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Journal of Applied Physics / Volume 92 / Issue 6 / ELECTRONIC STRUCTURE AND TRANSPORT (PACS 71-73)

J. Appl. Phys. 92, 3141 (2002); http://dx.doi.org/10.1063/1.1499524 (6 pages)

Comparison of a density functional theory and a Hartree treatment of silicon quantum dot

Johann Sée, Philippe Dollfus, and Sylvie Galdin

Institut d’Électronique Fondamentale (CNRS UMR 8622), Université Paris, XI 91405 Orsay, France

(Received 18 January 2002; accepted 17 June 2002)

This article presents a self-consistent Poisson–Schrödinger calculation based on either the Hartree or the density functional theory for silicon quantum dots surrounded by silicon dioxide. These models can treat any shape of confining potential and take into account the different effective masses and permittivities of the materials. The energy states and the equivalent capacitance of a single dot are then determined as a function of dot radius and number of confined electrons. Finally, the Hartree approach and the density functional theory are compared. © 2002 American Institute of Physics.

© 2002 American Institute of Physics

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KEYWORDS and PACS

Keywords

silicon, elemental semiconductors, semiconductor quantum dots, SCF calculations, density functional theory, Schrodinger equation, Poisson equation

PACS

  • 73.21.La

    Quantum dots

  • 71.15.Mb

    Density functional theory, local density approximation, gradient and other corrections

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.1499524

PUBLICATION DATA

ISSN

0021-8979 (print)  
1089-7550 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

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