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1 Jan 2001

Volume 89, Issue 1, pp. 1-812

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Relaxor behavior of La-modified (Pb0.75Ba0.25)(Zr0.70Ti0.30)O3 ceramics

M. Adamczyk, Z. Ujma, and J. Hańderek

J. Appl. Phys. 89, 542 (2001); http://dx.doi.org/10.1063/1.1328058 (6 pages) | Cited 15 times

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Strong influence of the lanthanum (La) admixture added to the lead–barium–zirconate–titanate (PBZT) ceramics of a chosen composition (Ba/Zr/Ti-25/70/30) on grain structure, electric conductivity, as well as dielectric and pyroelectric properties was confirmed. The La-modified ceramics exhibit classical relaxor ferroelectric behavior similar to other complex lead perovskites such as lead–lanthanum–zirconate–titanate-type ceramics. Additional anomalies in ϵ(T) curves in low frequency range were observed in the paraelectric phase for undoped ceramics. These anomalies and some disturbances in regularities typical for the relaxor ferroelectric behavior in the vicinity of diffuse ferroelectric–paraelectric phase transition in undoped PBZT ceramics are eliminated by the La admixture, which reduces the p-type electric conductivity by three orders of magnitude. An attempt at a qualitative explanation is given in the article. © 2001 American Institute of Physics.
Show PACS
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.22.Ch Permittivity (dielectric function)
77.22.Gm Dielectric loss and relaxation
77.80.B- Phase transitions and Curie point

Lifetime of ferroelectric Pb(Zr, Ti)O3 ceramic cathodes with high current density

M. Einat, D. Shur, E. Jerby, and G. Rosenman

J. Appl. Phys. 89, 548 (2001); http://dx.doi.org/10.1063/1.1329350 (5 pages) | Cited 10 times

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Electron emission from ferroelectric cathodes is investigated, it is commonly suggested as an electron source for different applications due to its special characteristics such as high current density, easy treatment, and operation. In this experimental research, a lifetime of lead zirconate-titanate ceramic cathode with composition related to a ferroelectric phase was studied. The strong plasma emission from the cathode was excited in a nonreversal (nonswitching) mode by application of unipolar high stress. Severe damage to the cathodes was observed, especially in a high repetition rate. An upper limit of the lifetime of the ferroelectric cathode with plasma-induced emission was estimated at about ∼106 pulses of ∼200 ns each at ∼100 Hz repetition rate. Possible applications of the limited lifetime ferroelectric cathode are discussed. © 2001 American Institute of Physics.
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77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.80.-e Ferroelectricity and antiferroelectricity
79.70.+q Field emission, ionization, evaporation, and desorption

Three-domain architecture of stress-free epitaxial ferroelectric films

A. L. Roytburd, S. P. Alpay, L. A. Bendersky, V. Nagarajan, and R. Ramesh

J. Appl. Phys. 89, 553 (2001); http://dx.doi.org/10.1063/1.1328781 (4 pages) | Cited 53 times

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Epitaxial ferroelectric films undergoing a cubic-tetragonal phase transformation relax internal stresses due to the structural phase transformation and the difference in the thermal expansion coefficients of the film and the substrate by forming polydomain structures. The most commonly observed polydomain structure is the c/a/c/a polytwin which only partially relieves the internal stresses. Relatively thicker films may completely reduce internal stresses if all three variants of the ferroelectric phase are brought together such that the film has the same in-plane size as the substrate. In this article, we provide experimental evidence on the formation of the three-domain structure based on transmission electron microscopy in 450 nm thick (001) PbZr0.2Ti0.8O3 films on (001) SrTiO3 grown by pulsed laser deposition. X-ray diffraction studies show that the film is fully relaxed. Experimental data is analyzed in terms of a domain stability map. It is shown that the observed structure in epitaxial ferroelectric films is due to the interplay between relaxation by misfit dislocations at the deposition temperature and relaxation by polydomain formation below the phase transformation temperature. © 2001 American Institute of Physics.
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77.80.Dj Domain structure; hysteresis
65.40.De Thermal expansion; thermomechanical effects
68.60.Bs Mechanical and acoustical properties
81.15.Fg Pulsed laser ablation deposition
64.70.K- Solid-solid transitions
77.80.B- Phase transitions and Curie point

Transient electron transport in indium-doped semiinsulating GaAs

V. Kažukauskas, J. Storasta, and J.-V. Vaitkus

J. Appl. Phys. 89, 557 (2001); http://dx.doi.org/10.1063/1.1330759 (4 pages)

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We investigated the effect of In-doping up to a concentration of 2×1020 cm−3 on transient transport phenomena in semiinsulating liquid-encapsulated-Czochralski grown GaAs. The changes in time after a strong laser excitation of the photoconductivity and nonequilibrium Hall mobility were analyzed. We did not find extra energy levels caused by indium. Nevertheless, In-doping caused significant changes in the behavior of the nonequilibrium mobility in the temperature range of 300–420 K, which were not observed in other crystals, undoped or doped by other dopants. They could not be explained merely by the reduction of dislocation density caused by In. Besides, the In-doping was demonstrated to cause the rearrangement of defect inhomogeneities. It is considered that lattice defects become distributed more homogeneously and appear more probably as short-range inhomogeneities instead of accumulations around dislocations. This diminishes the role of percolation phenomena and intensifies the effect of smaller defects on carrier transport. © 2001 American Institute of Physics.
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71.55.Eq III-V semiconductors
72.80.Ey III-V and II-VI semiconductors
72.40.+w Photoconduction and photovoltaic effects
72.20.Ee Mobility edges; hopping transport
72.20.My Galvanomagnetic and other magnetotransport effects

Domain switching and electromechanical properties of pulse poled Pb(Zn1/3Nb2/3)O3–PbTiO3 crystals

Hanxing Yu, Venkat Gopalan, Jürgen Sindel, and Clive A. Randall

J. Appl. Phys. 89, 561 (2001); http://dx.doi.org/10.1063/1.1289221 (7 pages) | Cited 16 times

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Domain switching behavior is studied under pulse field conditions in (1−x)Pb(Zn1/3Nb2/3)O3–xPbTiO3 single crystals oriented at various crystallographic directions. The activation energy, critical field, and domain wall mobilities are determined from simple methods earlier employed to ferroelectric single crystals by Merz [Phys. Rev. 95, 690 (1954)]. Domain structures were observed by atomic force microscopy of etched surfaces and shown to have a dendritic morphology under pulse conditions. The size and density of these dendritic domains are compared for various pulse conditions and discussed in terms of nucleation and domain growth behavior. The pulsed electric fields were also utilized to pole the crystals in the [001]C directions, and the corresponding piezoelectric strains were determined. © 2001 American Institute of Physics.
Show PACS
77.80.Dj Domain structure; hysteresis
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.22.Ej Polarization and depolarization
77.65.-j Piezoelectricity and electromechanical effects
68.35.B- Structure of clean surfaces (and surface reconstruction)

Dielectric and piezoelectric properties of sol–gel derived lead magnesium niobium titanate films with different textures

Jeong Hwan Park, Fei Xu, and Susan Trolier-McKinstry

J. Appl. Phys. 89, 568 (2001); http://dx.doi.org/10.1063/1.1324685 (7 pages) | Cited 33 times

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The piezoelectric and dielectric constants for Pb(Mg1/3Nb2/3)O3–PbTiO3 (PMN–PT, 70/30) films with different orientations were measured. PMN–PT films were deposited on Pt(111)-passivated silicon substrates using a modified sol–gel process. The room temperature dielectric constants K for the {100}-oriented films were 2500–2600, while K for {111}-oriented films were 1900–2000. In both cases tan δ was less than 0.03. The dependence of the piezoelectric coefficient d31 of the PMN–PT films on the poling fields was investigated. The d31 coefficients of {100}-oriented PMN–PT films were found to range from −28 to −69 pC/N with poling field. The {100}-oriented PMN–PT films showed larger piezoelectric coefficient than {111}-oriented films. The d33 coefficients of the 1.5 μm thick {100} oriented PMN–PT films were ∼170–183 pC/N. The aging rate of −d31 was ∼4%–10%/decade. © 2001 American Institute of Physics.
Show PACS
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.22.Ch Permittivity (dielectric function)
77.65.Bn Piezoelectric and electrostrictive constants
77.55.-g Dielectric thin films
77.22.Ej Polarization and depolarization

Forced vibrations of the fundamental family of modes in AT-cut quartz strip resonators

H. F. Tiersten and T.-L. Sham

J. Appl. Phys. 89, 575 (2001); http://dx.doi.org/10.1063/1.1323749 (11 pages) | Cited 1 time

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Mindlin’s equations for the vibrations of elastic crystal plates are employed in the description of AT-cut quartz strip resonators. The electrically driven three-dimensional piezoelectric pure thickness solution is incorporated in the treatment. The driving voltage appearing in this thickness solution is included in the variational principle from which the plate equations are obtained. In this way the resulting Mindlin equations contain the driving voltage and hold for plates with small piezoelectric coupling. The equations are applied in the analysis of strip resonators. The eigensolutions are obtained by solving a sequence of one-dimensional problems that are defined by utilizing the results from the previous problem variationally. The driven solution is obtained by means of an expansion in the eigensolutions and a lumped parameter representation of the admittance, which is valid in the vicinity of a resonance, is obtained. Calculated results are presented for a range of geometries and the influence of the couplings is exhibited. © 2001 American Institute of Physics.
Show PACS
77.65.Fs Electromechanical resonance; quartz resonators
85.50.-n Dielectric, ferroelectric, and piezoelectric devices
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