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J. Appl. Phys. 93, 8385 (2003); http://dx.doi.org/10.1063/1.1543868 (3 pages)

Current-induced switching in low resistance magnetic tunnel junctions

Yaowen Liu1, Zongzhi Zhang1, Jianguo Wang2,3, P. P. Freitas2,3, and J. L. Martins2,3

1INESC Microsystems and Nanotechnologies, R. Alves Redol 9, 1000 Lisbon, Portugal
2INESC Microsystems and Nanotechnologies, R. Alves Redol 9
3Physics Department, Instituto Superior Tecnico, Avenue Rovisco Pais, 1000 Lisbon, Portugal

Current-induced magnetization switching (CIMS) in low resistance tunnel junctions is reported at critical current densities of 1.9×106 A/cm2 for tunnel junction areas ranging from 2 to 3 μm2, and junction resistances from 6 to 20 Ω μm2. Typical tunnel magnetic resistance values for these junctions range from 15% to 21% (measured in an external magnetic field) and 10% to 14% resistance changes are obtained by CIMS. Micromagnetic simulation indicates that vortex fields and spin transfer effects cannot fully account for the observed current-induced switching. Although able to explain the observed transition from a parallel or antiparallel state to a vortex state, it fails to explain the switch back to the original state, at a comparable but symmetrical critical current density. © 2003 American Institute of Physics.

© 2003 American Institute of Physics

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KEYWORDS and PACS

PACS

  • 85.70.Kh

    Magnetic thin film devices: magnetic heads (magnetoresistive, inductive, etc.); domain-motion devices, etc.

  • 75.60.Ej

    Magnetization curves, hysteresis, Barkhausen and related effects

  • 85.70.Ay

    Magnetic device characterization, design, and modeling

  • 85.75.-d

    Magnetoelectronics; spintronics: devices exploiting spin polarized transport or integrated magnetic fields

ARTICLE DATA

PUBLICATION DATA

ISSN

0021-8979 (print)  
1089-7550 (online)

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