jap banner
  • Volume/Page
  • Keyword
  • DOI
  • Citation
  • Advanced
   
 
 
 

Flickr Twitter iResearch App Facebook

SECTION LISTING

BROWSE VOLUMES

Year Range: 
Search Issue | RSS Feeds RSS
Previous Issue Next Issue

15 May 2003

Volume 93, Issue 10, pp. 5855-8792

Return to All Sections
back to top
RSS Feeds

Effect of hygroscopic nature on the electrical characteristics of lanthanide oxides (Pr2O3, Sm2O3, Gd2O3, and Dy2O3)

Sanghun Jeon and Hyunsang Hwang

J. Appl. Phys. 93, 6393 (2003); http://dx.doi.org/10.1063/1.1569028 (3 pages) | Cited 46 times

Online Publication Date: 9 May 2003

Full Text: Read Online (HTML) | Download PDF

Show Abstract
The hygroscopic nature of lanthanide oxides such as Pr2O3, Sm2O3, Gd2O3, and Dy2O3 was characterized by means of x-ray photoelectron spectroscopy and its effect on the electrical characteristics of the compounds was investigated. Among the four samples, Pr2O3 was found to be the most reactive with water which can be attributed to the relatively large ionic radius and lower electronegativity of Pr. In contrast, Dy2O3 was the least reactive with water. A direct correlation between the hygroscopicity and electronegativity of lanthanide elements was found. With increasing hygroscopicity, a significant growth of interfacial oxide with annealing temperature was observed. A clear understanding of the nature of hygroscopic effects and the optimization of process flow will be needed for future high-k gate dielectric application. © 2003 American Institute of Physics.
Show PACS
77.84.Bw Elements, oxides, nitrides, borides, carbides, chalcogenides, etc.
77.55.-g Dielectric thin films
79.60.Dp Adsorbed layers and thin films
61.72.Cc Kinetics of defect formation and annealing
81.40.Gh Other heat and thermomechanical treatments

Evidence for shallow implantation during the growth of bismuth nanocrystals by pulsed laser deposition

J-P. Barnes, A. K. Petford-Long, A. Suárez-García, and R. Serna

J. Appl. Phys. 93, 6396 (2003); http://dx.doi.org/10.1063/1.1564878 (3 pages) | Cited 7 times

Online Publication Date: 9 May 2003

Full Text: Read Online (HTML) | Download PDF

Show Abstract
The implantation of bismuth during pulsed laser deposition (PLD) has been directly observed and investigated. Bi was deposited on amorphous aluminum oxide (Al2O3) and the laser energy density on the Bi target was varied by one order of magnitude (0.4 to 5 J cm−2). Cross-sectional transmission electron micrographs reveal that, for laser energy densities above 2 J cm−2, in addition to the formation of Bi nanocrystals, there is a dark and apparently continuous layer in the Al2O3 underneath them. From previous velocity measurements, the kinetic energy of the Bi species in the plume generated at laser energy densities above 2 J cm−2 has been estimated to be around 200 eV, which gives a calculated implantation range of 1.8 nm in Al2O3. This is in good agreement with the position of the Bi-rich layer. © 2003 American Institute of Physics.
Show PACS
61.72.up Other materials
81.15.Fg Pulsed laser ablation deposition
81.07.Bc Nanocrystalline materials
81.16.Mk Laser-assisted deposition
61.46.-w Structure of nanoscale materials
68.37.Lp Transmission electron microscopy (TEM)
61.80.Jh Ion radiation effects
61.82.Bg Metals and alloys

Crater formation in gold nanoislands due to MeV self-ion irradiation

P. V. Satyam, J. Kamila, S. Mohapatra, B. Satpati, D. K. Goswami, B. N. Dev, R. E. Cook, Lahsen Assoufid, J. Wang, and N. C. Mishra

J. Appl. Phys. 93, 6399 (2003); http://dx.doi.org/10.1063/1.1569026 (3 pages) | Cited 3 times

Online Publication Date: 9 May 2003

Full Text: Read Online (HTML) | Download PDF

Show Abstract
The modification of gold nanoislands, grown on silicon substrates under high-vacuum conditions, by MeV self-ion irradiation has been studied by using scanning electron microscopy, transmission electron microscopy, atomic force microscopy, and x-ray reflectivity. Upon irradiation with 1.5 MeV Au2+, two types of craters are observed on the Au islands: Empty craters and craters with a central hillock. The contribution of plastic flow, pressure spike, and sputtering to the crater formation during the ion impacts on the gold islands is analyzed. Thermal spike confinement within the gold islands is also proposed to be one of the possible reasons for crater formation in nanoislands. © 2003 American Institute of Physics.
Show PACS
61.80.Jh Ion radiation effects
68.35.B- Structure of clean surfaces (and surface reconstruction)
61.82.Bg Metals and alloys
79.20.Rf Atomic, molecular, and ion beam impact and interactions with surfaces
68.55.-a Thin film structure and morphology
68.37.Hk Scanning electron microscopy (SEM) (including EBIC)
68.37.Lp Transmission electron microscopy (TEM)
68.37.Ps Atomic force microscopy (AFM)
62.20.F- Deformation and plasticity
81.40.Lm Deformation, plasticity, and creep

Demonstration of a reflective coupling diode in a coupled waveguide structure

M. J. Gilbert, R. Akis, and D. K. Ferry

J. Appl. Phys. 93, 6402 (2003); http://dx.doi.org/10.1063/1.1563827 (3 pages) | Cited 1 time

Online Publication Date: 9 May 2003

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Despite the difficulty in fabrication, resonant tunneling diodes (RTD) have found a great deal of usage in the analog, digital, and mixed signal realms as a means of increasing the speed of signal processing circuitry or in reducing the static power dissipation in the circuitry. Nevertheless, RTDs suffer from their nonplanar structure. In this paper, we present a planar diode which operates via coupling of injected electron modes or a reflective coupling diode from an input waveguide to a corresponding output waveguide in a semiconductor hetrostructure. We demonstrate that the I–V characteristics of this structure exhibit the characteristic negative differential conductance of RTD current–voltage characteristics. The resultant behavior of this planar device shows great promise for eventual implementation in ultrasmall high-speed circuitry. © 2003 American Institute of Physics.
Show PACS
42.82.Et Waveguides, couplers, and arrays
85.30.Kk Junction diodes
81.05.Ea III-V semiconductors
78.66.Fd III-V semiconductors
73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
85.30.Mn Junction breakdown and tunneling devices (including resonance tunneling devices)
42.79.Gn Optical waveguides and couplers

Optical observation of preflashover phenomena from polytetrafluoroethylene in a planar concentric structure

Guan-Jun Zhang, Z. Yan, Y. S. Liu, K. Yasuoka, and S. Ishii

J. Appl. Phys. 93, 6405 (2003); http://dx.doi.org/10.1063/1.1565510 (3 pages) | Cited 1 time

Online Publication Date: 9 May 2003

Full Text: Read Online (HTML) | Download PDF

Show Abstract
The optical emission from polytetrafluoroethylene (PTFE) surfaces in a planar concentric metal-polymer-metal structure was investigated under ac electric field in vacuum. Two kinds of optical pattern were observed before the flashover; they were strongly dependent on the magnitude of applied voltage. At a lower applied voltage, the light emission was weak and uniform and was observed close to the edges of both electrodes. It may be considered as electroluminescence phenomena due to the radiative recombination of electrons and holes injected from the electrode into the polymer surface layer. With increase of the applied voltage, the optical emission became significantly strong and irregular, and its activity area gradually expanded from the inner electrode to the outer electrode. The accumulation of electrons injected is supposed to form a long-term negative space charge region away from the inner electrode. A strong modification of the local electric field near its border would result in the detrapping of trapped electrons at a critical applied voltage and hence cause forward/backward secondary electron emission on the surface of PTFE, accompanied by intense light emission and a wide luminescent area, and probably lead to the final surface flashover. It is concluded that the negative charge region is likely located around ∼2.6 mm from the inner electrode edge. © 2003 American Institute of Physics.
Show PACS
77.22.Jp Dielectric breakdown and space-charge effects
73.40.Rw Metal-insulator-metal structures
78.60.Fi Electroluminescence
Return to All Sections
Close

Google Calendar

ADVERTISEMENT

Go to AIP Home   © AIP Publishing LLC
close