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1 Mar 2002

Volume 91, Issue 5, pp. 2563-3485

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Geometrical confinement of a domain wall in a nanocontact between two NiFe wires

K. Miyake, K. Shigeto, K. Mibu, T. Shinjo, and T. Ono

J. Appl. Phys. 91, 3468 (2002); http://dx.doi.org/10.1063/1.1436552 (3 pages) | Cited 32 times

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A nanocontact structure (typically 22×34 nm2) between two NiFe wires was fabricated by an electron-beam lithography and a lift-off method, and the magnetoresistance was measured. The magnetization switching process was artificially controlled by engineering the sample geometry to realize a magnetic structure with a single domain wall (DW) trapped in the nanocontact area. This domain structure was confirmed by magnetic force microscopy observations. The magnetization rotation of 180° was realized within the nanocontact area. The contribution of the DW to the resistance was negative, which can be understood on the basis of anisotropic magnetoresistance. © 2002 American Institute of Physics.
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81.07.Lk Nanocontacts
81.16.Nd Micro- and nanolithography
81.07.Vb Quantum wires
75.75.-c Magnetic properties of nanostructures

Site-occupying behavior of boron in compensated p-type 4H–SiC grown by sublimation epitaxy

A. Kakanakova-Georgieva, R. Yakimova, M. K. Linnarsson, and E. Janzén

J. Appl. Phys. 91, 3471 (2002); http://dx.doi.org/10.1063/1.1433931 (3 pages) | Cited 4 times

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Results from electrical and optical measurements of boron in compensated p-type 4H–SiC layers doped with Al, N, and B are reported. The layers were produced by sublimation epitaxy and characterized by secondary ion mass spectrometry, capacitance–voltage, and cathodoluminescence techniques. The boron-related contribution to the net acceptor concentration in the layers as well as the boron-related emission at ∼505 nm are detected for various growth conditions. The effect of the concentrations of the attendant impurities Al and N, concentration ratio of Al to N atoms, and growth rate on the site-occupying behavior of boron in the layers is discussed. © 2002 American Institute of Physics.
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68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
81.15.Kk Vapor phase epitaxy; growth from vapor phase
78.66.Li Other semiconductors
73.61.Le Other inorganic semiconductors
61.72.up Other materials
73.20.Hb Impurity and defect levels; energy states of adsorbed species
78.40.Fy Semiconductors
78.60.Hk Cathodoluminescence, ionoluminescence

Controlling the electron tunneling through InAs self-assembled dots

R. J. A. Hill, A. Patanè, P. C. Main, M. Henini, L. Eaves, S. Tarucha, and D. G. Austing

J. Appl. Phys. 91, 3474 (2002); http://dx.doi.org/10.1063/1.1446226 (3 pages) | Cited 2 times

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We investigate electron tunneling through GaAs/(AlGa)As/GaAs, single-barrier tunnel diodes in which a layer of self-assembled InAs quantum dots is incorporated onto the center plane of the (AlGa)As tunnel barrier. We study the effect on the electrical conduction of substrate orientation and of the inclusion of thin GaAs cladding layers on either side of the dot layer. We find that the presence of the cladding layers increases the conduction. We attribute this to a raising of the energy of the electron states, probably due to the diffusion of Ga into the dots. Photoluminescence measurements confirm this hypothesis. We show that this effect can be used to tailor the transport characteristics for specific applications. © 2002 American Institute of Physics.
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73.63.Kv Quantum dots
81.07.Ta Quantum dots
73.21.La Quantum dots
81.05.Ea III-V semiconductors
78.67.Hc Quantum dots
73.61.Ey III-V semiconductors
78.55.Cr III-V semiconductors
78.66.Fd III-V semiconductors
85.30.Mn Junction breakdown and tunneling devices (including resonance tunneling devices)
73.40.Gk Tunneling

Experimental verification of guided modes in 60°-bent defect waveguides in AlGaAs-based air-bridge-type two-dimensional photonic crystal slabs

Y. Sugimoto, N. Ikeda, N. Carlsson, K. Asakawa, N. Kawai, and K. Inoue

J. Appl. Phys. 91, 3477 (2002); http://dx.doi.org/10.1063/1.1436554 (3 pages) | Cited 11 times

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Sixty-degree-bent defect waveguides (DWGs) in an AlGaAs-based air-bridge-type two-dimensional photonic crystal (2D PC) slab were fabricated, and the resulting optical transmission spectra and the plan-view image of the optical beam propagating along the bent DWG were measured in the wavelength range between 850 and 1100 nm. Using the two output ports of the stripe waveguides, one aligned to and another offset from the output edge of the bent DWG, the guided mode specific to the DWG and the slab mode in the defect-free PC slab were experimentally observed with the same sample. These results were verified using the calculated band structure and transmission spectra. © 2002 American Institute of Physics.
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42.79.Gn Optical waveguides and couplers
42.70.Qs Photonic bandgap materials

Nanocrystalline diamond formation during argon ion irradiation of graphite

Zhenxia Wang, Guoqing Yu, Liping Yu, Fuying Zhu, Dezhang Zhu, Hongjie Xu, and Meilling Ruan

J. Appl. Phys. 91, 3480 (2002); http://dx.doi.org/10.1063/1.1448392 (3 pages) | Cited 2 times

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In the present work, diamond nanoparticles with sizes of ∼2–70 nm have been produced by Ar+ ion irradiation at the fluence of ∼1022 cm−2. With the help of transmission electron microscope, electron diffraction, and Raman spectroscopy, these nanoparticles’ shape and size were determined and their crystal structure was also solved. From these results, our discussion, based on the viewpoint of beam-solid interaction, may be critical for understanding the growth process of nanocrystalline diamonds. © 2002 American Institute of Physics.
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81.05.U- Carbon/carbon-based materials
61.46.-w Structure of nanoscale materials
81.07.Bc Nanocrystalline materials
79.20.Rf Atomic, molecular, and ion beam impact and interactions with surfaces
61.80.Jh Ion radiation effects
78.30.Hv Other nonmetallic inorganics

Effect of the number of wells on optical and structural properties in InGaN quantum well structures grown by metalorganic chemical vapor deposition

H.-K. Yuh, E. Yoon, S. K. Shee, J. B. Lam, C. K. Choi, G. H. Gainer, G. H. Park, S. J. Hwang, and J. J. Song

J. Appl. Phys. 91, 3483 (2002); http://dx.doi.org/10.1063/1.1450051 (3 pages) | Cited 5 times

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High-quality InGaN quantum well (QW) structures with one, two, three, five, and seven wells were grown by metalorganic chemical vapor deposition. The effect of the number of InGaN QWs on the structural and optical properties was studied by high-resolution x-ray diffraction (HRXRD), atomic force microscopy, low excitation density photoluminescence (PL), high excitation density pulsed PL, and PL excitation (PLE). The 10 K PLE band edge of all the samples is almost same, but the 10 K PL peaks of the InGaN QWs initially blueshifts, and then redshifts as the number of wells increases. HRXRD reciprocal space mapping and high excitation pulsed PL show that this anomalous peak shift is due mainly to potential fluctuations, rather than the piezoelectric field. The degree of potential fluctuations varies with dislocation density, which could be affected by growth interruption, the deposition of strained layers, and the accumulated strain energy in InGaN QW structures. © 2002 American Institute of Physics.
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78.67.De Quantum wells
81.07.St Quantum wells
68.65.Fg Quantum wells
78.66.Fd III-V semiconductors
78.55.Cr III-V semiconductors
81.05.Ea III-V semiconductors
68.35.Ct Interface structure and roughness
68.49.Uv X-ray standing waves
68.37.Ps Atomic force microscopy (AFM)
61.72.Hh Indirect evidence of dislocations and other defects (resistivity, slip, creep, strains, internal friction, EPR, NMR, etc.)
61.72.Lk Linear defects: dislocations, disclinations
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