jap banner
  • Volume/Page
  • Keyword
  • DOI
  • Citation
  • Advanced
   
 
 
 

Flickr Twitter iResearch App Facebook

BROWSE VOLUMES

Year Range: 
Search Issue | RSS Feeds RSS
Previous Issue Next Issue

1 Aug 2000

Volume 88, Issue 3, pp. 1201-1704

Return to All Sections
back to top
RSS Feeds

Polishing-related optical anisotropy of semi-insulating GaAs studied by reflectance difference spectroscopy

Y. H. Chen, Z. G. Wang, J. J. Qian, and Z. Yang

J. Appl. Phys. 88, 1695 (2000); http://dx.doi.org/10.1063/1.373874 (3 pages) | Cited 6 times

Full Text: Read Online (HTML) | Download PDF

Show Abstract
The strong in-plane optical anisotropy of (001) semi-insulating GaAs, which comes from the submicron region under the surface, has been observed by reflectance difference spectroscopy. The optical anisotropy can be explained by the anisotropic strain that is introduced by the asymmetric distribution of 60° dislocations during surface polishing. The simulated spectra reproduce the line shape of the experimental ones. The simulations show that the anisotropic strain is typically about 2.3×10−4. © 2000 American Institute of Physics.
Show PACS
78.20.-e Optical properties of bulk materials and thin films
68.35.B- Structure of clean surfaces (and surface reconstruction)
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)

Electron paramagnetic resonance studies on microcrystalline silicon prepared by sputtering method

Takashi Ehara, Tadaaki Ikoma, Kimio Akiyama, and Shozo Tero-Kubota

J. Appl. Phys. 88, 1698 (2000); http://dx.doi.org/10.1063/1.373875 (3 pages) | Cited 11 times

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Dangling bond (DB) defects in unhydrogenated microcrystalline silicon (μc-Si) prepared by rf sputtering have been studied. Raman spectra and x-ray diffraction indicate that the μc-Si fraction has been formed at the Ar sputtering pressure higher than 26.6 Pa while only amorphous silicon (a-Si) has been produced at the lower pressure. The electron paramagnetic resonance (EPR) spectrum in the μc-Si film is broad and unsymmetrical with the average g value of g=2.006 compared with that of a-Si (g=2.0055). The X- and Q-band EPR measurements suggest that the line shape is mainly governed by the inhomogeneous broadening due to the g anisotropy, indicating relatively large distribution of the structure of the DB defects. © 2000 American Institute of Physics.
Show PACS
76.30.Mi Color centers and other defects
71.55.Cn Elemental semiconductors
78.30.Am Elemental semiconductors and insulators
78.66.Db Elemental semiconductors and insulators
71.18.+y Fermi surface: calculations and measurements; effective mass, g factor

Electro-optic properties of oxide ferroelectrics grown on GaN/sapphire

F. Wang, V. Fuflyigin, and A. Osinsky

J. Appl. Phys. 88, 1701 (2000); http://dx.doi.org/10.1063/1.373880 (3 pages) | Cited 12 times

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Recent advances in the processing of complex oxide materials have allowed us to monolithically grow ferroelectrics, of the lead lanthanum zirconate titanate system, on a GaN/sapphire structure. The thickness of these ferroelectric films ranged from 0.5 to 5 μm. Strong electrooptic effect with field-induced birefringence, as large as 0.02, was measured for (Pb,La)(Zr,Ti)O3 layer grown on a GaN/sapphire structure. The applicability of the lead lanthanum zirconate titanate material as a light modulating medium, integrated with GaN-based devices, was further proven by demonstrating optical modulation of a laser beam in an Al/(Pb,La)(Zr,Ti)O3/GaN/sapphire structure. © 2000 American Institute of Physics.
Show PACS
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.55.-g Dielectric thin films
77.80.-e Ferroelectricity and antiferroelectricity
78.20.Jq Electro-optical effects
78.20.Fm Birefringence
42.79.Hp Optical processors, correlators, and modulators
78.66.Li Other semiconductors
Return to All Sections
Close

Google Calendar

ADVERTISEMENT

Go to AIP Home   © AIP Publishing LLC
close