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15 Apr 2001

Volume 89, Issue 8, pp. 4209-4678

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Characterization of deep levels in InGaP grown by compound-source molecular beam epitaxy

J. H. Kim, S. J. Jo, J. W. Kim, and J.-I. Song

J. Appl. Phys. 89, 4407 (2001); http://dx.doi.org/10.1063/1.1353559 (3 pages) | Cited 5 times

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Deep levels in Si-doped In0.49Ga0.51P grown by compound-source molecular beam epitaxy (MBE) have been investigated by deep level transient spectroscopy. In0.49Ga0.51P samples were grown by compound-source MBE with V/III ratios of 4, 10, and 17. Depending upon the V/III ratio three major deep levels with activation energies of 0.26±0.02, 0.36±0.02, and 0.82±0.05 eV were observed. The effect of thermal annealing on the behavior of deep levels was also investigated. The deep levels in InGaP grown by compound-source MBE showed behavior of phosphorus antisites and related complexes unlike those found in solid-source MBE-grown InGaP that showed behavior of phosphorus vacancies and related complexes. Si-doped InGaP layers grown with a V/III ratio of 4 showed trap concentration and capture cross section as low as 1.38×1014 cm−3 and 2.9×10−16 cm2, respectively. The results indicate the potential of InGaP grown by compound-source MBE for use in improved low-frequency noise applications. © 2001 American Institute of Physics.
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71.55.Eq III-V semiconductors
61.72.Cc Kinetics of defect formation and annealing
61.72.J- Point defects and defect clusters
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.

Diffusion photovoltage in poly(p -phenylenevinylene)

V. Duzhko, Th. Dittrich, B. Kamenev, V. Yu. Timoshenko, and W. Brütting

J. Appl. Phys. 89, 4410 (2001); http://dx.doi.org/10.1063/1.1355721 (3 pages) | Cited 9 times

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Photovoltage phenomena in poly(p-phenylenevinylene) (PPV) are investigated under pulsed laser illumination. The photovoltage transients are strongly retarded in time depending on sample thickness, laser intensity, and bias illumination. It is shown that the photovoltage in PPV originates from separation of excess electrons and holes due to their concentration gradient and different diffusion coefficients (diffusion photovoltage). The diffusion coefficient of excess holes is found to be on the order of 1×10−6 cm2/s and it increases with increasing excitation intensity and intensity of bias illumination. The diffusion coefficient of excess electrons is about 1–2 orders of magnitude smaller than for excess holes. © 2001 American Institute of Physics.
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72.15.Nj Collective modes (e.g., in one-dimensional conductors)
72.80.Le Polymers; organic compounds (including organic semiconductors)
72.40.+w Photoconduction and photovoltaic effects

Fabrication and characterization of pulse laser deposited Ni2Si Ohmic contacts on n-SiC for high power and high temperature device applications

M. W. Cole, P. C. Joshi, and M. Ervin

J. Appl. Phys. 89, 4413 (2001); http://dx.doi.org/10.1063/1.1357777 (4 pages) | Cited 5 times

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Ni2Si Ohmic contacts were fabricated via pulsed laser deposition on n-SiC. The contacts electrical, structural, compositional, and surface morphological properties were investigated as a function of annealing temperatures ranging from 700 to 950 °C. The as-deposited and 700 °C annealed contacts were non-Ohmic. Annealing at 950 °C yielded excellent Ohmic behavior, an abrupt void free interface, and a smooth surface morphology. No residual carbon was present within the contact metallization or at the contact-SiC interface and the contact showed no appreciable thickness increase as a result of the annealing process. Our results demonstrate that aside from maintaining the desirable electrical integrity associated with Ni and Ni/Si Ohmic contacts, the Ni2Si Ohmic contacts possessed improved interfacial, compositional, microstructural, and surface properties which are required for reliable high temperature and high power device operation. © 2001 American Institute of Physics.
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73.40.Ns Metal-nonmetal contacts
81.15.Fg Pulsed laser ablation deposition
81.05.Bx Metals, semimetals, and alloys
61.72.Cc Kinetics of defect formation and annealing
85.40.Ls Metallization, contacts, interconnects; device isolation
68.35.B- Structure of clean surfaces (and surface reconstruction)
68.35.Ct Interface structure and roughness

Electrical properties of fluorinated amorphous carbon films

N. Biswas, H. R. Harris, X. Wang, G. Celebi, H. Temkin, and S. Gangopadhyay

J. Appl. Phys. 89, 4417 (2001); http://dx.doi.org/10.1063/1.1353804 (5 pages) | Cited 14 times

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We have studied the capacitance–voltage (C–V), conductance–voltage (G–V), and current–voltage characteristics of fluorinated amorphous carbon (a-C:Fx) films using metal/a-C:Fx/Si and metal/a-C:Fx/metal structures, respectively. Samples annealed in a vacuum were also studied. The C–V curves of the as-deposited sample are stretched about the voltage axis. Interface state density of 4.1×1011 cm−2 eV−1 at the midgap was calculated. Annealing the sample deposited on Si in a vacuum caused more frequency dispersion in the C–V and G–V curves, probably due to the diffusion of carbon into silicon. The bulk density of states for samples deposited on metal, measured by space-charge-limited current technique, decreased from 4×1018 eV−1 cm−3 for the as-deposited sample, to 7×1017 eV−1 cm−3 for the annealed sample. © 2001 American Institute of Physics.
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73.61.Cw Elemental semiconductors
73.40.Sx Metal-semiconductor-metal structures
72.80.Cw Elemental semiconductors
72.80.Ng Disordered solids
73.61.Jc Amorphous semiconductors; glasses
61.72.Cc Kinetics of defect formation and annealing
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
68.35.Fx Diffusion; interface formation
72.20.Ht High-field and nonlinear effects
73.50.Fq High-field and nonlinear effects

Carrier transport in amorphous SiC/crystalline silicon heterojunctions

A. N. Nazarov, Ya. N. Vovk, V. S. Lysenko, V. I. Turchanikov, V. A. Scryshevskii, and S. Ashok

J. Appl. Phys. 89, 4422 (2001); http://dx.doi.org/10.1063/1.1355698 (7 pages) | Cited 4 times

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Charge carrier transport in chemical vapor-deposited amorphous SiC/p-type crystalline Si heterostructures has been studied over the temperature range 80–400 K, using current–voltage (I–V), current–temperature (I–T), capacitance–voltage (C–V), and capacitance relaxation (C–t) characteristics. These heterojunctions exhibit high breakdown voltages (230 V) and a diode rectification ratio of 103 at ±0.5 V. At low temperatures (80–120 K) the a-SiC behaves like a dielectric, and the interface built-in voltage can be determined from the capacitance–voltage plot. The corresponding low forward bias current flow is limited by variable-range electron hopping conductivity at Fermi level in the a-SiC layer. At increasing temperature and forward bias voltage, an additional hole current component is found with the transport governed by a multistep tunneling hole emission process through the a-SiC/c-Si heterobarrier. At still higher forward bias voltages (>0.8 V), space-charge-limited hole conduction in the presence of traps in the a-SiC bulk limits transport. © 2001 American Institute of Physics.
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73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
81.05.Cy Elemental semiconductors
81.05.Gc Amorphous semiconductors
73.20.At Surface states, band structure, electron density of states
71.23.Cq Amorphous semiconductors, metallic glasses, glasses
73.61.Jc Amorphous semiconductors; glasses
71.20.Mq Elemental semiconductors
71.55.Cn Elemental semiconductors
73.61.Cw Elemental semiconductors
71.55.Jv Disordered structures; amorphous and glassy solids
73.40.Ei Rectification
72.20.Ht High-field and nonlinear effects
73.50.Fq High-field and nonlinear effects
72.20.Ee Mobility edges; hopping transport
73.50.Dn Low-field transport and mobility; piezoresistance
77.22.Jp Dielectric breakdown and space-charge effects
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
73.50.Gr Charge carriers: generation, recombination, lifetime, trapping, mean free paths

Compensation of charge fluctuations in quantum wells with dual tunneling and photon-assisted escape paths

Danhong Huang, Anjali Singh, D. A. Cardimona, and Christian Morath

J. Appl. Phys. 89, 4429 (2001); http://dx.doi.org/10.1063/1.1351867 (9 pages) | Cited 3 times

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In our previous article [D. H. Huang, A. Singh, and D. A. Cardimona, J. Appl. Phys. 87, 2427 (2000)], we explained the experimentally observed zero-bias residual tunneling current [A. Singh and D. A. Cardimona, Opt. Eng. 38, 1424 (1999)] in quantum-well photodetectors biased by an ac voltage. In this article, we extend our theory to include the photoemission current and reproduce our recent findings on the dynamical drop of photoresponsivity Rph(t) from its static value Rph0 in quantum-well photodetectors as a function of the chopping frequency of the incident optical flux. In this theory, we derive a dynamical equation for a nonadiabatic space-charge field Ena(t) in the presence of an applied electric field Eb(t) and an incident optical flux Φop(t). From it, a compensation of the charge fluctuations in quantum wells is predicted as a result of dual tunneling and photon-assisted escaping paths. We also find a suppression of the nonadiabatic deviation of Rph(t) from Rph0 due to a charge-depletion effect in the quantum wells. © 2001 American Institute of Physics.
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73.63.Hs Quantum wells
73.21.Fg Quantum wells
85.35.Be Quantum well devices (quantum dots, quantum wires, etc.)
73.40.Gk Tunneling
85.60.Gz Photodetectors (including infrared and CCD detectors)
85.30.De Semiconductor-device characterization, design, and modeling
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