jap banner
  • Volume/Page
  • Keyword
  • DOI
  • Citation
  • Advanced
   
 
 
 

Flickr Twitter iResearch App Facebook

BROWSE VOLUMES

Year Range: 
Search Issue | RSS Feeds RSS
Next Issue

1 Jan 2000

Volume 87, Issue 1, pp. 1-623

Return to All Sections
back to top
RSS Feeds

Near-field probing control of optical propagation in bidimensional guiding mesostructures

David Mulin, Michel Spajer, Daniel Courjon, Franck Carcenac, and Yong Chen

J. Appl. Phys. 87, 534 (2000); http://dx.doi.org/10.1063/1.371895 (4 pages) | Cited 12 times

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Scanning near-field optical microscopy is used for analyzing both the interaction of light with mesostructures and the capability of wave transfer between two macrowaveguides coupled by a matrix of periodic mesostructures. A spectral analysis shows the influence of the wavelength in such a configuration. © 2000 American Institute of Physics.
Show PACS
07.79.Fc Near-field scanning optical microscopes
42.79.Gn Optical waveguides and couplers
42.82.Et Waveguides, couplers, and arrays

Capacitive ultrasound transducer, based on the electrical double layer in electrolytes

N. Tankovsky

J. Appl. Phys. 87, 538 (2000); http://dx.doi.org/10.1063/1.371896 (5 pages) | Cited 4 times

Full Text: Read Online (HTML) | Download PDF

Show Abstract
An electroacoustic effect in electrolytes is analyzed on the basis of a distributed ionic capacitor, modulated in a wide range by transient electric field. The model explains well the experimental ionic concentration dependence and time dependence of the electroacoustic signal. © 2000 American Institute of Physics.
Show PACS
43.38.Ar Transducing principles, materials, and structures: general
82.45.-h Electrochemistry and electrophoresis
84.32.Tt Capacitors
85.50.-n Dielectric, ferroelectric, and piezoelectric devices

K2Te photocathode growth: A photoemission study

Diego Bisero, Alessandro di Bona, Paola Paradisi, and Sergio Valeri

J. Appl. Phys. 87, 543 (2000); http://dx.doi.org/10.1063/1.371897 (6 pages) | Cited 2 times

Full Text: Read Online (HTML) | Download PDF

Show Abstract
X-ray photoemission spectroscopy (XPS) has been used to investigate the growth process of K–Te thin layers with high quantum efficiency (QE) for photoemission in the UV range, prepared by sequential deposition of Te and K on a Mo substrate under ultrahigh vacuum conditions. Film formation occurs through different steps, characterized by increasing QE up to a saturation value which correspond to K2Te stoichiometry. By quantitative, angle resolved XPS measurements, surface segregation of one monolayer of K has been detected. Films prepared starting from different amounts of Te exhibit the same K2Te stoichiometry. However, the QE values are significantly different. Charge transfer from K to Te has been detected during K deposition and monitored by the shift of the Te 3d5/2 photoemission line. At the end of the K evaporation a shift of both Te 3d and K 2p photoemission lines has been observed, due to a band bending mechanism. The degradation by oxygen exposure of the quantum efficiency at 254 nm of K2Te has also been studied and compared with that of Cs2Te, which is currently used as photocathode material in UV-laser driven photoinjectors. It has been shown that K2Te is more rugged than Cs2Te. QE degradation is associated to the formation of TeO2 on the K2Te surface. © 2000 American Institute of Physics.
Show PACS
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
85.60.Ha Photomultipliers; phototubes and photocathodes
79.60.Bm Clean metal, semiconductor, and insulator surfaces
68.35.Dv Composition, segregation; defects and impurities
64.75.-g Phase equilibria
68.35.Fx Diffusion; interface formation

Characterization of ejected particles during laser cleaning

Y. F. Lu, Y. W. Zheng, and W. D. Song

J. Appl. Phys. 87, 549 (2000); http://dx.doi.org/10.1063/1.371898 (4 pages) | Cited 5 times

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Laser cleaning is a prospective cleaning method that can be widely used in microelectronics fabrication, archive restoration, and optical apparatus cleaning. Removal of particles from a solid substrate is an important aspect of laser cleaning. Although many studies have been carried out on this subject, few of them are objected to the characterization of the ejected particles in laser cleaning. In this article, a method was developed to “capture” the particles ejected from the substrate after laser irradiation. Detection of both angular distribution and ejection energies was achieved with this method. It was found that the angular distribution of the ejected particles fitted to a Gaussian curve when the laser irradiated normally to the substrate. The distribution curve for the particles ejected from a rough surface has a wider full width at half maximum than that from a smooth substrate. It was also found that the particle ejection energy increased obviously with laser fluence, therefore the laser cleaning efficiency was promoted sharply as laser fluence increased. © 2000 American Institute of Physics.
Show PACS
81.65.Cf Surface cleaning, etching, patterning
42.62.-b Laser applications
81.05.Cy Elemental semiconductors

Atomistic simulation of the vapor deposition of Ni/Cu/Ni multilayers: Incident adatom angle effects

X. W. Zhou and H. N. G. Wadley

J. Appl. Phys. 87, 553 (2000); http://dx.doi.org/10.1063/1.371899 (11 pages) | Cited 17 times

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Molecular dynamics simulations have been used to explore the effects of incident adatom angle upon the atomic scale structure of Ni/Cu/Ni multilayers grown by vapor deposition under controlled incident atom energy conditions. For incident atom energies of 1 eV or less, increasing the incident angle increased interfacial roughness, resulted in void formation in the nickel layer, and intermixing at the interfaces between metal layers. The interfacial roughness that formed during low impact energy oblique angle deposition was significantly reduced by substrate rotation during growth. However, rotation had no beneficial effects upon interfacial mixing. The use of a higher incident atom energy (⩾5 eV/atom) resulted in flatter interfaces and eliminated voids under oblique incidence conditions, but it also caused more severe interfacial mixing by an atomic exchange mechanism. When low (thermal) impact energies were used to deposit the first few monolayers of each new metal layer, intermixing by the exchange mechanism during subsequent hyperthermal energy deposition could be significantly reduced. Using this modulated incident energy growth strategy, films with little interfacial roughness and intermixing could be grown over a wide range of incident angles with or without substrate rotation. © 2000 American Institute of Physics.
Show PACS
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
75.70.Cn Magnetic properties of interfaces (multilayers, superlattices, heterostructures)
68.03.Fg Evaporation and condensation of liquids
68.43.Mn Adsorption kinetics
61.72.Qq Microscopic defects (voids, inclusions, etc.)
68.35.Fx Diffusion; interface formation
81.15.Aa Theory and models of film growth

Effect of mixing enthalpy on relaxed and strained growth of III–VyIV1−yII compound alloys using molecular-beam epitaxy

J. Genoe, Š. Németh, B. Grietens, M. Behet, R. Vounckx, and G. Borghs

J. Appl. Phys. 87, 564 (2000); http://dx.doi.org/10.1063/1.371900 (8 pages)

Full Text: Read Online (HTML) | Download PDF

Show Abstract
The strict virtual crystal model has been shown to describe accurately the mixing enthalpy of III–V ternary alloys. We allocate the different components of this model to both subreactions, i.e., the reactions forming III–VI and III–VII, present in the molecular-beam epitaxial growth of III–VIVII compound alloys, and derive thereof a model that describes accurately the composition obtained. A good correspondence with experimental growth data is obtained. We apply this model to both relaxed and strained layer growth and the evolution in the composition is given when a relaxed layer is grown on a substrate with a different lattice constant. © 2000 American Institute of Physics.
Show PACS
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
81.05.Hd Other semiconductors
65.20.-w Thermal properties of liquids
65.40.gd Entropy
68.55.Nq Composition and phase identification

Surface oxidation activates indium tin oxide for hole injection

D. J. Milliron, I. G. Hill, C. Shen, A. Kahn, and J. Schwartz

J. Appl. Phys. 87, 572 (2000); http://dx.doi.org/10.1063/1.371901 (5 pages) | Cited 129 times

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Oxygen plasma treatment of indium tin oxide (ITO) results in a change in work function and electron affinity by ∼0.5 eV. This change correlates with the measured increase in injected current in simple “hole-only” organic devices with O-plasma treated ITO electrodes. Neither addition nor removal of surface hydroxyl functionality accounts for the observed work function and electron affinity changes. X-ray and ultraviolet photoelectron spectroscopies show a new type of oxygen species is formed. Oxidation of surface Sn-OH to surface Sn-O• units is proposed to account for the observed changes in O-plasma treated ITO; this proposal can explain a wide variety of previously described ITO surface activation results. © 2000 American Institute of Physics.
Show PACS
72.80.Jc Other crystalline inorganic semiconductors
68.35.Dv Composition, segregation; defects and impurities
79.60.Bm Clean metal, semiconductor, and insulator surfaces
81.65.Mq Oxidation
73.20.At Surface states, band structure, electron density of states

Buffer free direct growth of GaN on 6H–SiC by metalorganic vapor phase epitaxy

H. Lahrèche, M. Leroux, M. Laügt, M. Vaille, B. Beaumont, and P. Gibart

J. Appl. Phys. 87, 577 (2000); http://dx.doi.org/10.1063/1.371902 (7 pages) | Cited 32 times

Full Text: Read Online (HTML) | Download PDF

Show Abstract
The growth of GaN on 6H–SiC is three dimensional (3D) and results in the formation of large islands presenting hexagonal truncated shape with {1–101} lateral facets and a top {0001} facet. In this work, we present a three steps growth process that enables us to grow high quality mirrorlike GaN layers without using AlN buffer layers. During a first step, a thin 3D GaN layer is deposited at high temperature. This layer is smoothed under ammonia flow for several minutes when the growth is interrupted. The subsequent growth of GaN is two dimensional. 600 nm thick GaN films were grown. They were analyzed by high resolution x-ray diffraction, reflectivity, and photoluminescence. All the layers are under strong tensile biaxial strain. The correlation between residual tensile strain in GaN layers and their optical properties is reported for biaxial deformations εxx ranging up to 0.37%. © 2000 American Institute of Physics.
Show PACS
81.05.Ea III-V semiconductors
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
78.55.Cr III-V semiconductors
78.66.Fd III-V semiconductors
81.15.Kk Vapor phase epitaxy; growth from vapor phase
68.60.Bs Mechanical and acoustical properties

Electronic properties of CuGaSe2-based heterojunction solar cells. Part I. Transport analysis

V. Nadenau, U. Rau, A. Jasenek, and H. W. Schock

J. Appl. Phys. 87, 584 (2000); http://dx.doi.org/10.1063/1.371903 (10 pages) | Cited 70 times

Full Text: Read Online (HTML) | Download PDF

Show Abstract
This article presents a systematic study on the electronic transport mechanisms of CuGaSe2-based thin film solar cells. A variety of samples with different types of stoichiometry deviations, substrates and buffer layers is investigated. We propose two transport models, namely tunneling enhanced volume recombination and tunneling enhanced interface recombination, which allow to explain the observed features for all devices under consideration. The doping level of the absorber layer turns out to be the most decisive parameter for the electronic loss mechanism. The doping is influenced by the type of stoichiometry deviation as well as by the Na content of the substrate. High doping levels result in tunnel assisted recombination. The best solar cells display the lowest tunneling rates. For these devices treatments of the absorber surface by air-annealing and/or the deposition temperature of the CdS buffer layer are decisive for the final device performance. We use the investigation of the open-circuit voltage relaxation to verify the assumptions on the dominant loss mechanism in the different devices. © 2000 American Institute of Physics.
Show PACS
84.60.Jt Photoelectric conversion
85.30.De Semiconductor-device characterization, design, and modeling

Electronic properties of CuGaSe2-based heterojunction solar cells. Part II. Defect spectroscopy

A. Jasenek, U. Rau, V. Nadenau, and H. W. Schock

J. Appl. Phys. 87, 594 (2000); http://dx.doi.org/10.1063/1.371904 (9 pages) | Cited 33 times

Full Text: Read Online (HTML) | Download PDF

Show Abstract
CuGaSe2/CdS/ZnO heterostructures with different CuGaSe2 stoichiometry deviations, glass substrates with different Na content and varying CdS buffer deposition procedures are analyzed with admittance spectroscopy, deep level transient spectroscopy, and capacitance–voltage measurements. Cu-rich CuGaSe2 exhibits two acceptor-like bulk traps with activation energies of 240 and 375 meV. The density of both defect states is reduced by air annealing at 200 °C. Ga-rich CuGaSe2 material displays a tail-like energetic distribution of acceptor defects. The maximum of this distribution is at an energy of 250 meV. Defect densities and doping concentrations of Ga-rich material are considerably lower than in Cu-rich material. The different defect and doping densities found in the present investigation fully explain the efficiency gain which has recently been made by changing the material stoichiometry, the glass substrate and the CdS-deposition method for CuGaSe2-based thin film solar cells. © 2000 American Institute of Physics.  
Show PACS
84.60.Jt Photoelectric conversion
71.55.Ht Other nonmetals
Return to All Sections
Close

Google Calendar

ADVERTISEMENT

Go to AIP Home   © AIP Publishing LLC
close