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15 May 2003

Volume 93, Issue 10, pp. 5855-8792

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High rate deposition of diamond like carbon films by very high frequency plasma enhanced chemical vapor deposition at 100 MHz

Sushil Kumar, P. N. Dixit, D. Sarangi, and R. Bhattacharyya

J. Appl. Phys. 93, 6361 (2003); http://dx.doi.org/10.1063/1.1561997 (9 pages) | Cited 8 times

Online Publication Date: 9 May 2003

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Diamond like carbon (DLC) films were grown using 13.56 and 100 MHz plasma as excitation frequencies in the same plasma enhanced chemical vapor deposition (PECVD) system. Deposition rate, stress, hardness, optical band gap, refractive index, Urbach energy, electrical conductivity, and hydrogen content of these films have been measured. It was found that just by changing the excitation frequency from 13.56 to 100 MHz, deposition rates of DLC films were enhanced about five times. Thus, very high frequency (100 MHz) PECVD process, with imposed dc bias, is capable of producing reasonably hard DLC films at high growth rates. © 2003 American Institute of Physics.
Show PACS
81.05.U- Carbon/carbon-based materials
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
68.60.Bs Mechanical and acoustical properties
73.61.Jc Amorphous semiconductors; glasses
78.66.Jg Amorphous semiconductors; glasses
81.40.Np Fatigue, corrosion fatigue, embrittlement, cracking, fracture, and failure
62.20.Qp Friction, tribology, and hardness
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
78.35.+c Brillouin and Rayleigh scattering; other light scattering
78.66.Db Elemental semiconductors and insulators
68.55.A- Nucleation and growth
73.61.Cw Elemental semiconductors

Elastic scattering in the iodine–carbon system near the Coulomb barrier

P. Pusa, E. Rauhala, T. Alanko, and J. Räisn̈en

J. Appl. Phys. 93, 6370 (2003); http://dx.doi.org/10.1063/1.1563039 (5 pages)

Online Publication Date: 9 May 2003

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Elastic scattering cross sections for the 127I+C system at non-Rutherford scattering energies have been investigated. Recoil elastic scattering for the reaction C(127I,C)127I was measured at 127I beam energies of 470, 500, and 530 MeV in the laboratory frame of reference. Angular distributions of recoiling carbon were determined at laboratory scattering angles covering a region from 20° to 75°. The cross sections are presented for the recoil C(127I,C)127I and 127I(12C, 12C)127I scattering geometries and were modeled by using the optical model (OM) theory. The OM enables interpolation between data points in the energy-angular plane. Non-Rutherford scattering cross section angular and energy limits are examined for practical elastic recoil detection analysis and Rutherford backscattering.© 2003 American Institute of Physics.
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68.49.Sf Ion scattering from surfaces (charge transfer, sputtering, SIMS)
79.20.Rf Atomic, molecular, and ion beam impact and interactions with surfaces

Femtosecond laser ablation of polytetrafluoroethylene (Teflon) in ambient air

Z. B. Wang, M. H. Hong, Y. F. Lu, D. J. Wu, B. Lan, and T. C. Chong

J. Appl. Phys. 93, 6375 (2003); http://dx.doi.org/10.1063/1.1568154 (6 pages) | Cited 13 times

Online Publication Date: 9 May 2003

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Teflon, polytetrafluorethylene (PTFE), is an important material in bioscience and medical application due to its special characteristics (bio-compatible, nonflammable, antiadhesive, and heat resistant). The advantages of ultrashort laser processing of Teflon include a minimal thermal penetration region and low processing temperatures, precision removal of material, and good-quality feature definition. In this paper, laser processing of PTFE in ambient air by a Ti:sapphire femtosecond laser (780 nm, 110 fs) is investigated. It is found that the pulse number on each irradiated surface area must be large enough for a clear edge definition and the ablated depth increases with the pulse number. The air ionization effect at high laser fluences not only degrades the ablated structures quality but also reduces the ablation efficiency. High quality microstructures are demonstrated with controlling laser fluence below a critical fluence to exclude the air ionization effect. The ablated microstructures show strong adhesion property to liquids and clear edges that are suitable for bio-implantation applications. Theoretical calculation is used to analyze the evolution of the ablated width and depth at various laser fluences. © 2003 American Institute of Physics.
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81.05.Lg Polymers and plastics; rubber; synthetic and natural fibers; organometallic and organic materials
81.65.-b Surface treatments
61.82.Pv Polymers, organic compounds
61.80.Ba Ultraviolet, visible, and infrared radiation effects (including laser radiation)
61.41.+e Polymers, elastomers, and plastics
68.35.Np Adhesion
87.85.J- Biomaterials

Improved numerical technique to calculate statistical Coulomb blurring

Michel van Veenendaal

J. Appl. Phys. 93, 6381 (2003); http://dx.doi.org/10.1063/1.1569031 (5 pages)

Online Publication Date: 9 May 2003

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This paper studies the effects of Coulomb blurring in charged-particle optics using a method that combines Monte Carlo techniques with analytical calculations. A correction factor for the analytical theory of Jansen and Kruit is obtained. This approach strongly enhances the accuracy of the method, while maintaining the speed of calculation. The method gives good agreement with Monte Carlo simulations. The effects of aperturing are also included. © 2003 American Institute of Physics.
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41.85.-p Beam optics
02.70.Uu Applications of Monte Carlo methods

Passivation of active recombination centers in ZnO by hydrogen doping

Naoki Ohashi, Takamasa Ishigaki, Nobuhiro Okada, Hiroyuki Taguchi, Isao Sakaguchi, Shunichi Hishita, Takashi Sekiguchi, and Hajime Haneda

J. Appl. Phys. 93, 6386 (2003); http://dx.doi.org/10.1063/1.1569034 (7 pages) | Cited 49 times

Online Publication Date: 9 May 2003

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The effect of hydrogen doping on luminescence properties of ZnO was investigated. Hydrogen was incorporated in the ZnO crystal by irradiation with an inductively coupled plasma (ICP), in particular, the pulse modulated mode operation of ICP, and the luminescence spectra and hydrogen concentration of the resultant samples were analyzed. A hydrogenated region of 20–100 nm was formed at the sample surface by the irradiation and the concentration of hydrogen was 1017–1018 cm−3. Hydrogen doping improved the ultraviolet emission efficiency of all the samples, and the degree of improvement depended on the initial state (impurity concentration) of the original samples. The most significant improvements were recorded for the sample lightly contaminated with Cu, Al, and Li. The correlation between impurity concentration and hydrogen doping effects is discussed from the viewpoint of charge transfer between hydrogen and the other impurities. © 2003 American Institute of Physics.
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78.60.Hk Cathodoluminescence, ionoluminescence
61.72.uj III-V and II-VI semiconductors
52.77.Dq Plasma-based ion implantation and deposition
61.72.S- Impurities in crystals
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