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1 Dec 2000

Volume 88, Issue 11, pp. 6109-6957

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Localized surface plasmons on nanometric gold particles observed with an apertureless scanning near-field optical microscope

P.-M. Adam, S. Benrezzak, J. L. Bijeon, and P. Royer

J. Appl. Phys. 88, 6919 (2000); http://dx.doi.org/10.1063/1.1323528 (3 pages) | Cited 8 times

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Using an apertureless scanning near-field optical microscope, we obtained wavelength dependent images of an isolated gold nanometric particle laid on a quartz substrate. The images show a sharp resonance around λ=488 nm. The far-field surface plasmon resonance of the spherical particles (diameter is 40 nm) in solution is centered at λ=530 nm. Atomic force microscope images give evidence that the particles spread on the substrate. The near-field blueshift of the resonance is thus explained by excitation of a surface plasmon resonance along the minor axis of an oblate spheroid shaped particle. © 2000 American Institute of Physics.
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73.20.Mf Collective excitations (including excitons, polarons, plasmons and other charge-density excitations)
61.46.-w Structure of nanoscale materials
68.37.Ef Scanning tunneling microscopy (including chemistry induced with STM)
68.37.Ps Atomic force microscopy (AFM)
68.37.Rt Magnetic force microscopy (MFM)
68.37.Uv Near-field scanning microscopy and spectroscopy

Strain relaxation and defect reduction in InxGa1−xAs/GaAs by lateral oxidation of an underlying AlGaAs layer

K. L. Chang, J. H. Epple, G. W. Pickrell, H. C. Lin, K. Y. Cheng, and K. C. Hsieh

J. Appl. Phys. 88, 6922 (2000); http://dx.doi.org/10.1063/1.1287766 (3 pages) | Cited 4 times

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The strain relaxation in In0.25Ga0.75As and In0.4Ga0.6As grown on GaAs substrates at low temperature has been studied before and after laterally oxidizing an underlying Al0.98Ga0.02As layer. The relaxation as a function of layer thickness has been measured by cross-sectional transmission electron microscopy and x-ray analysis. It is found that oxidation of the Al0.98Ga0.02As layer improves the relaxation of the strained InxGa1−xAs layer. Moreover, the interfacial misfit dislocations have been removed, and the threading dislocation density has decreased approximately by one order of magnitude after oxidation. © 2000 American Institute of Physics.
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68.35.Gy Mechanical properties; surface strains
81.65.Mq Oxidation
68.35.Ct Interface structure and roughness
61.72.Ff Direct observation of dislocations and other defects (etch pits, decoration, electron microscopy, x-ray topography, etc.)
61.72.Lk Linear defects: dislocations, disclinations

Ion-nitriding induced plastic deformation in austenitic stainless steel

S. Grigull and S. Parascandola

J. Appl. Phys. 88, 6925 (2000); http://dx.doi.org/10.1063/1.1321019 (3 pages) | Cited 17 times

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Lattice parameter measurements in ion-nitrided surface layers of austenitic stainless steel have been performed using x-ray microbeam diffraction on samples with different nitrogen contents as a function of depth and grain orientation, respectively. The lattice expansion observed in the layers as a result of nitriding is anisotropic due to the presence of elastic strains, but the austenite (fcc) structure is largely retained. Parallel to the layer–substrate interface the expanded lattice is highly relaxed which is, along with significant changes in the surface morphology, indicative of plastic deformation in the nitrided zone. © 2000 American Institute of Physics.
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81.40.Lm Deformation, plasticity, and creep
81.65.Lp Surface hardening: nitridation, carburization, carbonitridation
62.20.F- Deformation and plasticity

Distribution of Nb and Co in an α-Fe/Nd2Fe14B-type nanocomposite

M. W. Chen, A. Sakai, X. M. Wang, A. Inoue, and T. Sakurai

J. Appl. Phys. 88, 6928 (2000); http://dx.doi.org/10.1063/1.1317235 (3 pages) | Cited 3 times

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Atom probe field ion microscopy was employed to investigate the distribution of the alloying elements in a nanocrystalline Fe76.5Nd8Co8B6Nb1.5 (at. %) alloy consisting of soft magnetic α-Fe and hard magnetic Nd2Fe14B. It was found that Co atoms prefer to partition into Nd2Fe14B phase. The partitioning factor of Co in the hard magnetic phase is approximately 2 with respect to the soft magnetic phase, α-Fe. Atom probe concentration and integrated depth profiles showed that the Nb atoms segregate at the interfaces between the soft and the hard magnetic phases. Based on the atom probe results, the beneficial effects of Nb and Co on the microstructure and the hard magnetic properties of the nanocomposite are discussed. © 2000 American Institute of Physics.
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75.50.Ww Permanent magnets
68.37.Vj Field emission and field-ion microscopy
61.46.-w Structure of nanoscale materials
75.50.Kj Amorphous and quasicrystalline magnetic materials
64.75.-g Phase equilibria
75.50.Bb Fe and its alloys

In situ conductivity study of the phase transition in Sb-doped C60

Xiang Li, Y. J. Tang, H. W. Zhao, W. S. Zhan, Haiqian Wang, and J. G. Hou

J. Appl. Phys. 88, 6931 (2000); http://dx.doi.org/10.1063/1.1314610 (3 pages) | Cited 3 times

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C60/Sb bilayers were prepared on the substrate of mica, and their electrical properties were investigated by in situ dc conductivity measurements. The results indicate that the Sb doping in C60 significantly affects the critical temperature (Tc) for the orientational order–disorder transition of C60. The Tc of Sb-doped C60 increases to about 278 K, ∼18 K higher than that of the pristine C60. This transition is sensitive to Sb content and disappears upon annealing. A possible mechanism of such a phase transition is discussed. © 2000 American Institute of Physics.
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72.80.Rj Fullerenes and related materials
61.48.-c Structure of fullerenes and related hollow and planar molecular structures
64.70.K- Solid-solid transitions
72.20.Fr Low-field transport and mobility; piezoresistance

Trans-projected-range gettering of copper in high-energy ion-implanted silicon

Y. M. Gueorguiev, R. Kögler, A. Peeva, A. Mücklich, D. Panknin, R. A. Yankov, and W. Skorupa

J. Appl. Phys. 88, 6934 (2000); http://dx.doi.org/10.1063/1.1311823 (3 pages) | Cited 1 time

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Strong gettering of Cu atoms beyond the projected ion range RP has been found in single-crystal Si implanted with P+ and As+ ions at MeV energies. We call this phenomenon the “trans-RP effect.” The formation of a separate Cu gettering band below RP, as detected by secondary ion mass spectrometry, indicates the presence of a significant amount of defects therein. These defects have not been detected by transmission electron microscopy and we suggest that they are small interstitial clusters. The amount of Cu atoms gettered beyond RP is, particularly for the P implants, much greater than that in the gettering layer at RP, indicating that the gettering ability of the point defects beyond RP is higher than that of the extended defects at RP. A mechanism responsible for their formation and clustering in the trans-RP region is proposed, and an explanation is given of the differences in the results for the P and As implants. © 2000 American Institute of Physics.
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61.72.Yx Interaction between different crystal defects; gettering effect
81.05.Cy Elemental semiconductors
61.72.uf Ge and Si
61.80.Jh Ion radiation effects
61.85.+p Channeling phenomena (blocking, energy loss, etc.)
82.80.Ms Mass spectrometry (including SIMS, multiphoton ionization and resonance ionization mass spectrometry, MALDI)
61.72.J- Point defects and defect clusters

Growth of heteroepitaxial ZnO thin films by femtosecond pulsed-laser deposition

E. Millon, O. Albert, J. C. Loulergue, J. Etchepare, D. Hulin, W. Seiler, and J. Perrière

J. Appl. Phys. 88, 6937 (2000); http://dx.doi.org/10.1063/1.1324679 (3 pages) | Cited 30 times

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ZnO thin films have been grown on various substrates by femtosecond pulsed-laser deposition. According to optical microscopy and atomic force microscopy analyses, the production of droplets is not significant using femtosecond pulses. Smooth, dense, stoichiometric, crystalline, and textured hexagonal ZnO films are epitaxially grown on (0001) sapphire at 700 °C with an in-plane epitaxial relationship corresponding to a 30° rotation of the ZnO basal plane with respect to the sapphire. Nevertheless, channeling experiments and rocking curve measurements show that the crystalline quality is not as good as that obtained with nanosecond pulses. © 2000 American Institute of Physics.
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81.15.Fg Pulsed laser ablation deposition
81.05.Dz II-VI semiconductors
61.66.Bi Elemental solids
61.66.Dk Alloys
68.55.-a Thin film structure and morphology
68.55.Nq Composition and phase identification

Study of the electrostatic force between a conducting tip in proximity with a metallic surface: Theory and experiment

Shivprasad Patil, Arun V. Kulkarni, and C. V. Dharmadhikari

J. Appl. Phys. 88, 6940 (2000); http://dx.doi.org/10.1063/1.1318362 (3 pages) | Cited 7 times

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A formula has been derived for the electrostatic force between the conducting tip and a planer metallic surface by exploiting the fact that the tip–sample geometry can be described by confocal hyperboloids of revolution. The prolate spheroidal coordinate system was found to be most convenient for this purpose. The general behavior of force curves obtained in the attractive regime using a conducting cantilever and an optical beam deflection system is in reasonably good agreement with the theory over a wide range of distances. The results are important in the context of design, development, and understanding of scanning probe microscopes involving voltage bias between the probe and sample. © 2000 American Institute of Physics.
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68.37.Ef Scanning tunneling microscopy (including chemistry induced with STM)
68.37.Ps Atomic force microscopy (AFM)
68.37.Rt Magnetic force microscopy (MFM)
68.37.Uv Near-field scanning microscopy and spectroscopy
41.20.Cv Electrostatics; Poisson and Laplace equations, boundary-value problems

Formation of a defect-free denuded zone in GaP substrate by thermal annealing

Hiroshi Okada, Sei-ichirou Ohmoto, and Takao Kawanaka

J. Appl. Phys. 88, 6943 (2000); http://dx.doi.org/10.1063/1.1323527 (2 pages)

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The vacancy-type Frank dislocation loops in GaP, which are the origin of shallow etch pit defects, dissolve during heat treatment via outdiffusion of the originating point defects. This forms a defect-free denuded zone under the surface of a GaP wafer. The activation enthalpy of the diffusion process of the gallium vacancy (which corresponds to the formation of the denuded zone) is estimated to be 4.0 eV. © 2000 American Institute of Physics.
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61.72.Cc Kinetics of defect formation and annealing
66.30.Lw Diffusion of other defects
61.72.Yx Interaction between different crystal defects; gettering effect
61.72.Ff Direct observation of dislocations and other defects (etch pits, decoration, electron microscopy, x-ray topography, etc.)
61.72.J- Point defects and defect clusters

Effective-mass enhancement and nonparabolicity in thin GaAs quantum wells

M. Städele and K. Hess

J. Appl. Phys. 88, 6945 (2000); http://dx.doi.org/10.1063/1.1321773 (3 pages) | Cited 7 times

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We study size quantization effects on the conduction band dispersion in GaAs/AlAs quantum wells using a semiempirical tight-binding method. For GaAs well thicknesses between 3 and 11 nm, we find a significant increase of the conduction band mass of up to 50% compared with bulk GaAs. Concomitantly, the confinement reduces the highest achievable group velocities for electrons in the Γ conduction valley of the well by up to 30%. We discuss some of the consequences for quantum-well-based devices. © 2000 American Institute of Physics.
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73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
71.18.+y Fermi surface: calculations and measurements; effective mass, g factor
71.15.Ap Basis sets (LCAO, plane-wave, APW, etc.) and related methodology (scattering methods, ASA, linearized methods, etc.)

Tunnel switch diode based on AlSb/GaSb heterojunctions

X.-C. Cheng, X. Cartoixà, M. A. Barton, C. J. Hill, and T. C. McGill

J. Appl. Phys. 88, 6948 (2000); http://dx.doi.org/10.1063/1.1317236 (3 pages) | Cited 1 time

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We report on tunnel switch diodes based on AlSb barriers and GaSb p–n junctions grown by molecular beam epitaxy. These were the devices with thyristor like switching in the GaSb/AlSb system. The characteristic “S” shaped current–voltage curve was found to occur for structures with AlSb barriers less than 300 Å thick. The switching voltage and current density exhibited less sensitivity to barrier and epilayer thickness than was predicted by the punch-through model. The results were correlated with drift diffusion simulations which have been modified to account for the presence of a tunneling contact. © 2000 American Institute of Physics.
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85.30.Mn Junction breakdown and tunneling devices (including resonance tunneling devices)
73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
85.30.Rs Thyristors
85.30.De Semiconductor-device characterization, design, and modeling

Disorder effects in reduced dimension: Indium–phosphide-based resonant tunneling diodes

B. D. Weaver, E. M. Jackson, G. P. Summers, and A. C. Seabaugh

J. Appl. Phys. 88, 6951 (2000); http://dx.doi.org/10.1063/1.1324680 (3 pages) | Cited 4 times

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Disorder alters the current–voltage characteristics of low-dimensional devices such as resonant tunneling diodes (RTDs) differently than conventional electronic devices, because of the increasing importance of quantum effects. There are now enough experimental data, including new measurements presented here, for the basis of a detailed model of radiation effects in RTDs to be developed. A model is presented in which the reduced dimensionality in the density of states of RTDs renders scattering of charge carriers from atomic defects highly effective in removing the carriers from resonance. © 2000 American Institute of Physics.
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85.30.Mn Junction breakdown and tunneling devices (including resonance tunneling devices)
85.30.Kk Junction diodes
85.30.De Semiconductor-device characterization, design, and modeling
61.82.Fk Semiconductors

Measurement of silicon surface recombination velocity using ultrafast pump–probe reflectivity in the near infrared

A. J. Sabbah and D. M. Riffe

J. Appl. Phys. 88, 6954 (2000); http://dx.doi.org/10.1063/1.1316047 (3 pages) | Cited 36 times

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We demonstrate that ultrafast pump–probe reflectivity measurements from bulk Si samples using a Ti:sapphire femtosecond oscillator (λ=800 nm) can be used to measure the Si surface recombination velocity. The technique is sensitive to recombination velocities greater than ∼104 cm s−1. © 2000 American Institute of Physics.
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72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
72.80.Cw Elemental semiconductors
81.05.Cy Elemental semiconductors
73.25.+i Surface conductivity and carrier phenomena
78.47.-p Spectroscopy of solid state dynamics
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
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