Improved refractive index formulas for the AlxGa1−xN and InyGa1−yN alloys

Laws, G. M.; Larkins, E. C.; Harrison, I.; Molloy, C.; Somerford, D.

doi:doi:10.1063/1.1320007

Volume/Page
Keyword
DOI
Citation
Advanced

Volume: Page/Article:

Search Content Type

article doi:

Citation:

Nonspecular x-ray reflectivity study of roughness scaling in Si/Mo multilayers

The interfacial roughness and lateral correlation length of a series of Si/Mo multilayers with bilayer period 69 Å and number of bilayers ranging from 5 to 40 have been characterized by diffuse x-ray scattering. Superlattice peaks are preserved in offset radial scans indicating a high degree of conformality in the roughness. The lateral correlation length ξ increases with total film thickness h as ξ∼h0.55; however, the magnitude of the roughness is approximately 2 Å for all film thicknesses, in ...

Strain state in GaN epilayers from optical experiments

The intrinsic optical properties of GaN thin epilayers grown on a sapphire substrate and by Mg-enhanced lateral overgrowth (ELO) are studied as a function of temperature (from 20 up to 250 K) by means of photoluminescence excitation spectroscopy. The comparison between the experimental and calculated results allows us to determine the strain state of the GaN layers. At low temperature (T=20 K) the strain is stronger in the ELO epilayers than in the GaN layers grown on sapphire, but, contrary to ...

A detailed understanding of the nitride refractive indices is essential for the modeling and design of III–N laser structures. In this article, we report on the assessment of the refractive index data available for the nitride alloys and present formulas for evaluating the refractive indices for variations in both composition and photon energy. For Al_xGa_1−xN, an expression is given which fits well to experimental data below x<0.38, sufficient for the molefractions found in the cladding layers of III–N lasers. Due to the almost complete lack of experimental refractive index data for In_yGa_1−yN, we propose an expression to give a first-order approximation for the refractive index. © 2001 American Institute of Physics.

RELATED DATABASES

To view database links for this article, you need to log in.

KEYWORDS and PACS

Keywords

refractive index, III-V semiconductors, wide band gap semiconductors, semiconductor lasers, gallium compounds, aluminium compounds, indium compounds

PACS

78.20.Ci

Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
42.55.Px

Semiconductor lasers; laser diodes