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Journal of Applied Physics / Volume 92 / Issue 11 / DIELECTRICS AND FERROELECTRICITY (PACS 77)

J. Appl. Phys. 92, 6739 (2002); http://dx.doi.org/10.1063/1.1515951 (4 pages)

Improvement in Al2O3 dielectric behavior by using ozone as an oxidant for the atomic layer deposition technique

J. B. Kim1, D. R. Kwon1, K. Chakrabarti1, Chongmu Lee1, K. Y. Oh2, and J. H. Lee3

1Department of Materials Science and Engineering, Inha University, 253 Younghyun-dong, Nam-Ku, Inchon 402-751, Republic of Korea
2Jusung Engineering Co. Ltd, 49 Neungpyeong-Ri, Opo-Eup, Kwangju-Gun, Kyunggi-Do 464-890, Republic of Korea
3Department of Ceramic Engineering, Yonsei University, 134 Sinchon-dong, Seodaemun-Ku, Seoul 120-749, Republic of Korea

(Received 14 May 2002; accepted 29 August 2002)

We have prepared Al2O3 films by the atomic layer deposition technique using trimethylaluminum as the precursor for aluminum and O3, instead of commonly used H2O, as an oxidant. We show that even without any postdeposition annealing or any preventive layer between the Al2O3 film and Si substrate to suppress the formation of metallic clusters, the Al2O3 films prepared using O3 have significantly less amount of defect states like Al–Al and OH bonds compared with those prepared by H2O. The films show device quality leakage characteristics, with Al2O3 film prepared with O3 showing a leakage current density one or two orders lower and a smaller flatband voltage shift than that of Al2O3 film prepared with H2O, demonstrating improved interface characteristics. The former also shows a very low wet etch rate. © 2002 American Institute of Physics.

© 2002 American Institute of Physics

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KEYWORDS and PACS

Keywords

alumina, dielectric thin films, insulating thin films, atomic layer epitaxial growth, annealing, bonds (chemical), leakage currents

PACS

  • 81.15.-z

    Methods of deposition of films and coatings; film growth and epitaxy

  • 73.61.Ng

    Insulators

  • 73.40.Qv

    Metal-insulator-semiconductor structures (including semiconductor-to-insulator)

  • 81.15.Gh

    Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)

  • 77.55.-g

    Dielectric thin films

  • 68.55.-a

    Thin film structure and morphology

  • 81.15.Hi

    Molecular, atomic, ion, and chemical beam epitaxy

  • 61.72.Cc

    Kinetics of defect formation and annealing

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.1515951

PUBLICATION DATA

ISSN

0021-8979 (print)  
1089-7550 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

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    References

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