• Volume/Page
  • Keyword
  • DOI
  • Citation
  • Advanced
   
 
 
 

Flickr Twitter UniPHY Group iResearch App Facebook

J. Appl. Phys. 92, 2916 (2002); http://dx.doi.org/10.1063/1.1499529 (7 pages)

Deposition kinetics on particles in a dusty plasma reactor

Jin Cao and Themis Matsoukas

Department of Chemical Engineering, 149 Fenske Laboratory, The Pennsylvania State University, University Park, Pennsylvania 16802

(Received 6 March 2002; accepted 15 June 2002)

We report on the use of dusty plasma chemical vapor deposition for the coating of micron and submicron sized particles. Particles are introduced into a capacitively coupled low-pressure plasma where they become charged and remain electrostatically confined over extended periods of time. Introduction of a hydrocarbon in the plasma results in the formation of a cross-linked solid (plasma polymer) which deposits on the particle surface in the form of a film. The thickness of the coating varies from 3 nm to more than several hundred nanometers and is found to be a linear function of time. The size distribution and the uniformity of deposition are studied as a function of the deposition time and particle size and the results are interpreted qualitatively via a surface deposition model. © 2002 American Institute of Physics.

© 2002 American Institute of Physics

RELATED DATABASES

To view database links for this article, you need to log in.

KEYWORDS and PACS

PACS

  • 52.77.Dq

    Plasma-based ion implantation and deposition

  • 52.27.Lw

    Dusty or complex plasmas; plasma crystals

  • 81.15.Gh

    Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)

  • 82.35.Gh

    Polymers on surfaces; adhesion

ARTICLE DATA

PUBLICATION DATA

ISSN

0021-8979 (print)  
1089-7550 (online)

For access to fully linked references, you need to log in.
    H. Hofmeister, J. Dutta, and H. Hofmann, Phys. Rev. B 54, 2856 (1996).

    D. Shi, S. X. Wang, W. J. van Ooij, L. M. Wang, J. Zhao, and Z. Yu, Appl. Phys. Lett. 78, 1243 (2001)APPLAB000078000009001243000001.

    G. M. Jellum, J. E. Daugherty, and D. B. Graves, J. Appl. Phys. 69, 6923 (1991)JAPIAU000069000010006923000001.

    M. S. Barnes, J. H. Keller, J. C. Forster, J. A. O'Neill, and D. K. Coultas, Phys. Rev. Lett. 68, 313 (1992).

    J. E. Daugherty, R. K. Porteous, and D. B. Graves, J. Appl. Phys. 73, 1617 (1993)JAPIAU000073000004001617000001.

    W. W. Stoffels, E. Stoffels, G. H. P. M. Swinkels, M. Boufnichel, and G. M. W. Kroesen, Phys. Rev. E 59, 2302 (1999).

    A. A. Fridman, L. Boufendi, T. Hbid, B. V. Potapkin, and A. Bouchoule, J. Appl. Phys. 79, 1303 (1996)JAPIAU000079000003001303000001.

    J. P. Boeuf, Phys. Rev. A 46, 7910 (1992).

    T. Matsoukas and M. Russell, J. Appl. Phys. 77, 4285 (1995)JAPIAU000077000009004285000001.


For access to citing articles, you need to log in.



Close
Google Calendar
ADVERTISEMENT

close