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1 May 2001

Volume 89, Issue 9, pp. 4689-5231

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Design and fabrication of organic complementary circuits

B. K. Crone, A. Dodabalapur, R. Sarpeshkar, R. W. Filas, Y.-Y. Lin, Z. Bao, J. H. O’Neill, W. Li, and H. E. Katz

J. Appl. Phys. 89, 5125 (2001); http://dx.doi.org/10.1063/1.1362635 (8 pages) | Cited 83 times

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We have used a simple model description of single field effect transistor characteristics to design organic complementary circuits ranging in complexity from simple inverters through 48-stage shift registers and three-bit row decoders. The circuits were fabricated using standard silicon photolithographic techniques to define the metal, insulator, and interconnect levels. The ohmic source and drain contacts and part of the interconnect metallization were formed by electroless/immersion deposition of Ni-P/Au on prepatterned TiN. The n-type and p-type organic semicondcutors were evaporated onto these substrates to complete the circuits. Measured circuit characteristics were in reasonable agreement with simulations based on the simple device model. © 2001 American Institute of Physics.
Show PACS
85.65.+h Molecular electronic devices
85.40.Bh Computer-aided design of microcircuits; layout and modeling
85.40.Ls Metallization, contacts, interconnects; device isolation
85.30.Tv Field effect devices
81.15.Pq Electrodeposition, electroplating
85.30.De Semiconductor-device characterization, design, and modeling
84.30.Bv Circuit theory
85.40.Hp Lithography, masks and pattern transfer

Electrical properties of shallow p+-n junction using boron-doped Si1−xGex layer deposited by ultrahigh vacuum chemical molecular epitaxy

Hsiang-Jen Huang, Kun-Ming Chen, Chun-Yen Chang, Tien-Sheng Chao, and Tiao Yuan Huang

J. Appl. Phys. 89, 5133 (2001); http://dx.doi.org/10.1063/1.1321022 (5 pages) | Cited 2 times

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Strained boron-doped Si1−xGex layers with different Ge mole fractions were selectively deposited by ultrahigh vacuum chemical molecular epitaxy to form shallow p+-n junction suitable for raised source/drain metal–oxide–semiconductor field effect transistor applications. Detailed electrical characterizations were performed. Our results show that the reverse leakage current could be optimized by a rapid thermal annealing at 950 °C for 20 s, and a near perfect forward ideality factor (i.e., <1.01) is obtained for the p+-n Si1−xGex/Si junction. By analyzing the periphery and area leakage current components of p+-n Si1−xGex/Si junctions with various perimeter lengths and areas, the degree of misfit dislocations and undercut effect were studied. The specific contact resistance was found to decrease as Ge mole fraction increases. Junction depth measurements also show that the junction depth decreases monotonically with increasing Ge mole fraction. The reduced B diffusion constant is attributed to the increasing Ge gradient in the transition region. © 2001 American Institute of Physics.
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73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
61.72.Cc Kinetics of defect formation and annealing
61.80.Ba Ultraviolet, visible, and infrared radiation effects (including laser radiation)
61.82.Fk Semiconductors
73.40.Cg Contact resistance, contact potential
85.30.Tv Field effect devices

Probing diffusion barrier integrity on porous silica low-k thin films using positron annihilation lifetime spectroscopy

Jia-Ning Sun, David W. Gidley, Terry L. Dull, William E. Frieze, Albert F. Yee, E. Todd Ryan, Simon Lin, and Jeff Wetzel

J. Appl. Phys. 89, 5138 (2001); http://dx.doi.org/10.1063/1.1360704 (7 pages) | Cited 27 times

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The technique of positron annihilation lifetime spectroscopy (PALS) has been used to investigate the continuity and thermal stability of thin barrier layers designed to prevent Cu atom diffusion into porous silica, low-dielectric constant (k) films. Nanoglass™ K2.2-A10C (A10C), a porous organosilicate film, is determined to have interconnected pores with an average tubular-pore diameter of (6.9 ± 0.4) nm. Cu deposited directly on the A10C films is observed to diffuse into the porous structure. The minimum necessary barrier thickness for stable continuity of Ta and TaN layers deposited on A10C is determined by detecting the signal of positronium (Ps) escaping into vacuum. It is found that the 25 nm thick layers do not form continuous barriers. This is confirmed by the presence of holes observed in such films using a transmission electron microscope. Although 35 nm and 45 nm Ta and TaN layers perform effectively at room temperature as Ps barriers, only the Ta-capped samples are able to withstand heat treatments up to 500 °C without breakdown or penetration into the porous film. TaN interdiffusion into the silica pores is indicated by the reduction of the Ps lifetime after high annealing temperatures. The validity of using Ps diffusion to test barrier layers designed to inhibit Cu diffusion is discussed. The procedures to standardize the testing of barrier layer integrity and thermal stability using PALS are proposed. Extension to probing barrier layers in realistic vias and trenches should be straightforward. © 2001 American Institute of Physics.
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61.43.Gt Powders, porous materials
81.05.Rm Porous materials; granular materials
68.35.Fx Diffusion; interface formation
78.70.Bj Positron annihilation
77.22.Ch Permittivity (dielectric function)

Characteristics of asymmetric superconducting quantum interference devices

G. Testa, E. Sarnelli, S. Pagano, C. R. Calidonna, and M. Mango Furnari

J. Appl. Phys. 89, 5145 (2001); http://dx.doi.org/10.1063/1.1360219 (6 pages) | Cited 6 times

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Direct current-superconducting quantum interference devices (SQUIDs) characterized by asymmetric Josephson junctions have never been used for applications. In order to demonstrate their potential advantages, a throughout numerical analysis of different asymmetric configurations has been carried out. A damping resistance has been included in the SQUID circuit and the thermal noise associated with junction and damping resistances has been considered in the numerical model. Magnetic modulations and flux noise spectral densities have been computed as a function of many parameters (bias current, asymmetry, SQUID inductance, and damping resistance) and the performance of symmetric and asymmetric devices have been compared. The results show that, by properly optimizing the SQUID design, asymmetric SQUIDs are characterized by higher magnetic flux to voltage transfer coefficient and lower flux noise. As a result, asymmetric configurations can be very useful in all the applications where high sensitivity is required. © 2001 American Institute of Physics.
Show PACS
85.25.Dq Superconducting quantum interference devices (SQUIDs)
74.50.+r Tunneling phenomena; Josephson effects
85.25.Cp Josephson devices
74.40.-n Fluctuation phenomena
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