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1 Nov 2001

Volume 90, Issue 9, pp. 4307-4883

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Evidence for voltage drops at misaligned wafer-bonded interfaces of AlGaInP light-emitting diodes by electrostatic force microscopy

James J. O’Shea, Michael D. Camras, Dawnelle Wynne, and Gloria E. Höfler

J. Appl. Phys. 90, 4791 (2001); http://dx.doi.org/10.1063/1.1406549 (5 pages) | Cited 3 times

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Electrostatic force microscopy (EFM) with phase detection has been applied to cleaved cross sections of wafer-bonded transparent substrate (TS) AlGaInP light-emitting diode (LED) structures. EFM was performed with the LED under active bias to image the voltage drops across the device layers. Measurements on a nonwafer-bonded, absorbing substrate (AS) AlGaInP LED wafer, showed a voltage drop only at the p–n junction. A TS wafer with high forward voltage (Vf ) showed a much larger voltage drop at the wafer-bonded interface, compared with a normal TS LED wafer. Secondary ion mass spectrometry profiles of these wafers revealed ∼1×1013 cm−2 of carbon at the bonded interface in the high Vf sample, compared to ∼3×1012 cm−2 in the normal wafer. The unwanted voltage drop at the bonded interface was likely caused by a combination of carbon acting as a p-type dopant and the presence of interface states due to a ∼3° in-plane rotational misalignment at wafer bonding. © 2001 American Institute of Physics.
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85.60.Jb Light-emitting devices
79.20.Rf Atomic, molecular, and ion beam impact and interactions with surfaces

Fabrication and characterization of epitaxial NbN/MgO/NbN Josephson tunnel junctions

Akira Kawakami, Zhen Wang, and Shigehito Miki

J. Appl. Phys. 90, 4796 (2001); http://dx.doi.org/10.1063/1.1409583 (4 pages) | Cited 23 times

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We fabricated epitaxial NbN/MgO/NbN Josephson tunnel junctions with good tunneling characteristics in the range of JC=0.2–70 kA/cm2. The counter and base NbN electrodes of the tunnel junctions had the same TC and 20 K resistivity at about 15.7 K and 60 μΩ-cm, respectively. X-ray analysis showed that all the layers that formed the tunnel junctions grew epitaxially. In the range of JC=0.2–15 kA/cm2, the tunnel junctions fabricated had large gap voltages (5.6–5.9 mV), narrow gap widths (less than 0.1 mV), high ICRN products (2.6–3.8 mV), and small subgap leakage current (Vm=40–96 mV). © 2001 American Institute of Physics.
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85.25.Cp Josephson devices
74.50.+r Tunneling phenomena; Josephson effects

Electrical effects of plasma enhanced chemical vapor deposition of SiNx on GaAs Schottky rectifiers

B. Luo, J. W. Johnson, F. Ren, K. H. Baik, and S. J. Pearton

J. Appl. Phys. 90, 4800 (2001); http://dx.doi.org/10.1063/1.1410323 (5 pages)

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The diode ideality factor, reverse breakdown voltage, and forward current characteristic were used to measure the effect on electric performance of GaAs rectifiers deposited with thin films of SiNx. Over a broad range of deposition conditions there were minimal changes (<10%) in breakdown voltage and the cause was hydrogen passivation of Si dopants in the GaAs. Ion-induced damage did not appear to play a significant role in the results. The ideality factors and forward leakage currents were essentially unchanged by the SiNx deposition indicating that the plasma exposure did not create defects states around the periphery of the Schottky contact. © 2001 American Institute of Physics.
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85.30.Kk Junction diodes
81.65.Rv Passivation
52.77.Dq Plasma-based ion implantation and deposition
85.30.De Semiconductor-device characterization, design, and modeling
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
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