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15 Jun 2001

Volume 89, Issue 12, pp. 7711-8358

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All-perovskite-oxide ferroelectric memory transistor composed of Bi2Sr2CuOx and PbZr0.5Ti0.5O3 films

H. Ota, H. Fujino, S. Migita, S.-B. Xiong, and S. Sakai

J. Appl. Phys. 89, 8153 (2001); http://dx.doi.org/10.1063/1.1370999 (6 pages) | Cited 7 times

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An all-perovskite-oxide transistor composed of a tetragonal perovskite PbZr0.5Ti0.5O3 (ferroelectric) and a layered perovskite Bi2Sr2CuO6 (conducting channel) is fabricated on a cubic perovskite Nb-doped SrTiO3 (gate electrode). We demonstrate a considerably large conductance modulation of Bi2Sr2CuO6 by varying the direction and magnitude of the polarization. The ratio of the ON- and OFF-state drain currents reaches 196. A memory retention time as long as about 8 h is also observed. The drain current versus the drain voltage curves analyzed by adopting a semiconductor model give fairly good agreement with the measurement data. We also discuss the advantages and future prospects of all-perovskite-oxide transistors. © 2001 American Institute of Physics.
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85.50.Gk Non-volatile ferroelectric memories
77.55.-g Dielectric thin films
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
85.30.Tv Field effect devices
77.22.Ej Polarization and depolarization

Single-electron tunneling in highly doped silicon nanowires in a dual-gate configuration

A. Tilke, R. H. Blick, H. Lorenz, and J. P. Kotthaus

J. Appl. Phys. 89, 8159 (2001); http://dx.doi.org/10.1063/1.1368399 (4 pages) | Cited 16 times

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Lateral patterning of highly doped silicon-on-insulator films allows us to observe conductance oscillations due to single-electron charging effects. In our devices, silicon nanostructures are embedded into a metal–oxide–silicon configuration. The single-electron effects can be tuned both by an in-plane sidegate, as well as by a metallic topgate, a technology which is compatible with large-scale integration of single-electron devices with dimensions down to 10 nm. We compare the influence of different gating electrodes, important for ultralarge scale integration, on the electron islands. © 2001 American Institute of Physics.
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73.23.Hk Coulomb blockade; single-electron tunneling
81.05.Cy Elemental semiconductors
85.35.Gv Single electron devices
73.63.Nm Quantum wires
81.07.Vb Quantum wires
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
85.30.Tv Field effect devices

Impact of exposure induced refractive index changes of photoresists on the photolithographic process

Andreas Erdmann, Clifford L. Henderson, and C. Grant Willson

J. Appl. Phys. 89, 8163 (2001); http://dx.doi.org/10.1063/1.1359165 (6 pages) | Cited 3 times

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In many commercial and noncommercial photoresists the real and the imaginary parts of the refractive index are changed during exposure. Using a finite-difference beam-propagation algorithm, we analyze the impact of these nonlinear optical effects on the photolithographic process. Changes of the real part of the refractive index have a considerable impact on dose latitudes, sidewalls, swing curves, iso-dense bias and other process parameters. These effects become more dominant as the thickness of the resist layer increases. © 2001 American Institute of Physics.
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85.40.Hp Lithography, masks and pattern transfer
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
42.50.Md Optical transient phenomena: quantum beats, photon echo, free-induction decay, dephasings and revivals, optical nutation, and self-induced transparency

Effect of Néel coupling on magnetic tunnel junctions

S. Tegen, I. Mönch, J. Schumann, H. Vinzelberg, and C. M. Schneider

J. Appl. Phys. 89, 8169 (2001); http://dx.doi.org/10.1063/1.1365445 (6 pages) | Cited 15 times

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We have studied the effect of the dipolar magnetic coupling (also known as Néel coupling or “orange-peel” coupling) in tunneling magnetoresistive (TMR) elements. With an in situ scanning tunneling microscope we directly accessed the roughness of the films and found a close correspondence between the values for the coupling fields determined by the magneto-optical Kerr effect and the ones computed on the basis of the measured morphology parameters. We confirm an increase of the dipole coupling between the magnetic layers with decreasing barrier thickness as predicted by the model. Deviations from the theoretical predictions are observed for the case of thinner soft magnetic layers, which can be explained by reduced magnetization in very thin films. We demonstrate the importance of dipolar coupling for understanding the magnetic behavior of TMR elements by comparing TMR curves for optimized and nonoptimized structures. © 2001 American Institute of Physics.
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73.40.Gk Tunneling
75.70.Cn Magnetic properties of interfaces (multilayers, superlattices, heterostructures)
75.45.+j Macroscopic quantum phenomena in magnetic systems
73.50.Jt Galvanomagnetic and other magnetotransport effects (including thermomagnetic effects)
68.65.Ac Multilayers
72.15.Gd Galvanomagnetic and other magnetotransport effects
72.20.My Galvanomagnetic and other magnetotransport effects

Temperature- and field-dependent quantum efficiency in tris-(8-hydroxy) quinoline aluminum light-emitting diodes

S. K. Saha, Y. K. Su, and F. S. Juang

J. Appl. Phys. 89, 8175 (2001); http://dx.doi.org/10.1063/1.1364651 (4 pages) | Cited 2 times

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Temperature- and field-dependent electroluminescence and quantum efficiency have been investigated in tris-(8-hydroxy) quinoline aluminum (Alq3) light-emitting diodes over the temperature range from 10 to 300 K. At lower applied voltage, two peaks have been observed in the quantum efficiency with temperature. The two peaks are attributed to the deep trap levels (high-temperature regime) and shallow trap levels (low-temperature regime) in Alq3. With increasing voltage, the high-temperature peak shifts toward lower temperature but no significant shift of the low-temperature peak is observed. At voltage around 10 V, superposition of two peaks causes the apparent saturation in the low-temperature regime of the quantum efficiency. © 2001 American Institute of Physics.
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85.60.Jb Light-emitting devices
78.60.Fi Electroluminescence
78.66.Qn Polymers; organic compounds

Meyer–Neldel rule for dark current in charge-coupled devices

Ralf Widenhorn, Lars Mündermann, Armin Rest, and Erik Bodegom

J. Appl. Phys. 89, 8179 (2001); http://dx.doi.org/10.1063/1.1372365 (4 pages) | Cited 11 times

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We present the results of a systematic study of the dark current in each pixel of a charged-coupled device chip. It was found that the Arrhenius plot, at temperatures between 222 and 291 K, deviated from a linear behavior in the form of continuous bending. However, as a first approximation, the dark current, D, can be expressed as: D=D0 exp(−ΔE/kT), where ΔE is the activation energy, k is Boltzmann’s constant, and T the absolute temperature. It was found that ΔE and the exponential prefactor D0 follow the Meyer–Neldel rule (MNR) for all of the more than 222,000 investigated pixels. The isokinetic temperature, T0, for the process was found as 294 K. However, measurements at 313 K did not show the predicted inversion in the dark current. It was found that the dark current for different pixels merged at temperatures higher than T0. A model is presented which explains the nonlinearity and the merging of the dark current for different pixels with increasing temperature. Possible implications of this finding regarding the MNR are discussed. © 2001 American Institute of Physics.
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42.79.Pw Imaging detectors and sensors
85.30.Tv Field effect devices
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