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15 Sep 2000

Volume 88, Issue 6, pp. 3113-3785

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Atomic force microscope based patterning of carbonaceous masks for selective area growth on semiconductor surfaces

Adrian Avramescu, Akio Ueta, Katsuhiro Uesugi, and Ikuo Suemune

J. Appl. Phys. 88, 3158 (2000); http://dx.doi.org/10.1063/1.1287763 (8 pages) | Cited 5 times

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Carbonaceous masks for selective growth on GaAs substrates were fabricated with high resolution by anodization with an atomic force microscope (AFM). Mask deposition is made by a 15-kV accelerated electron-beam irradiation in a scanning electron microscope. The local anodization of the carbonaceous film under intense electric field is investigated and the main factors for improving resolution and reproducibility are discussed. The “edge effect” of the anodized region, revealed in the electric-field distribution at the tip–water–film interfaces is identified as the main factor responsible for the resolution degradation during patterning. Short forward bias pulse for anodizing the carbonaceous film and the subsequent reverse bias pulse for neutralizing the space charge, locally accumulated during the forward bias, are shown to be effective for the higher pattern resolution and also for deepening the patterning depth. Based on the analysis, a modulated-amplitude pulsed bias mode is proposed and is demonstrated to bring a significant improvement in the resolution and the aspect ratio of patterns made by the anodization. Carbonaceous masks ready for selective area growth of semiconductors alloys were fabricated with the pattern resolution of ∼26 nm, limited by the curvature of AFM cantilever tips. © 2000 American Institute of Physics.
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85.40.Hp Lithography, masks and pattern transfer
81.65.Cf Surface cleaning, etching, patterning
82.45.-h Electrochemistry and electrophoresis
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
85.40.Sz Deposition technology
81.07.-b Nanoscale materials and structures: fabrication and characterization
81.16.-c Methods of micro- and nanofabrication and processing
85.35.-p Nanoelectronic devices

Population inversion in an optically pumped single quantum well

T. J. Green and W. Xu

J. Appl. Phys. 88, 3166 (2000); http://dx.doi.org/10.1063/1.1287604 (4 pages) | Cited 5 times

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An optically pumped intersubband laser generator is proposed in which the continuum states above an Al0.2Ga0.8As–GaAs–Al0.2Ga0.8As single quantum well with a width of L=17 nm serve as the highest level in a four-level laser system. The design allows much greater flexibility in the choice of pumping source and simplifies considerably the device fabrication. We have obtained the electronic subband structure of the proposed device and utilized a simple rate equation approach to examine the electron density in different states under optical pumping. © 2000 American Institute of Physics.
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42.55.Px Semiconductor lasers; laser diodes
42.60.By Design of specific laser systems
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