrication of photonic band gap crystal using microtransfer molded templates

W. Y. Leung, H. Kang, K. Constant, D. Cann, C.-H. Kim, R. Biswas, M. M. Sigalas, and K.-M. Ho

J. Appl. Phys. 93, 5866 (2003); http://dx.doi.org/10.1063/1.1568548 (5 pages) | Cited 8 times

Online Publication Date: 9 May 2003

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We have proposed and demonstrated an economical technique to fabricate a three-dimensional layer-by-layer photonic band gap structure in the infrared wavelengths. An organic polymer template structure, an inverse layer-by-layer photonic crystal structure, is assembled using the microtransfer molding technique. This template is infiltrated with sol-gel or nanoparticle titanium oxide slurry, then later removed by heat treatment at a temperature range of 550–800 °C. This method can be extended to fabricate photonic crystals operating at optical and ultraviolet frequencies. © 2003 American Institute of Physics.
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42.70.Qs Photonic bandgap materials
42.86.+b Optical workshop techniques

Aperture shape effect on the performance of very small aperture lasers

Fang Chen, D. D. Stancil, and T. E. Schlesinger

J. Appl. Phys. 93, 5871 (2003); http://dx.doi.org/10.1063/1.1568150 (5 pages) | Cited 7 times

Online Publication Date: 9 May 2003

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We report on the effect of different aperture shapes on the power output of a very small aperture laser (VSAL) fabricated from commercial edge-emitting laser diodes and correlate the results to the layer structure and polarization of the optical field. A waveguide theory is used to explain the experimental observations. We show that the shape of the aperture has a significant effect on the VSAL output power. In particular shapes exploiting the asymmetry of the laser can achieve much higher throughput over square apertures while keeping the aperture area constant. This work also indicates the validity of analyzing near-field small apertures as cutoff waveguide structures. © 2003 American Institute of Physics.
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42.60.By Design of specific laser systems
42.55.Px Semiconductor lasers; laser diodes
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