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1 Mar 2001

Volume 89, Issue 5, pp. 2511-3071

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Ionized physical vapor deposition of Cu on 300 mm wafers: A modeling study

Shahid Rauf, Peter L. G. Ventzek, and Valli Arunachalam

J. Appl. Phys. 89, 2525 (2001); http://dx.doi.org/10.1063/1.1345519 (10 pages) | Cited 6 times

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A two-dimensional model has been used to understand the physics and process engineering issues associated with a conceptual 300 mm Cu internal-coil ionized physical vapor deposition reactor. It has been found that inductive coupling from the coil is the primary source of plasma production. Since the coil is in direct contact with the plasma, a significant fraction of the coil power is deposited in the gas capacitively as well. This results in sputtering of the Cu coil, which tends to improve Cu flux uniformity at the outer edges of the wafer. Since the Cu ionization threshold is much lower than Ar, Cu+ density is comparable to Ar+ density even though ground state Cu density is much smaller than Ar. Significant fraction of the neutral Cu flux to the wafer is in the metastable or athermal state. The effects of several actuators, reactor dimensions, and buffer gas on important plasma and process quantities have also been investigated. Electron density in the reactor and Cu ionization fraction increases with increasing total coil power because of enhanced ionization. Total coil power however does not affect the Cu density appreciably, except near the coil where enhanced coil sputtering increases the Cu density. Decrease in dc target voltage with increasing coil power decreases Cu+ loss to the target and results in an increase in total Cu flux to the wafer. Electron and Cu density in the reactor increase with increasing dc target power. This is due to enhancement in target sputtering and consequent ionization of the sputtered Cu. While this increases the total Cu flux to the wafer, ionization fraction is not affected much. It is demonstrated that uniformity of Cu flux to the wafer and ionization fraction can be controlled by means of the terminating capacitor at the coil. Decreasing the terminating capacitance increases the coil voltage, enhances coil sputtering and enhances Cu flux toward the outer edges of the wafer. This, however, decreases the amount of power that is transferred to the plasma inductively, reducing the ionization efficiency. Increasing the coil–wafer distance results in fewer sputtered Cu atoms being ionized as the target–coil distance becomes smaller than the mean free path for thermalization of hot sputtered Cu atoms. Also, one can control the ionization fraction of Cu flux to the wafer by replacing Ar by Ne or Xe, without significantly impacting the total Cu flux. © 2001 American Institute of Physics.
Show PACS
52.77.Dq Plasma-based ion implantation and deposition
81.15.Cd Deposition by sputtering
52.25.-b Plasma properties
85.40.Ls Metallization, contacts, interconnects; device isolation

Ionized physical vapor deposition of Cu using a mixture of rare gases

Shahid Rauf and Peter L. G. Ventzek

J. Appl. Phys. 89, 2535 (2001); http://dx.doi.org/10.1063/1.1345520 (4 pages) | Cited 2 times

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Ionized physical vapor deposition of Cu in a mixture of three rare gases (He–Ar–Xe) is explored in this article. Results indicate that total Cu flux to the wafer, ionization fraction of Cu at the wafer, and ratio of total effective ion flux to total Cu flux increase with increasing Xe concentration in the gas mixture. This is because of enhancement of electron density and Xe+ ions having a larger sputter yield on Cu than other ions. Increase in He concentration decreases the ionization fraction due to a lower electron density. However, Cu flux to the wafer increases because He is less effective in thermalizing the hot sputtered neutrals. One major consequence of these trends is that one can independently control total Cu flux to the wafer (corresponding to deposition rate) and ionization fraction (a major factor controlling the deposition profile) over a wide range by means of the buffer gas composition. © 2001 American Institute of Physics.
Show PACS
52.77.Dq Plasma-based ion implantation and deposition
85.40.Ls Metallization, contacts, interconnects; device isolation
52.25.-b Plasma properties
81.15.Cd Deposition by sputtering

Temporal behavior of the wall voltage in a surface-type alternating current plasma display panel cell using laser induced fluorescence spectroscopy

Jung Hun Kim, Jun Hak Lee, Ki-Woong Whang, and Young Wook Choi

J. Appl. Phys. 89, 2539 (2001); http://dx.doi.org/10.1063/1.1343893 (4 pages) | Cited 16 times

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Electric fields were measured using laser induced fluorescence spectroscopy and the wall voltage was estimated from the measured electric fields in a surface-type alternating current plasma display panel cell with a helium discharge (100 Torr) driven by square sustaining pulses. The wall voltage showed very complicated, temporally dynamic behavior. The polarity of the wall voltage changed rapidly as soon as the plasma was ignited, and its magnitude continuously increased due to the continuous injection of charged particles onto the dielectric surface from the afterglow plasma during the rest of the pulse-on period. When there was a self-erasing discharge at the instant of the pulse turn-off, the wall voltage dropped sharply by about 110 V and decreased continuously owing to the diffusion-induced charge redistribution or leakage. The decay rate of the wall voltage during the pulse-off period was very dependent on the surface condition of the protecting layer of the dielectric. © 2001 American Institute of Physics.
Show PACS
85.60.Pg Display systems
52.75.-d Plasma devices
52.70.Kz Optical (ultraviolet, visible, infrared) measurements
52.40.Hf Plasma-material interactions; boundary layer effects
52.25.Fi Transport properties

Mass spectrometric studies of a CH4/H2 microwave plasma under diamond deposition conditions

Toshihiro Fujii and Michael Kareev

J. Appl. Phys. 89, 2543 (2001); http://dx.doi.org/10.1063/1.1346655 (4 pages) | Cited 17 times

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We report on mass spectroscopic measurements of species originating from a microwave (MW) discharge plasma under simulated diamond deposition conditions. The plasma is produced in a 30 W MW flow tube through which flows a gas mixture of about 1% methane admixed in hydrogen. Plasma composition was investigated as a function of gas component ratio by Li+-ion attachment mass spectrometry. C, C2, C2H, C2H2, and C2H4, together with the free-radical species of C2H3 and C2H5, were observed on the mass spectra as Li+-ion adducts. Atomic carbon was the most abundant species, suggesting an important role for atomic carbons in diamond film growth. © 2001 American Institute of Physics.
Show PACS
52.70.Nc Particle measurements
52.80.Pi High-frequency and RF discharges
52.77.Dq Plasma-based ion implantation and deposition
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
81.05.U- Carbon/carbon-based materials
81.05.Cy Elemental semiconductors
82.33.Xj Plasma reactions (including flowing afterglow and electric discharges)
82.33.Ya Chemistry of MOCVD and other vapor deposition methods
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