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1 Nov 2000

Volume 88, Issue 9, pp. 4933-5501

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Vacuum-ultraviolet resonant photoabsorption imaging of laser produced plasmas

J. S. Hirsch, O. Meighan, J-P. Mosnier, P. van Kampen, W. W. Whitty, J. T. Costello, C. L. S. Lewis, A. G. MacPhee, G. J. Hirst, J. Westhall, and W. Shaikh

J. Appl. Phys. 88, 4953 (2000); http://dx.doi.org/10.1063/1.1314306 (8 pages) | Cited 3 times

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We present results from a vacuum-ultraviolet (VUV) “photoabsorption imaging” technique based on the measurement of the time and space resolved absorption of a quasimonochromatic VUV beam from a laser plasma light source. The use of VUV radiation as a probe beam permits direct access to resonance lines of (singly and more highly charged) ions and also to the resonant and nonresonant continua of atoms and ions. In this experiment we have confined ourselves to measurements using the 3p–3d resonances of Ca, Ca+, and Ca2+ as markers of the temporal and spatial distribution of ground state atoms and ions in an expanding laser plasma plume. We show how time resolved column density maps may be extracted from such images. In addition we have extracted plasma plume velocities from the data, which compare well with an analytical laser ablation model. © 2000 American Institute of Physics.
Show PACS
52.70.Kz Optical (ultraviolet, visible, infrared) measurements
52.50.Jm Plasma production and heating by laser beams (laser-foil, laser-cluster, etc.)
52.25.Os Emission, absorption, and scattering of electromagnetic radiation
32.30.Jc Visible and ultraviolet spectra
07.57.-c Infrared, submillimeter wave, microwave and radiowave instruments and equipment
07.60.-j Optical instruments and equipment

Modeling of incident particle energy distribution in plasma immersion ion implantation

X. B. Tian, D. T. K. Kwok, and Paul. K. Chu

J. Appl. Phys. 88, 4961 (2000); http://dx.doi.org/10.1063/1.1319163 (6 pages) | Cited 12 times

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Plasma immersion ion implantation is an effective surface modification technique. Unlike conventional beam-line ion implantation, it features ion acceleration/implantation through a plasma sheath in a pulsed mode and non-line-of-sight operation. Consequently, the shape of the sample voltage pulse, especially the finite rise time due to capacitance effects of the hardware, has a large influence on the energy spectra of the incident ions. In this article, we present a simple and effective analytical model to predict and calculate the energy distribution of the incident ions. The validity of the model is corroborated experimentally. Our results indicate that the ion energy distribution is determined by the ratio of the total pulse duration to the sample voltage rise time but independent of the plasma composition, ion species, and implantation voltage, subsequently leading to the simple analytical expressions. The ion energy spectrum has basically two superimposed components, a high-energy one for the majority of the ions implanted during the plateau region of the voltage pulse as well as a low-energy one encompassing ions implanted during the finite rise time of the voltage pulses. The lowest-energy component is attributed to a small initial expanding sheath obeying the Child-Langmuir law. Our model can also deal with broadening of the energy spectra due to molecular ions such as N2+ or O2+, in which case each implanted atom only carries a fraction (in this case, half) of the total acceleration energy. © 2000 American Institute of Physics.
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61.72.up Other materials
61.82.Fk Semiconductors
52.77.Bn Etching and cleaning
52.77.Dq Plasma-based ion implantation and deposition
52.40.Hf Plasma-material interactions; boundary layer effects

Spatiotemporal behaviors of excited Xe atoms in unit discharge cell of ac-type plasma display panel studied by laser spectroscopic microscopy

Kunihide Tachibana, Shaojun Feng, and Tetsuo Sakai

J. Appl. Phys. 88, 4967 (2000); http://dx.doi.org/10.1063/1.1314312 (8 pages) | Cited 49 times

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Two-dimensional spatiotemporal behaviors of excited Xe atoms in the 1s4 resonance state and the 1s5 metastable state were measured in a unit discharge cell of an ac-type plasma display panel by a laser absorption technique combined with an optical microscope. The measured density of Xe(1s5) has two large peaks on both the temporal anode and cathode sides. The peak at the anode has a narrower spatial distribution while the peak at the cathode is distributed over the electrode area. In its temporal behavior, the anode peak rises slightly faster than the peak at the cathode and decays faster at the beginning of afterglow, but both peaks tend to have the same decay rate in the later period. The behavior of Xe(1s4) shows similar features, but the decay rate is much larger, corresponding to the effective lifetime of imprisoned resonance radiation. The maximum densities of Xe(1s5) and Xe(1s4) are 5×1013 and 2×1013 cm−3, respectively. Emission from Xe(2p) atoms was also observed, and this nearly followed the current wave form. With these results, we estimated the efficiency of vacuum ultraviolet emissions from excited Xe(1s4) atoms and Xe2∗ excimers formed from Xe(1s5) atoms. © 2000 American Institute of Physics.
Show PACS
52.70.Kz Optical (ultraviolet, visible, infrared) measurements
31.50.Df Potential energy surfaces for excited electronic states
52.80.-s Electric discharges
52.25.Os Emission, absorption, and scattering of electromagnetic radiation
52.75.-d Plasma devices
85.60.Pg Display systems
32.30.Jc Visible and ultraviolet spectra
85.60.Jb Light-emitting devices
07.60.Pb Conventional optical microscopes
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