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15 Jan 2000

Volume 87, Issue 2, pp. 627-960

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Formation of a two-dimensional electron gas in an inverted undoped heterostructure with a shallow channel depth

A. Kawaharazuka, T. Saku, Y. Hirayama, and Y. Horikoshi

J. Appl. Phys. 87, 952 (2000); http://dx.doi.org/10.1063/1.371965 (3 pages) | Cited 8 times

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We investigated the dependence of transport characteristics of a two-dimensional electron gas (2DEG) on channel depth in an inverted undoped GaAs/AlGaAs heterostructure. We succeeded in forming a high-mobility 2DEG in a sample with 70 nm channel depth. We controlled the carrier density by varying the back-gate bias over a wide range. The highest mobility reached 2.3×106 cm2/Vs at 3.4×1011 cm−2. The relation between mobility and carrier density is determined: the mobility decreases in a low-carrier-density region as the channel depth decreases. This result suggests that the scattering due to the remote surface charges plays a more significant role. © 2000 American Institute of Physics.
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73.61.Ey III-V semiconductors
73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
73.50.Gr Charge carriers: generation, recombination, lifetime, trapping, mean free paths
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems

Ion channeling studies on mixed phases formed in metalorganic chemical vapor deposition grown Mg-doped GaN on Al2O3(0001)

B. Sundaravel, E. Z. Luo, J. B. Xu, I. H. Wilson, W. K. Fong, L. S. Wang, and C. Surya

J. Appl. Phys. 87, 955 (2000); http://dx.doi.org/10.1063/1.371966 (3 pages) | Cited 1 time

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Rutherford backscattering spectrometry and ion channeling were used to determine the relative quantities of wurtzite and zinc-blende phases in metalorganic chemical vapor deposition grown Mg-doped GaN(0001) on an Al2O3(0001) substrate with a GaN buffer layer. Offnormal axial channeling scans were used. High-resolution x-ray diffraction measurements also confirmed the presence of mixed phases. The in-plane orientation was found to be GaN[1math0]‖GaN[11math0]‖Al2O3[11math0]. The effects of rapid thermal annealing on the relative phase content, thickness and crystalline quality of the GaN epilayer were also studied. © 2000 American Institute of Physics.
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81.05.Ea III-V semiconductors
68.55.Nq Composition and phase identification
82.80.Yc Rutherford backscattering (RBS), and other methods of chemical analysis
79.20.Rf Atomic, molecular, and ion beam impact and interactions with surfaces
61.85.+p Channeling phenomena (blocking, energy loss, etc.)
61.72.Nn Stacking faults and other planar or extended defects
61.72.Ff Direct observation of dislocations and other defects (etch pits, decoration, electron microscopy, x-ray topography, etc.)
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Comment on “Assignment of the Raman active vibration modes of β-Si3N4 using micro-Raman scattering” [J. Appl. Phys. 85, 7380 (1999)]

Jianjun Dong and Otto F. Sankey

J. Appl. Phys. 87, 958 (2000); http://dx.doi.org/10.1063/1.371969 (2 pages) | Cited 13 times

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In this comment to a recent experimental paper by Honda et al. [J. Appl. Phys. 85, 7380 (1999)], we report first-principles calculations of phonon modes of β-Si3N4, which theoretically confirm the experimental micro-Raman assignments. In addition, the theory is able to locate the “missing” Ag mode, and we show that this mode is a bond-stretching mode. Hence, it is not in the low-frequency band as previously believed, but rather at intermediate frequency. We discuss the possible reasons this mode is “missing” in the spectra, and show that the application of high pressure will separate this mode from others. © 2000 American Institute of Physics.
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63.20.-e Phonons in crystal lattices
78.20.hb Piezo-optical, elasto-optical, acousto-optical, and photoelastic effects
78.30.Hv Other nonmetallic inorganics
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