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15 May 2002

Volume 91, Issue 10, pp. 6227-8917

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Heating and cooling effect of giant magnetoresistive heads during writing operations

Eunkyu Jang, Geng Wang, Keung Youn Cho, and Hyung Lee

J. Appl. Phys. 91, 8769 (2002); http://dx.doi.org/10.1063/1.1456052 (3 pages) | Cited 6 times

Online Publication Date: 13 May 2002

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The temperature change of giant magnetoresistive (GMR) heads is studied at various write frequencies and write currents by measuring the dc resistance of GMR heads during writing operations. To investigate the effect of a disk on the temperature rise, the test was performed at two different conditions: first, head loaded on a disk, and second, head unloaded. There are five kinds of heating sources of spin valve (SV) heads during writings; (1) dc interconnect heating, (2) dc write coil heating, (3) ac interconnect heating, (4) write-to-read cross-talk of interconnect, and (5) ac write coil heating. The primary cause for the temperature rise of the SV head during writing is write-to-read cross-talk of interconnect, when the head is loaded on a disk. When the head is unloaded, dc or ac heating of the write coil is the main cause of temperature rise of the SV head. It was found that a disk plays an important role in the temperature change of GMR heads during writing as a cooling source. The disk hardly reduces the heat generated by read bias current and cross-talk induced current, but it significantly reduces the heat from the dc or ac write coil heating. © 2002 American Institute of Physics.
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85.70.Kh Magnetic thin film devices: magnetic heads (magnetoresistive, inductive, etc.); domain-motion devices, etc.

0.1-micron-wide sandwich flux guide and free layer for spin dependent tunneling head sensors

A. V. Pohm and J. M. Anderson

J. Appl. Phys. 91, 8772 (2002); http://dx.doi.org/10.1063/1.1456053 (2 pages) | Cited 4 times

Online Publication Date: 13 May 2002

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The performance of a 0.1-μm-wide, sandwich flux guide was analyzed for a 200-Å-thick media with a remnant magnetization of 400 emu/cm3 and a guide to media distance of 200 Å. The head was assumed to have a 0.08-μm gap, and the sensor was assumed to have 35% flux capture.1 For a near optimum 0.1×0.2 μm2 sensor beginning 500 Å into the gap, with 40% giant magnetoresistance, a resistance of 2500 Ω, and a 150 mV operating voltage, the calculated signal output is 8 mV. For a bandwidth of 1 GHz, the signal exceeds the Johnson noise by 31 dB. © 2002 American Institute of Physics.
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85.70.Kh Magnetic thin film devices: magnetic heads (magnetoresistive, inductive, etc.); domain-motion devices, etc.
85.75.Ss Magnetic field sensors using spin polarized transport

Nano-oxide-layer specular spin valve heads with synthetic pinned layer: Head performance and reliability

N. Hasegawa, F. Koike, K. Ikarashi, M. Ishizone, M. Kawamura, Y. Nakazawa, A. Takahashi, H. Tomita, H. Iwasaki, and M. Sahashi

J. Appl. Phys. 91, 8774 (2002); http://dx.doi.org/10.1063/1.1456054 (3 pages) | Cited 7 times

Online Publication Date: 13 May 2002

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To implement the specular nano-oxide-layer (NOL) spin valve (SV) heads for use in practical applications, it is key to simultaneously achieve a good specular effect of the NOL inserted in the synthetic ferrimagnet pinned layer (i.e., high magnetoresistance MR performance) and a strong pinning field through the NOL. By using CoFe+X as a substance to be subjected to oxidation, we obtained the NOL specular SV films simultaneously achieving a high MR ratio of 17%–18% and a high pinning field of 1100–1500 Oe. Narrow track (0.12 μm) heads were fabricated and they showed a high sensitivity of 10 mV/μm. Several reliability tests were done both at the sheet film level and the actual head level. The oxygen inside NOL was found to be stable up to 350 °C, and pinned layer magnetization canting after orthogonal field annealing was found to be almost the same as today’s non-NOL SV films. An electrostatic discharge test and accelerated lifetime test were also performed and NOL specular heads were demonstrated to have almost the same robustness as today’s non-NOL heads.© 2002 American Institute of Physics.
Show PACS
85.70.Kh Magnetic thin film devices: magnetic heads (magnetoresistive, inductive, etc.); domain-motion devices, etc.
85.75.Bb Magnetic memory using giant magnetoresistance
75.47.De Giant magnetoresistance
75.50.Gg Ferrimagnetics
75.25.-j Spin arrangements in magnetically ordered materials (including neutron and spin-polarized electron studies, synchrotron-source x-ray scattering, etc.)
75.60.Ej Magnetization curves, hysteresis, Barkhausen and related effects
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